UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

1, 2021

Volltextzugriff (PDF)

Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1228-1234

2021

Volltextzugriff (PDF)

Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor

Nanotechnology, 2007-11, Vol.18 (44), p.445203-445203 (5)

2007

Volltextzugriff (PDF)

Effect of Read-Out Interconnects on the Polarization Characteristics of Nanoantennas for the Long-Wave Infrared Regime

IEEE transactions on nanotechnology, 2013-03, Vol.12 (2), p.270-275

2013

Volltextzugriff (PDF)

Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

IEEE electron device letters, 2013-06, Vol.34 (6), p.741-743

2013

Volltextzugriff (PDF)

Enhancement-Mode Pseudomorphic hbox In 0.22 hbox Ga 0.78 hbox As -Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE electron device letters, 2010-11, Vol.31 (11), p.1214-1216

2010

Volltextzugriff (PDF)

Enhancement-Mode Pseudomorphic [Formula Omitted]-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE electron device letters, 2010-11, Vol.31 (11), p.1214

2010

Volltextzugriff (PDF)

Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.187-202

1, 2022

Volltextzugriff (PDF)

An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.1-28

1, 2022

Volltextzugriff (PDF)

Switching Performance Analysis of III-V FinFETs

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.155-186

1, 2022

Volltextzugriff (PDF)

Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.87-113

1, 2022

Volltextzugriff (PDF)

Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.203-226

1, 2022

Volltextzugriff (PDF)

Ultra Low Power III-V Tunnel Field-Effect Transistors

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.59-86

1, 2022

Volltextzugriff (PDF)

Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.129-154

1, 2022

Volltextzugriff (PDF)

Characterization of Silicon FinFETs under Nanoscale Dimensions

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.115-128

1, 2022

Volltextzugriff (PDF)

High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.29-57

1, 2022

Volltextzugriff (PDF)

Fundamentals of 2-D Materials

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.227-252

1, 2022

Volltextzugriff (PDF)

Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 2022, p.253-288

1, 2022

Volltextzugriff (PDF)

Enhancement-Mode Pseudomorphic \hbox \hbox\hbox-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE electron device letters, 2010-11, Vol.31 (11), p.1214-1216

2010

Volltextzugriff (PDF)

Enhancement-Mode Pseudomorphic In0.22Ga0.78As-Channel MOSFETs With Ultrathin InAIP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

IEEE electron device letters, 2010, Vol.31 (11), p.1214-1216

2010

Volltextzugriff (PDF)

Chemical mechanical planarization of gold

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2014-03, Vol.32 (2)

2014

Volltextzugriff (PDF)

High aspect ratio features in poly(methylglutarimide) using electron beam lithography and solvent developers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

Volltextzugriff (PDF)

Radio frequency operation of clocked quantum-dot cellular automata latch

Applied physics letters, 2009-11, Vol.95 (19), p.193109-193109-3

2009

Volltextzugriff (PDF)

Gate-Recessed Integrated E/D GaN HEMT Technology With syntax error at token

IEEE electron device letters, 2013-06, Vol.34 (6), p.741-743

2013

Volltextzugriff (PDF)

Gate-Recessed Integrated E/D GaN HEMT Technology With [Formula Omitted]

IEEE electron device letters, 2013-06, Vol.34 (6), p.741

2013

Volltextzugriff (PDF)

1 – 25 von 170

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(131)
Mit Volltextzugriff
(134)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Englisch
(170)

Erscheinungsjahr

n.n

Thema

Science & Technology
(109)
Life Sciences & Biomedicine
(67)
Humans
(52)
Female
(37)
Male
(30)
Technology
(26)
Adult
(24)
Physical Sciences
(23)
Engineering
(21)
Engineering, Electrical & Electronic
(19)
Physics
(19)
Middle Aged
(18)
Physics, Applied
(15)
Adolescent
(14)
Science & Technology - Other Topics
(14)
Young Adult
(14)
Infant, Newborn
(12)
Child
(11)
Exact Sciences And Technology
(11)
Patients
(11)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Ingenta
(77)
MEDLINE
(59)
EZB Electronic Journals Library
(42)
Journals@Ovid
(42)
Single Journals
(41)
IEEE Xplore
(31)
IngentaConnect Journals
(28)
Access via ScienceDirect (Elsevier)
(21)
Ebook Central Perpetual and DDA
(16)
eBooks on EBSCOhost
(16)
Taylor & Francis eBooks A-Z
(14)
Nature
(12)
Wiley-Blackwell Journals
(11)
JSTOR
(10)
Nexis Uni
(10)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(9)
Wiley Online Library
(8)
American Institute of Physics (AIP) Journals
(8)
Oxford Journals
(7)
Taylor & Francis
(7)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

Operation of single-walled carbon nanotube as a radio-frequency single-electron transistor

Effect of Read-Out Interconnects on the Polarization Characteristics of Nanoantennas for the Long-Wave Infrared Regime

Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz

Enhancement-Mode Pseudomorphic hbox In 0.22 hbox Ga 0.78 hbox As -Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

Enhancement-Mode Pseudomorphic [Formula Omitted]-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling

An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective

Switching Performance Analysis of III-V FinFETs

Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors

Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors

Ultra Low Power III-V Tunnel Field-Effect Transistors

Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications

Characterization of Silicon FinFETs under Nanoscale Dimensions

High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications

Fundamentals of 2-D Materials

Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications

Enhancement-Mode Pseudomorphic \hbox \hbox\hbox-Channel MOSFETs With Ultrathin InAlP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

Enhancement-Mode Pseudomorphic In0.22Ga0.78As-Channel MOSFETs With Ultrathin InAIP Native Oxide Gate Dielectric and a Cutoff Frequency of 60 GHz

Chemical mechanical planarization of gold

High aspect ratio features in poly(methylglutarimide) using electron beam lithography and solvent developers

Radio frequency operation of clocked quantum-dot cellular automata latch

Gate-Recessed Integrated E/D GaN HEMT Technology With syntax error at token

Gate-Recessed Integrated E/D GaN HEMT Technology With [Formula Omitted]

Suchergebnisse filtern