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Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance

Diamond and related materials, 2017-06, Vol.76, p.79-85

2017

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Nanopatterning with UV Optical Lithography

MRS bulletin, 2005-12, Vol.30 (12), p.942-946

2005

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Review of technology for 157-nm lithography

IBM journal of research and development, 2001-09, Vol.45 (5), p.605-614

2001

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A simple micromachining approach to testing nanoscale metal–self-assembled monolayer–metal junctions

Nanotechnology, 2004-01, Vol.15 (1), p.86-91

2004

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Chemical and semiconducting properties of NO2-activated H-terminated diamond

Diamond and related materials, 2018-04, Vol.84, p.86-94

2018

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Resists and Other Critical Issues in 157-nm Lithography

Journal of Photopolymer Science and Technology, 2000, Vol.13(3), pp.369-372

2000

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DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing

Microelectronic engineering, 1998-03, Vol.41, p.237-240

1998

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Fluorine—an enabler in advanced photolithography

Journal of fluorine chemistry, 2003-07, Vol.122 (1), p.3-10

2003

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Nanocomposite approaches toward pellicles for 157-nm lithography

Journal of micro/nanolithography, MEMS, and MOEMS, 2005-01, Vol.4 (1), p.13004

Liberman, V.

2005

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Encapsulation of Nanosized Silica by in Situ Polymerization of tert-Butyl Acrylate Monomer

Langmuir, 2000-11, Vol.16 (23), p.9031-9034

2000

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Chemical and semiconducting properties of NO^sub 2^-activated H-terminated diamond

Diamond and related materials, 2018-04, Vol.84, p.86

2018

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157 nm: Deepest deep-ultraviolet yet

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-11, Vol.17 (6), p.3262-3266

1999

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Effect of acid diffusion on performance in positive deep ultraviolet resists

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1994-11, Vol.12 (6), p.3888-3894

1994

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Relationship between resist performance and reaction order in a chemically amplified resist system

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-11, Vol.11 (6), p.2798-2806

1993

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Correlation of UVIIHS resist chemistry to dissolution rate measurements

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1996-11, Vol.14 (6), p.4267-4271

1996

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The effect of diffusion, reaction order, and developer selectivity on the performance of positive DUV resists

Microelectronic engineering, 1994, Vol.23 (1), p.315-320

1994

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Mask Dependent Etch Rates III: The Effect of a Silver Etch Mask on the Plasma Etch Rate of Silicon

Journal of the Electrochemical Society, 1988-01, Vol.135 (1), p.268-269

1988

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Nanopatterning with UV optical lithography: Fabrication of Sub-45-nm structures for the next generation of devices

MRS bulletin, 2005, Vol.30 (12), p.942-946

2005

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The Effect of Metal Masks on the Plasma Etch Rate of Silicon

Journal of the Electrochemical Society, 1989-06, Vol.136 (6), p.1799-1804

1989

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Hybrid optical maskless lithography: Scaling beyond the 45 nm node

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-11, Vol.23 (6), p.2743-2748

2005

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Sub-0.5 micron lithography with i-line acid-hardened negative resists

Microelectronic engineering, 1992-03, Vol.17 (1), p.283-286

1992

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Optimizing the resist to the aerial image in a chemically amplified system

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1997-11, Vol.15 (6), p.2587-2595

1997

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The effect of aluminum masks on the plasma etch rates of polysilicon and silicon nitride

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-01, Vol.8 (1), p.5-9

1990

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Fluoroaromatic Resists for 157-nm Lithography

Journal of Photopolymer Science and Technology, 2002, Vol.15(4), pp.655-666

2002

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Immersion patterning down to 27 nm half pitch

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-11, Vol.24 (6), p.2789-2797

2006

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Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance

Nanopatterning with UV Optical Lithography

Review of technology for 157-nm lithography

A simple micromachining approach to testing nanoscale metal–self-assembled monolayer–metal junctions

Chemical and semiconducting properties of NO2-activated H-terminated diamond

Resists and Other Critical Issues in 157-nm Lithography

DUV resist UV II HS applied to high resolution electron beam lithography and to masked ion beam proximity and reduction printing

Fluorine—an enabler in advanced photolithography

Nanocomposite approaches toward pellicles for 157-nm lithography

Encapsulation of Nanosized Silica by in Situ Polymerization of tert-Butyl Acrylate Monomer

Chemical and semiconducting properties of NO^sub 2^-activated H-terminated diamond

157 nm: Deepest deep-ultraviolet yet

Effect of acid diffusion on performance in positive deep ultraviolet resists

Relationship between resist performance and reaction order in a chemically amplified resist system

Correlation of UVIIHS resist chemistry to dissolution rate measurements

The effect of diffusion, reaction order, and developer selectivity on the performance of positive DUV resists

Mask Dependent Etch Rates III: The Effect of a Silver Etch Mask on the Plasma Etch Rate of Silicon

Nanopatterning with UV optical lithography: Fabrication of Sub-45-nm structures for the next generation of devices

The Effect of Metal Masks on the Plasma Etch Rate of Silicon

Hybrid optical maskless lithography: Scaling beyond the 45 nm node

Sub-0.5 micron lithography with i-line acid-hardened negative resists

Optimizing the resist to the aerial image in a chemically amplified system

The effect of aluminum masks on the plasma etch rates of polysilicon and silicon nitride

Fluoroaromatic Resists for 157-nm Lithography

Immersion patterning down to 27 nm half pitch

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