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Quantum Dashes on InP Substrate for Broadband Emitter Applications

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1230-1238

2008

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Monolithic integration of InP-based transistors on Si substrates using MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1979-1983

2009

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Quantum Dash Intermixing

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1239-1249

2008

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Wideband DHBTs using a graded carbon-doped InGaAs base

IEEE electron device letters, 2003-07, Vol.24 (7), p.433-435

2003

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Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si

Journal of luminescence, 2020-12, Vol.228, p.117581, Article 117581

2020

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Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

IEEE electron device letters, 2006-05, Vol.27 (5), p.313-316

2006

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Ultrahigh-Speed 0.5 V Supply Voltage \hbox \hbox\hbox Quantum-Well Transistors on Silicon Substrate

IEEE electron device letters, 2007-08, Vol.28 (8), p.685-687

2007

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A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

2009 IEEE MTT-S International Microwave Symposium Digest, 2009, p.1113-1116

2009

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Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

Electronics letters, 2007, Vol.43 (1), p.33-35

2007

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Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

Thin solid films, 2007-03, Vol.515 (10), p.4344-4347

2007

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Ultrahigh-Speed 0.5 V Supply Voltage In0.7 Ga0.3As Quantum-Well Transistors on Silicon Substrate

IEEE electron device letters, 2007-08, Vol.28 (8), p.685

2007

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200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.16-19

2009

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InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, fmax/spl ges/450 GHz

IEEE electron device letters, 2005-08, Vol.26 (8), p.530-532

2005

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Four-band quantum well infrared photodetector array

Infrared physics & technology, 2003-10, Vol.44 (5), p.369-375

2003

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MBE development of dilute nitrides for commercial long-wavelength laser applications

Journal of crystal growth, 2003-04, Vol.251 (1), p.432-436

2003

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InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

IEEE electron device letters, 2005-08, Vol.26 (8), p.530-532

2005

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InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax

IEEE electron device letters, 2005-01, Vol.26 (1), p.11

2005

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InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max

IEEE electron device letters, 2005-01, Vol.26 (1), p.11-13

2005

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640 × 512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays

Infrared physics & technology, 2003, Vol.44 (5), p.411-425

2003

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InGaAs-InP mesa DHBTs with simultaneously high f[tau] and fmax and low Ccb/Ic ratio

IEEE electron device letters, 2004-05, Vol.25 (5), p.250

2004

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InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and fmax and low C/sub cb//I/sub c/ ratio

IEEE electron device letters, 2004-05, Vol.25 (5), p.250-252

2004

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InGaAs–InP Mesa DHBTs With Simultaneously High $f_tau$ and $f_max$ and Low $C_rm cb/I_c$ Ratio

IEEE electron device letters, 2004-05, Vol.25 (5), p.250-252

2004

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Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.100-104

2009

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Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

2009 IEEE International SOI Conference, 2009, p.1-2

2009

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Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications

2007 IEEE International Electron Devices Meeting, 2007, p.625-628

2007

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Quantum Dashes on InP Substrate for Broadband Emitter Applications

Monolithic integration of InP-based transistors on Si substrates using MBE

Quantum Dash Intermixing

Wideband DHBTs using a graded carbon-doped InGaAs base

Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si

Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

Ultrahigh-Speed 0.5 V Supply Voltage \hbox \hbox\hbox Quantum-Well Transistors on Silicon Substrate

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

Ultrahigh-Speed 0.5 V Supply Voltage In0.7 Ga0.3As Quantum-Well Transistors on Silicon Substrate

200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, fmax/spl ges/450 GHz

Four-band quantum well infrared photodetector array

MBE development of dilute nitrides for commercial long-wavelength laser applications

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f[tau] and 505-GHz fmax

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max

640 × 512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays

InGaAs-InP mesa DHBTs with simultaneously high f[tau] and fmax and low Ccb/Ic ratio

InGaAs-InP mesa DHBTs with simultaneously high f/sub /spl tau// and fmax and low C/sub cb//I/sub c/ ratio

InGaAs–InP Mesa DHBTs With Simultaneously High $f_tau$ and $f_max$ and Low $C_rm cb/I_c$ Ratio

Progress and challenges in the direct monolithic integration of III-V devices and Si CMOS on silicon substrates

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications

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