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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Nano letters, 2017-02, Vol.17 (2), p.1049-1055

2017

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Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

Scientific reports, 2018-01, Vol.8 (1), p.501-501, Article 501

2018

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Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate

ACS nano, 2018-03, Vol.12 (3), p.2373-2380

2018

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Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors

Optics express, 2019-04, Vol.27 (7), p.9495-9501

2019

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Internal quantum efficiency and carrier dynamics in semipolar (20 21 ) InGaN/GaN light-emitting diodes

Optics express, 2017-02, Vol.25 (3), p.2178-2186

2017

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Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy

Nanotechnology, 2017-01, Vol.28 (2), p.025202-025202

2017

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GaN nanowire tips for nanoscale atomic force microscopy

Nanotechnology, 2017-05, Vol.28 (20), p.20LT01

2017

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Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

MRS bulletin, 2009-05, Vol.34 (5), p.318-323

2009

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Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers

Physica status solidi. A, Applications and materials science, 2017-05, Vol.214 (5), p.n/a

2017

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Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices

Journal of electronic materials, 2015-05, Vol.44 (5), p.1255-1262

2015

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Semipolar (}\bar}}\bar}}) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Journal of display technology, , Vol.9 (4), p.190-198

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IEEE_Xplore

Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires

Optics express, 2014-12, Vol.22 (24), p.29445-29455

2014

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Group III-nitride lasers: a materials perspective

Materials today (Kidlington, England), 2011-09, Vol.14 (9), p.408-415

2011

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High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

IEEE photonics technology letters, 2020-04, Vol.32 (7), p.383-386

2020

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IEEE_Xplore

Advanced Scanning Probe Nanolithography Using GaN Nanowires

Nano letters, 2021-07, Vol.21 (13), p.5493-5499

2021

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Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

Applied physics letters, 2013-08, Vol.103 (8)

2013

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Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

Journal of physical chemistry. C, 2021-02, Vol.125 (4), p.2626-2635

2021

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444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

Applied physics letters, 2012-01, Vol.100 (2)

2012

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Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells

Applied physics letters, 2011-12, Vol.99 (24)

2011

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Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

IEEE photonics technology letters, 2014-01, Vol.26 (1), p.43-46

2014

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IEEE_Xplore

Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

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Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes

Japanese Journal of Applied Physics, 2007-08, Vol.46 (8L), p.L761

2007

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Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar ( 10 1 ¯ 1 ) core-shell triangular nanostripe GaN/InGaN LEDs

Nanotechnology, 2018-06, Vol.29 (23), p.235206

2018

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Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021, p.268-272

2021

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InGaN/GaN laser diodes on semipolar (10$bar 1$$bar 1$) bulk GaN substrates

Physica status solidi. C, 2008-05, Vol.5 (6), p.2108-2110

2008

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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate

Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors

Internal quantum efficiency and carrier dynamics in semipolar (20 21 ) InGaN/GaN light-emitting diodes

Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy

GaN nanowire tips for nanoscale atomic force microscopy

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes

Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers

Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices

Semipolar (}\bar}}\bar}}) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires

Group III-nitride lasers: a materials perspective

High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

Advanced Scanning Probe Nanolithography Using GaN Nanowires

Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells

Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes

Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes

Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar ( 10 1 ¯ 1 ) core-shell triangular nanostripe GaN/InGaN LEDs

Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices

InGaN/GaN laser diodes on semipolar (10$bar 1$$bar 1$) bulk GaN substrates

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