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LaSr2AlO5, a Versatile Host Compound for Ce3+-Based Yellow Phosphors: Structural Tuning of Optical Properties and Use in Solid-State White Lighting

Chemistry of materials, 2009-07, Vol.21 (13), p.2957-2966

2009

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Optical properties of yellow light-emitting diodes grown on semipolar ( 11 2 ¯ 2 ) bulk GaN substrates

Applied physics letters, 2008-06, Vol.92 (22), p.221110-221110-3

2008

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High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2L), p.L126

2007

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A yellow-emitting Ce3+ phosphor, La1−xCexSr2AlO5, for white light-emitting diodes

Applied physics letters, 2008-09, Vol.93 (9)

2008

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Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

Physica status solidi. PSS-RRL. Rapid research letters, 2007-05, Vol.1 (3), p.125-127

2007

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Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

Applied physics letters, 2007-10, Vol.91 (18)

2007

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High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate

Japanese Journal of Applied Physics, 2007-10, Vol.46 (10L), p.L960

2007

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High power and high efficiency green light emitting diode on free-standing semipolar (11$ bar 2 $2) bulk GaN substrate

Physica status solidi. PSS-RRL. Rapid research letters, 2007-07, Vol.1 (4), p.162-164

2007

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Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2009-07, Vol.48 (7R), p.71003

2009

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Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates

Physica status solidi. A, Applications and materials science, 2009-02, Vol.206 (2), p.200-202

2009

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Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures

Applied physics express, 2009-07, Vol.2, p.71002

2009

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High power and high efficiency blue light emitting diode on freestanding semipolar ( 10 1 ¯ 1 ¯ ) bulk GaN substrate

Applied physics letters, 2007-06, Vol.90 (23), p.233504-233504-3

2007

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Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope

Physica status solidi. A, Applications and materials science, 2008-05, Vol.205 (5), p.1203-1206

2008

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La1-x-0.025Ce0.025Sr2+xAl1-xSixO5 solid solutions as tunable yellow phosphors for solid state white lighting

Journal of materials chemistry, 2009-01, Vol.19 (9), p.1325-1330

2009

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Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes

Semiconductor science and technology, 2008-07, Vol.23 (7), p.072001

2008

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Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding

Applied physics letters, 2006-10, Vol.89 (17), p.171116-171116-3

2006

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High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2L), p.L129

2007

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Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

Applied Optics, 2007-08, Vol.46 (23), p.5974

2007

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Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature

Journal of physics. D, Applied physics, 2008-04, Vol.41 (8), p.082001-082001 (5)

2008

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Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates

Physica status solidi. PSS-RRL. Rapid research letters, 2008-03, Vol.2 (2), p.89-91

2008

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High Power and High Efficiency Semipolar InGaN Light Emitting Diodes

Journal of Light & Visual Environment, 2008, Vol.32(2), pp.107-110

2008

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Enhancement of external quantum efficiency in GaN-based light emitting diodes using a suspended geometry

Physica status solidi. C, 2008-05, Vol.5 (6), p.2216-2218

2008

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Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents

Japanese Journal of Applied Physics, 2007-07, Vol.46 (7L), p.L627

2007

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Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix

Journal of Light & Visual Environment, 2008, Vol.32(2), pp.111-114

2008

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Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition

Japanese Journal of Applied Physics, 2008-10, Vol.47 (10R), p.7854

2008

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LaSr2AlO5, a Versatile Host Compound for Ce3+-Based Yellow Phosphors: Structural Tuning of Optical Properties and Use in Solid-State White Lighting

Optical properties of yellow light-emitting diodes grown on semipolar ( 11 2 ¯ 2 ) bulk GaN substrates

High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes

A yellow-emitting Ce3+ phosphor, La1−xCexSr2AlO5, for white light-emitting diodes

Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate

High power and high efficiency green light emitting diode on free-standing semipolar (11$ bar 2 $2) bulk GaN substrate

Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

Highly efficient broad-area blue and white light-emitting diodes on bulk GaN substrates

Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures

High power and high efficiency blue light emitting diode on freestanding semipolar ( 10 1 ¯ 1 ¯ ) bulk GaN substrate

Optical polarization of m -plane In-GaN/GaN light-emitting diodes characterized via confocal microscope

La1-x-0.025Ce0.025Sr2+xAl1-xSixO5 solid solutions as tunable yellow phosphors for solid state white lighting

Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes

Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding

High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates

Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes

Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature

Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates

High Power and High Efficiency Semipolar InGaN Light Emitting Diodes

Enhancement of external quantum efficiency in GaN-based light emitting diodes using a suspended geometry

Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents

Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix

Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition

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