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Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates

Journal of crystal growth, 2001-09, Vol.230 (3), p.497-502

2001

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Impact of defects on the carrier transport in GaN

Journal of crystal growth, 1998-06, Vol.189-190, p.763-767

1998

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Internal photoluminescence in ZnSe homoepitaxy and application in blue–green–orange mixed-color light-emitting diodes

Journal of crystal growth, 2000-06, Vol.214, p.1075-1079

2000

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InGaN on SiC LEDs for High Flux and High Current Applications

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.399-402

2002

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Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy

Journal of crystal growth, 1999-05, Vol.201, p.433-436

1999

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Influence of driving conditions on the stability of ZnSe-based cw-laser diodes

Journal of crystal growth, 2000-06, Vol.214, p.1040-1044

2000

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Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy

physica status solidi (b), 1999-11, Vol.216 (1), p.659-662

1999

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Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

Electronics letters, 1998-04, Vol.34 (9), p.891

1998

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Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates

Journal of applied physics, 1997-11, Vol.82 (9), p.4690-4692

1997

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Low threshold II–VI laser diodes with transversal and longitudinal single-mode emission

Journal of crystal growth, 2000-06, Vol.214, p.1045-1048

2000

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Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue–green spectral region

Applied physics letters, 1998-06, Vol.72 (25), p.3320-3322

1998

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Plasma assisted molecular beam epitaxy growth of GaN

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.12-15

1997

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Green emitting DFB laser diodes based on ZnSe

Electronics letters, 1999-04, Vol.35 (9), p.718-720

1999

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Electroabsorption studies on quasi-three-dimensional and quasi-two-dimensional excitons in (Zn,Cd)Se/Zn(S,Se) structures

Journal of applied physics, 1999-10, Vol.86 (8), p.4360-4364

1999

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Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue—green laser diodes

Journal of crystal growth, 1998, Vol.184, p.580-584

1998

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Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC

Journal of crystal growth, 2001-09, Vol.230 (3), p.507-511

2001

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Optical Spectroscopy of Mg- and C-Related Donor and Acceptor Levels in GaN Grown by MBE

physica status solidi (b), 1999-11, Vol.216 (1), p.557-560

1999

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.15-20

2000

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Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials

Journal of crystal growth, 1998-02, Vol.184, p.440-444

1998

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Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

Journal of crystal growth, 1999-05, Vol.201, p.933-937

1999

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High-Power Operation of ZnSe-Based cw-Laser Diodes

Physica status solidi. A, Applied research, 2000-07, Vol.180 (1), p.21-26

2000

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Hole trap generation by thermal treatment of nitrogen doped p-type ZnSe on GaAs characterized by deep level transient spectroscopy

Applied physics letters, 1997-10, Vol.71 (15), p.2187-2189

1997

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ZnSe-Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates

physica status solidi (b), 1997-08, Vol.202 (2), p.683-693

1997

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Comparison of Long-Time Delay in Lasing in Homo- and Heteroepitaxially Grown II-VI Laser Diodes

Acta physica Polonica, A, 1998-08, Vol.94 (2), p.355-358

1998

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Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN

Materials science forum, 1998-01, Vol.264-268, p.1193-1196

1998

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Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates

Impact of defects on the carrier transport in GaN

Internal photoluminescence in ZnSe homoepitaxy and application in blue–green–orange mixed-color light-emitting diodes

InGaN on SiC LEDs for High Flux and High Current Applications

Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy

Influence of driving conditions on the stability of ZnSe-based cw-laser diodes

Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy

Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates

Low threshold II–VI laser diodes with transversal and longitudinal single-mode emission

Quantum confined Stark effect of II-VI heterostructures suitable as modulators in the blue–green spectral region

Plasma assisted molecular beam epitaxy growth of GaN

Green emitting DFB laser diodes based on ZnSe

Electroabsorption studies on quasi-three-dimensional and quasi-two-dimensional excitons in (Zn,Cd)Se/Zn(S,Se) structures

Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue—green laser diodes

Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC

Optical Spectroscopy of Mg- and C-Related Donor and Acceptor Levels in GaN Grown by MBE

High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials

Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

High-Power Operation of ZnSe-Based cw-Laser Diodes

Hole trap generation by thermal treatment of nitrogen doped p-type ZnSe on GaAs characterized by deep level transient spectroscopy

ZnSe-Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates

Comparison of Long-Time Delay in Lasing in Homo- and Heteroepitaxially Grown II-VI Laser Diodes

Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN

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