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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.21-26

2012

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Stability Limits of Pressure Densified Polycarbonate Glass

Macromolecules, 2019-06, Vol.52 (11), p.4139-4144

2019

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Transparent nanocrystalline spinel by room temperature high-pressure compaction

Scripta materialia, 2013-08, Vol.69 (4), p.334-337

2013

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Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

Journal of crystal growth, 2018-10, Vol.499, p.35-39

2018

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Seeded growth of GaN single crystals from solution at near atmospheric pressure

Journal of crystal growth, 2008-08, Vol.310 (17), p.3934-3940

2008

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Linear growth rate and sectorial growth dynamics of diamond crystals grown by the temperature-gradient techniques (Fe–Ni–C system)

Geochemistry international, 2016-09, Vol.54 (9), p.781-787

2016

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III-Nitride crystal growth from nitride-salt solution

Journal of crystal growth, 2007-07, Vol.305 (2), p.399-402

2007

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Optical probing of low-pressure solution grown GaN crystal properties

Journal of crystal growth, 2010-09, Vol.312 (18), p.2564-2568

2010

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Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

Journal of crystal growth, 2010-09, Vol.312 (18), p.2558-2563

2010

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Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient

Journal of crystal growth, 2005-07, Vol.281 (1), p.5-10

2005

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GaN single crystals of different habit grown from solution at near atmospheric pressure

Journal of crystal growth, 2010-09, Vol.312 (18), p.2551-2557

2010

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Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature

Journal of crystal growth, 2008-08, Vol.310 (17), p.3941-3945

2008

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Distribution of N+ centers in synthetic diamond single crystals

Inorganic materials, 2009-06, Vol.45 (6), p.616-619

2009

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A new approach to investigation of nickel defect transformation in the HPHT synthetic diamonds using local optical spectroscopy

Diamond and related materials, 2006-11, Vol.15 (11), p.1886-1890

2006

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Spatial distribution of the nitrogen defects in synthetic diamond monocrystals: Data of IR mapping

Geochemistry international, 2009, Vol.47 (1), p.94-98

2009

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Nitrogen incorporation in octahedral diamonds grown in the Fe-Ni-C system

Geochemistry international, 2012-02, Vol.50 (2), p.179-184

2012

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Distribution of H1a-centers in as-grown diamonds of Fe-Ni-C system: FTIR-mapping study

Diamond and related materials, 2016-10, Vol.69, p.8-12

2016

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Growth and characterization of III-N bulk crystals

Journal of materials science. Materials in electronics, 2008-09, Vol.19 (8-9), p.845-848

2008

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Effect of HPHT annealing on the photoluminescence of synthetic diamonds grown in the Fe–Ni–C system

Diamond and related materials, 2003-12, Vol.12 (12), p.2147-2168

2003

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Specifics of the distribution of nitrogen defects in synthetic diamonds of cubic habit: IR mapping data

Geochemistry international, 2010-10, Vol.48 (10), p.1028-1034

2010

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Nitrogen aggregation and linear growth rate in HPHT synthetic diamonds

Diamond and related materials, 2004-10, Vol.13 (10), p.1802-1806

2004

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Reducing the Size of Nanocrystals below the Thermodynamic Size Limit

Crystal growth & design, 2017-04, Vol.17 (4), p.1752-1758

2017

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Distribution of nitrogen-related defects in diamond single crystals grown under nonisothermal conditions

Inorganic materials, 2006-09, Vol.42 (9), p.971-975

2006

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Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

ECS journal of solid state science and technology, 2016, Vol.5 (6), p.Q176-Q178

2016

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Stability Limits of Pressure Densified Polycarbonate Glass

Transparent nanocrystalline spinel by room temperature high-pressure compaction

Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

Seeded growth of GaN single crystals from solution at near atmospheric pressure

Linear growth rate and sectorial growth dynamics of diamond crystals grown by the temperature-gradient techniques (Fe–Ni–C system)

III-Nitride crystal growth from nitride-salt solution

Optical probing of low-pressure solution grown GaN crystal properties

Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient

GaN single crystals of different habit grown from solution at near atmospheric pressure

Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature

Distribution of N+ centers in synthetic diamond single crystals

A new approach to investigation of nickel defect transformation in the HPHT synthetic diamonds using local optical spectroscopy

Spatial distribution of the nitrogen defects in synthetic diamond monocrystals: Data of IR mapping

Nitrogen incorporation in octahedral diamonds grown in the Fe-Ni-C system

Distribution of H1a-centers in as-grown diamonds of Fe-Ni-C system: FTIR-mapping study

Growth and characterization of III-N bulk crystals

Effect of HPHT annealing on the photoluminescence of synthetic diamonds grown in the Fe–Ni–C system

Specifics of the distribution of nitrogen defects in synthetic diamonds of cubic habit: IR mapping data

Nitrogen aggregation and linear growth rate in HPHT synthetic diamonds

Reducing the Size of Nanocrystals below the Thermodynamic Size Limit

Distribution of nitrogen-related defects in diamond single crystals grown under nonisothermal conditions

Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension

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