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Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Journal of applied physics, 2012-11, Vol.112 (9)

2012

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Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Journal of applied physics, 2013-01, Vol.113 (2)

2013

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Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Monolithic integration of InP-based transistors on Si substrates using MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1979-1983

2009

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Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

Optics letters, 2007-01, Vol.32 (1), p.44

2007

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Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si

Journal of applied physics, 2021-01, Vol.129 (1)

2021

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InP-based quantum cascade lasers monolithically integrated onto silicon

Optics express, 2018-08, Vol.26 (17), p.22389-22393

2018

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Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate

Applied physics letters, 2018-01, Vol.112 (3)

2018

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Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate

IEEE electron device letters, 2007-08, Vol.28 (8), p.685-687

2007

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Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

Electronics letters, 2007, Vol.43 (1), p.33-35

2007

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Wideband DHBTs using a graded carbon-doped InGaAs base

IEEE electron device letters, 2003-07, Vol.24 (7), p.433-435

2003

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Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices

Journal of applied physics, 2002-01, Vol.91 (2), p.551-564

2002

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Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors

Applied physics letters, 2012-12, Vol.101 (24)

2012

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MBE development of dilute nitrides for commercial long-wavelength laser applications

Journal of crystal growth, 2003-04, Vol.251 (1), p.432-436

2003

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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Applied physics letters, 2011-12, Vol.99 (25), p.251110-251110-3

2011

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Four-band quantum well infrared photodetector array

Infrared physics & technology, 2003-10, Vol.44 (5), p.369-375

2003

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox

IEEE electron device letters, 2011-01, Vol.32 (1), p.24-26

2011

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Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si

Journal of luminescence, 2020-12, Vol.228, p.117581, Article 117581

2020

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Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1200-1204

2002

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Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

Thin solid films, 2007-03, Vol.515 (10), p.4344-4347

2007

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Interband cascade infrared photodetectors with enhanced electron barriers and p -type superlattice absorbers

Journal of applied physics, 2012-01, Vol.111 (2), p.024510-024510-6

2012

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1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

69th Device Research Conference, 2011, p.271-272

2011

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Quantum well infrared photodetectors for low background applications

Infrared physics & technology, 2001-06, Vol.42 (3), p.237-242

2001

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High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

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Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Monolithic integration of InP-based transistors on Si substrates using MBE

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser

Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si

InP-based quantum cascade lasers monolithically integrated onto silicon

Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate

Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate

Wavelength tuning of InAs/InAlGaAs quantum-dash-in-well laser using postgrowth intermixing

Wideband DHBTs using a graded carbon-doped InGaAs base

Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices

Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors

MBE development of dilute nitrides for commercial long-wavelength laser applications

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Four-band quantum well infrared photodetector array

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox

Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

Interband cascade infrared photodetectors with enhanced electron barriers and p -type superlattice absorbers

1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

Quantum well infrared photodetectors for low background applications

High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

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