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Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

Applied physics letters, 2000-06, Vol.76 (26), p.3923-3925

2000

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Journal of crystal growth, 2001-02, Vol.222 (4), p.701-705

2001

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First AlGaN/GaN MOSFET with photoanodic gate dielectric

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.107-111

2002

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High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

Journal of applied physics, 1999-03, Vol.85 (5), p.3006-3008

1999

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Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Applied physics letters, 1999-10, Vol.75 (15), p.2280-2282

1999

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Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

Journal of crystal growth, 2001-09, Vol.230 (3), p.564-568

2001

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Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Journal of crystal growth, 2002-06, Vol.241 (4), p.535-542

2002

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Electrical properties of photoanodically generated thin oxide films on n-GaN

Journal of crystal growth, 2001-09, Vol.230 (3), p.602-606

2001

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Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.271-273

2004

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HRTEM study of AlxGa1-xN/AlN DBR mirrors

Diamond and related materials, 2003-03, Vol.12 (3-7), p.1178-1181

2003

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.715-716

2001

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Electron Beam Pumped Nitride Vertical Cavity Surface Emitting Structures with AlGaN/AlN DBR Mirrors

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.428-432

2002

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Journalists’ hostility toward public relations: an historical analysis

Public relations review, 2003-06, Vol.29 (2), p.99-124

2003

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Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.255-258

2001

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Influence of Process Technology on DC-Performance of GaN-Based HFETs

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.452-455

2002

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Filtering Study of Threading Dislocations in AlN Buffered MBE GaN/Sapphire Using Single and Multiple High Temperature AlN Intermediate Layers

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.424-429

2002

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Improved quality of plasma assisted MBE-grown GaN/AlGaN quantum wells revealed by two-wavelength excited photoluminescence

Physica status solidi. C, 2003-12 (7), p.2658-2661

2003

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High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Journal of crystal growth, 2000-06, Vol.216 (1-4), p.15-20

2000

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Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

Journal of crystal growth, 2000-03, Vol.210 (1), p.273-277

2000

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High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA-MBE

Physica status solidi. C, 2003 (1), p.258-262

2003

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Studies Show People Still Willing to Help a Stranger, but Especially a Woman

Psychological reports, 1984-04, Vol.54 (2), p.365-366

Fedler, Fred

1984

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Paparazzi and picture chasers share similar philosophies and reputations, not tactics

Ecquid novi, 2006-01, Vol.27 (1), p.29-48

2006

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Network Commercials Promote Legal Drugs: Outnumber Anti-Drug PSA's 45-to-1

Journal of drug education, 1994-01, Vol.24 (4), p.291-302

Fedler, Fred

1994

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HRTEM study of Al xGa 1− xN/AlN DBR mirrors

Diamond and related materials, 2003, Vol.12 (3), p.1178-1181

2003

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Investigation of Ni/Au contacts on p-GaN annealed in different atmosphers

Journal of crystal growth, 2001-09, Vol.230 (3-4), p.564-568

2001

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Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

First AlGaN/GaN MOSFET with photoanodic gate dielectric

High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Electrical properties of photoanodically generated thin oxide films on n-GaN

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well

HRTEM study of AlxGa1-xN/AlN DBR mirrors

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electron Beam Pumped Nitride Vertical Cavity Surface Emitting Structures with AlGaN/AlN DBR Mirrors

Journalists’ hostility toward public relations: an historical analysis

Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

Influence of Process Technology on DC-Performance of GaN-Based HFETs

Filtering Study of Threading Dislocations in AlN Buffered MBE GaN/Sapphire Using Single and Multiple High Temperature AlN Intermediate Layers

Improved quality of plasma assisted MBE-grown GaN/AlGaN quantum wells revealed by two-wavelength excited photoluminescence

High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

High Reflectivity AlGaN/AlN DBR Mirrors Grown by PA-MBE

Studies Show People Still Willing to Help a Stranger, but Especially a Woman

Paparazzi and picture chasers share similar philosophies and reputations, not tactics

Network Commercials Promote Legal Drugs: Outnumber Anti-Drug PSA's 45-to-1

HRTEM study of Al xGa 1− xN/AlN DBR mirrors

Investigation of Ni/Au contacts on p-GaN annealed in different atmosphers

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