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Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

1, 2022

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Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1228-1234

2021

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Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor

Nanotechnology, 2007-11, Vol.18 (44), p.445203-445203 (5)

2007

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Effect of Read-Out Interconnects on the Polarization Characteristics of Nanoantennas for the Long-Wave Infrared Regime

IEEE transactions on nanotechnology, 2013-03, Vol.12 (2), p.270-275

2013

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Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

IEEE electron device letters, 2013-06, Vol.34 (6), p.741-743

2013

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Enhancement-Mode Pseudomorphic [Formula Omitted]-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE electron device letters, 2010-11, Vol.31 (11), p.1214

2010

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Enhancement-Mode Pseudomorphic hbox In 0.22 hbox Ga 0.78 hbox As -Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE electron device letters, 2010-11, Vol.31 (11), p.1214-1216

2010

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Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.187-202

1, 2022

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An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.1-28

1, 2022

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Fundamentals of 2-D Materials

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.227-252

1, 2022

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High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.29-57

1, 2022

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Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.129-154

1, 2022

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Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.203-226

1, 2022

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Characterization of Silicon FinFETs under Nanoscale Dimensions

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.115-128

1, 2022

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Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.87-113

1, 2022

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Ultra Low Power III-V Tunnel Field-Effect Transistors

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.59-86

1, 2022

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Switching Performance Analysis of III-V FinFETs

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.155-186

1, 2022

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Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.253-288

1, 2022

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Enhancement-Mode Pseudomorphic \hbox \hbox\hbox-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE electron device letters, 2010-11, Vol.31 (11), p.1214-1216

2010

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Enhancement-Mode Pseudomorphic In0.22Ga0.78As-Channel MOSFETs With Ultrathin InAIP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE electron device letters, 2010, Vol.31 (11), p.1214-1216

2010

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Chemical mechanical planarization of gold

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-03, Vol.32 (2)

2014

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High aspect ratio features in poly(methylglutarimide) using electron beam lithography and solvent developers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

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Radio frequency operation of clocked quantum-dot cellular automata latch

Applied physics letters, 2009-11, Vol.95 (19), p.193109-193109-3

2009

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Gate-Recessed Integrated E/D GaN HEMT Technology With [Formula Omitted]

IEEE electron device letters, 2013-06, Vol.34 (6), p.741

2013

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Gate-Recessed Integrated E/D GaN HEMT Technology With syntax error at token

IEEE electron device letters, 2013-06, Vol.34 (6), p.741-743

2013

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Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor

Effect of Read-Out Interconnects on the Polarization Characteristics of Nanoantennas for the Long-Wave Infrared Regime

Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

Enhancement-Mode Pseudomorphic [Formula Omitted]-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

Enhancement-Mode Pseudomorphic hbox In 0.22 hbox Ga 0.78 hbox As -Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling

An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective

Fundamentals of 2-D Materials

High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications

Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications

Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors

Characterization of Silicon FinFETs under Nanoscale Dimensions

Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors

Ultra Low Power III-V Tunnel Field-Effect Transistors

Switching Performance Analysis of III-V FinFETs

Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications

Enhancement-Mode Pseudomorphic \hbox \hbox\hbox-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

Enhancement-Mode Pseudomorphic In0.22Ga0.78As-Channel MOSFETs With Ultrathin InAIP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

Chemical mechanical planarization of gold

High aspect ratio features in poly(methylglutarimide) using electron beam lithography and solvent developers

Radio frequency operation of clocked quantum-dot cellular automata latch

Gate-Recessed Integrated E/D GaN HEMT Technology With [Formula Omitted]

Gate-Recessed Integrated E/D GaN HEMT Technology With syntax error at token

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