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Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

1, 2021

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Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

Applied physics letters, 2018-06, Vol.112 (26)

2018

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Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1228-1234

2021

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Tunable and reconfigurable bandstop filters enabled by optically controlled switching elements

Electronics letters, 2022-12, Vol.58 (25), p.985-987

2022

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Changes in the Editorial Board

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2841-2843

Fay, Patrick

2024

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IEEE_Xplore

Thank You to Our Reviewers and Editors

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6101-6102

Fay, Patrick

2023

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IEEE_Xplore

Changes in the Editorial Board

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4504-4508

Fay, Patrick

2023

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IEEE_Xplore

Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures

Physical review letters, 2009-07, Vol.103 (2), p.026801-026801, Article 026801

2009

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High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

Applied physics letters, 2015-12, Vol.107 (23)

2015

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New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Physical review. X, 2017-10, Vol.7 (4), p.041017, Article 041017

2017

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Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Materials, 2019-08, Vol.12 (15), p.2455

2019

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High-Frequency GaN Electronic Devices

1st ed. 2020., 2019

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A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

IEEE journal of microwaves, 2024-01, Vol.4 (1), p.158-166

2024

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1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

e-Prime, 2023-12, Vol.6 (C), p.100330, Article 100330

2023

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Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

Applied physics letters, 2015-10, Vol.107 (16)

2015

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Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching

Physica Status Solidi B. Basic Solid State Physics, 2017-08, Vol.254 (8), p.n/a

2017

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Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Physical review applied, 2019-03, Vol.11 (3), Article 034032

2019

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Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Journal of applied physics, 2017-05, Vol.121 (18)

2017

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Guest Editorial Special Section on the 2020 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH)

IEEE transactions on semiconductor manufacturing, 2020-11, Vol.33 (4), p.532-533

Fay, Patrick

2020

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IEEE_Xplore

Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1511-1516

2011

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Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS

IEEE journal on exploratory solid-state computational devices and circuits, 2021-12, Vol.7 (2), p.184-192

2021

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Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

IEEE journal on exploratory solid-state computational devices and circuits, 2015-12, Vol.1, p.28-34

2015

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Guest Editorial Special Section on the 2019 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH)

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.465-465

Fay, Patrick

2019

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IEEE_Xplore

Molybdenum Carbamate Nanosheets as a New Class of Potential Phase Change Materials

Nano letters, 2017-06, Vol.17 (6), p.3902-3906

2017

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Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise

IEEE journal on exploratory solid-state computational devices and circuits, 2016-12, Vol.2, p.20-27

2016

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Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN

Tunable and reconfigurable bandstop filters enabled by optically controlled switching elements

Changes in the Editorial Board

Thank You to Our Reviewers and Editors

Changes in the Editorial Board

Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

High-Frequency GaN Electronic Devices

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

1.7-kV vertical GaN p-n diode with triple-zone graded junction termination extension formed by ion-implantation

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching

Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

Guest Editorial Special Section on the 2020 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH)

Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

Characterization and Modeling of 22 nm FDSOI Cryogenic RF CMOS

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Guest Editorial Special Section on the 2019 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH)

Molybdenum Carbamate Nanosheets as a New Class of Potential Phase Change Materials

Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise

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