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Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Applied physics letters, 2006-08, Vol.89 (8)

2006

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Lifetime of nonequilibrium carriers in high-Al-content AlGaN epilayers

Physica status solidi. A, Applications and materials science, 2005-01, Vol.202 (1), p.126-130

2005

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Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

Applied physics letters, 2007-05, Vol.90 (22), p.221909-221909-3

2007

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High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition

Applied physics letters, 2004-03, Vol.84 (11), p.1892-1894

2004

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Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate

Physica status solidi. C, 2005-05, Vol.2 (7), p.2095-2098

2005

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Time-resolved experimental study of carrier lifetime in GaN epilayers

Applied physics letters, 2005-12, Vol.87 (24), p.241918-241918-3

2005

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Exciton hopping and nonradiative decay in AlGaN epilayers

Applied physics letters, 2005-10, Vol.87 (17), p.172102-172102-3

2005

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Structural studies on MOCVD grown GaN and AlGaN using atomic force microscopy

Materials chemistry and physics, 2000-05, Vol.64 (3), p.260-264

2000

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High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

Applied physics letters, 2005-04, Vol.86 (14)

2005

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Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

Solid-state electronics, 2000-09, Vol.44 (9), p.1669-1677

2000

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Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

Applied physics letters, 1999-08, Vol.75 (7), p.950-952

1999

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Simulation studies on the liquid phase electroepitaxial growth of III–V compound semiconductors

Journal of crystal growth, 2001-07, Vol.229 (1), p.169-174

2001

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Surface morphology studies on sublimation grown GaN by atomic force microscopy

Journal of crystal growth, 1999-04, Vol.200 (3), p.348-352

1999

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Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and Monte Carlo simulation

Physica status solidi. C, 2006-06, Vol.3 (6), p.2099-2102

2006

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Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDTM

Physica status solidi. C, 2006-06, Vol.3 (6), p.1923-1926

2006

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Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method

Journal of crystal growth, 1999-12, Vol.207 (3), p.174-178

1999

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Infrared properties of bulk GaN

Applied physics letters, 1999-05, Vol.74 (19), p.2788-2790

1999

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Investigations on the undersaturated liquid phase epitaxial growth of AlxGa1-xAs

Journal of crystal growth, 2000, Vol.212 (1-2), p.29-34

2000

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Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD

Journal of crystal growth, 1999-04, Vol.200 (1), p.85-89

1999

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Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method

Journal of applied physics, 1999-02, Vol.85 (3), p.1895-1899

1999

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An investigation of the diffusion and electromigration limited growth mechanism of InP

Materials science & engineering. B, Solid-state materials for advanced technology, 1995, Vol.34 (2), p.152-158

1995

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Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

Applied physics letters, 2004-02, Vol.84 (5), p.696-698

2004

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Pulsed lateral epitaxial overgrowth of aluminum nitrideon sapphire substrates

Applied physics letters, 2006-08, Vol.89 (8), p.081905-081905-3

2006

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Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition

Applied physics letters, 2000-10, Vol.77 (15), p.2343-2345

2000

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High-power AlGaN ∕ InGaN ∕ AlGaN ∕ GaN recessed gate heterostructurefield-effect transistors

Applied physics letters, 2005-04, Vol.86 (14), p.143512-143512-3

2005

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Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Lifetime of nonequilibrium carriers in high-Al-content AlGaN epilayers

Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition

Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate

Time-resolved experimental study of carrier lifetime in GaN epilayers

Exciton hopping and nonradiative decay in AlGaN epilayers

Structural studies on MOCVD grown GaN and AlGaN using atomic force microscopy

High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

Simulation studies on the liquid phase electroepitaxial growth of III–V compound semiconductors

Surface morphology studies on sublimation grown GaN by atomic force microscopy

Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and Monte Carlo simulation

Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDTM

Dependence of growth conditions on morphology in lateral epitaxial overgrowth of GaN by sublimation method

Infrared properties of bulk GaN

Investigations on the undersaturated liquid phase epitaxial growth of AlxGa1-xAs

Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD

Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method

An investigation of the diffusion and electromigration limited growth mechanism of InP

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

Pulsed lateral epitaxial overgrowth of aluminum nitrideon sapphire substrates

Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition

High-power AlGaN ∕ InGaN ∕ AlGaN ∕ GaN recessed gate heterostructurefield-effect transistors

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