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High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

Optics express, 2018-04, Vol.26 (8), p.10305-10314

2018

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Mid-Infrared InAs Photodetector Grown on GaAs Substrate Through Cation Exchange

IEEE photonics technology letters, 2017-03, Vol.29 (5), p.458-461

2017

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Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.353-360

2017

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Dry Etched Waveguide Laser Diode on GeOI

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.264-269

2015

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Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth

Optics express, 2017-07, Vol.25 (14), p.15818-15827

2017

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Direct bandgap photoluminescence from n-type indirect GaInP alloys

Photonics research (Washington, DC), 2017-06, Vol.5 (3), p.239-244

2017

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Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

Applied physics letters, 2014-06, Vol.104 (23)

2014

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High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.122-125

2020

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Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique

Optics express, 2015-07, Vol.23 (14), p.18611-18619

2015

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Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range

Optics express, 2017-08, Vol.25 (16), p.18502-18507

2017

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High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection

Optics letters, 2021-06, Vol.46 (11), p.2670-2673

2021

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Growth of droplet-free InSbBi on GaAs substrate

AIP advances, 2023-12, Vol.13 (12), p.125221-125221-6

2023

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Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.128-135

2015

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Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2023-10, Vol.296, p.116665, Article 116665

2023

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Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

Semiconductor science and technology, 2016-09, Vol.31 (9), p.95001

2016

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Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array

Applied surface science, 2017-03, Vol.399, p.220-228

2017

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Germanium-Tin heterojunction phototransistor: Towards high-efficiency low-power photodetection in short-wave infrared range

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers

AIP advances, 2021-04, Vol.11 (4), p.045203-045203-5

2021

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Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

Materials letters, 2015-11, Vol.158, p.258-261

2015

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Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

Optics express, 2017-12, Vol.25 (25), p.31853-31862

2017

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Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode

Quantum science and technology, 2023-04, Vol.8 (2), p.25009

2023

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Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

AIP advances, 2016-02, Vol.6 (2), p.025028-025028-7

2016

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Monolithic integration of InGaAs n-FETs and lasers on Ge substrate

Optics express, 2017-03, Vol.25 (5), p.5146-5155

2017

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Direct Optical Tuning of the Terahertz Plasmonic Response of InSb Subwavelength Gratings

Advanced optical materials, 2013-02, Vol.1 (2), p.128-132

2013

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Room Temperature 3.5- \mu \text Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

IEEE photonics technology letters, 2016-08, Vol.28 (15), p.1653-1656

2016

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High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

Mid-Infrared InAs Photodetector Grown on GaAs Substrate Through Cation Exchange

Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate

Dry Etched Waveguide Laser Diode on GeOI

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth

Direct bandgap photoluminescence from n-type indirect GaInP alloys

Infrared spectroscopic ellipsometry study of sulfur-doped In0.53Ga0.47As ultra-shallow junctions

High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique

Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range

High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection

Growth of droplet-free InSbBi on GaAs substrate

Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array

Germanium-Tin heterojunction phototransistor: Towards high-efficiency low-power photodetection in short-wave infrared range

Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers

Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode

Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer

Monolithic integration of InGaAs n-FETs and lasers on Ge substrate

Direct Optical Tuning of the Terahertz Plasmonic Response of InSb Subwavelength Gratings

Room Temperature 3.5- \mu \text Mid-Infrared InAs Photovoltaic Detector on a Si Substrate

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