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Interface traps and dangling-bond defects in (100)Ge∕HfO2

Applied physics letters, 2005-07, Vol.87 (3)

2005

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Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

Journal of applied physics, 2015-10, Vol.118 (16)

2015

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Impact of nitrogen incorporation on interface states in (100)Si∕HfO2

Journal of applied physics, 2005-12, Vol.98 (12)

2005

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Electronic structure of the interface of aluminum nitride with Si(100)

Journal of applied physics, 2008-11, Vol.104 (9), p.093713-093713-4

2008

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Impact of Al incorporation in hafnia on interface states in (100)Si/HfAlxOy

Microelectronic engineering, 2005-06, Vol.80, p.66-69

2005

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Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2

Microelectronics and reliability, 2005-05, Vol.45 (5-6), p.823-826

2005

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Energy distribution of the (100)Si/HfO2 interface states

Applied physics letters, 2004-06, Vol.84 (23), p.4771-4773

2004

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Effect of interlayer composition on passivation of (100)Si/HfO2 interface states by hydrogen

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1-3), p.197-200

2005

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Electron states at the (100)Ge/HfO2 Interface

Materials science in semiconductor processing, 2004, Vol.7 (4-6), p.191-196

2004

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Interface state energy distribution in (100)Si/HfO2

Materials science in semiconductor processing, 2004, Vol.7 (4-6), p.185-189

2004

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Magnetoresistance effect in thin films of Eu1−xSmxO on silicon

Thin solid films, 2001-12, Vol.400 (1-2), p.116-119

2001

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Electronic Properties of CdTe/CdS Solar Cells as Influenced by a Buffer Layer

MRS Advances, 2016-01, Vol.1 (14), p.937-942

2016

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Interface traps and dangling-bond defects in ( 100 ) Ge ∕ Hf O 2

Applied physics letters, 2005-07, Vol.87 (3), p.032107-032107-3

2005

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Impact of nitrogen incorporation on interface states in ( 100 ) Si ∕ Hf O 2

Journal of applied physics, 2005-12, Vol.98 (12), p.123703-123703-9

2005

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Effect of interlayer composition on passivation of (1 0 0)Si/HfO 2 interface states by hydrogen

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1), p.197-200

2005

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Study of the dynamical characteristics of an insulator-semiconductor interface

Semiconductors (Woodbury, N.Y.), 1998-11, Vol.32 (11), p.1190-1195

1998

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Impact of nitrogen incorporation on interface states in (1 0 0)Si/HfO 2

Microelectronics and reliability, 2005-05, Vol.45 (5), p.802-805

2005

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Magnetoresistance effect in thin films of Eu sub(1-x)Sm sub(x)O on silicon

Thin solid films, 2001-12, Vol.400 (1-2), p.116-119

2001

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Impact of A1 incorporation in hafnia on interface states in (100)Si/HfAlxOy

Microelectronic engineering, 2005, Vol.80, p.66-69

2005

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Impact of nitrogen incorporation on interface states in (100)Si/HfO2

Microelectronics and reliability, 2005-05, Vol.45 (5-6), p.802-805

2005

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Magnetoresistance effect in thin films of Eu1-xSmxO on silicon

Thin solid films, 2001, Vol.400 (1-2), p.116-119

2001

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Temperature dependence of a magnetoresistance effect in the films of ferromagnetic semiconductors based on oxides of rare-earth elements

Semiconductors (Woodbury, N.Y.), 2001-03, Vol.35 (3), p.295-297

2001

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Current transfer processes in thin lutecium and terbium oxide films on silicon

Technical physics letters, 2000-01, Vol.26 (10), p.916-918

2000

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Entropy of activation as a possible structure-sensitive parameter in the dehydroxylation of kaolinite

Reactivity of solids, 1989-06, Vol.7 (2), p.173-181

1989

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Effect of radiation on the characteristics of MIS structures containing rare-earth oxides

Semiconductors (Woodbury, N.Y.), 1997-07, Vol.31 (7), p.752-755

1997

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Interface traps and dangling-bond defects in (100)Ge∕HfO2

Modification of electron states in CdTe absorber due to a buffer layer in CdTe/CdS solar cells

Impact of nitrogen incorporation on interface states in (100)Si∕HfO2

Electronic structure of the interface of aluminum nitride with Si(100)

Impact of Al incorporation in hafnia on interface states in (100)Si/HfAlxOy

Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2

Energy distribution of the (100)Si/HfO2 interface states

Effect of interlayer composition on passivation of (100)Si/HfO2 interface states by hydrogen

Electron states at the (100)Ge/HfO2 Interface

Interface state energy distribution in (100)Si/HfO2

Magnetoresistance effect in thin films of Eu1−xSmxO on silicon

Electronic Properties of CdTe/CdS Solar Cells as Influenced by a Buffer Layer

Interface traps and dangling-bond defects in ( 100 ) Ge ∕ Hf O 2

Impact of nitrogen incorporation on interface states in ( 100 ) Si ∕ Hf O 2

Effect of interlayer composition on passivation of (1 0 0)Si/HfO 2 interface states by hydrogen

Study of the dynamical characteristics of an insulator-semiconductor interface

Impact of nitrogen incorporation on interface states in (1 0 0)Si/HfO 2

Magnetoresistance effect in thin films of Eu sub(1-x)Sm sub(x)O on silicon

Impact of A1 incorporation in hafnia on interface states in (100)Si/HfAlxOy

Impact of nitrogen incorporation on interface states in (100)Si/HfO2

Magnetoresistance effect in thin films of Eu1-xSmxO on silicon

Temperature dependence of a magnetoresistance effect in the films of ferromagnetic semiconductors based on oxides of rare-earth elements

Current transfer processes in thin lutecium and terbium oxide films on silicon

Entropy of activation as a possible structure-sensitive parameter in the dehydroxylation of kaolinite

Effect of radiation on the characteristics of MIS structures containing rare-earth oxides

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