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Analysis of GaN MagHEMTs

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95015

2018

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Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1937-1941

2019

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Simulation of solo GaN IGBTs

2017 IEEE 30th International Conference on Microelectronics (MIEL), 2017, p.75-78

2017

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High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

2017 IEEE 30th International Conference on Microelectronics (MIEL), 2017, p.55-59

2017

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Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, 2014, p.81-84

2014

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Analysis of GaN MagFETs compatible with RF power technology

2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2018, p.0050-0053

2018

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Modelling and optimization of GaN capped HEMTs

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems, 2014, p.1-4

2014

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Scaling and traps induced degradation of cutoff frequency in GaN HEMT

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016, p.181-184

2016

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TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, 2012, p.11-14

2012

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GaN technology for power RF applications: Present reliability roadblocks and future trends

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, 2014, p.77-80

2014

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Simulation of current collapse in the 0.25 µm gate Length Al0.28Ga0.72N/GaN HEMT

2012 28th International Conference on Microelectronics Proceedings, 2012, p.233-236

2012

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The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016, p.203-206

2016

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Analysis of GaN HEMTs Switching Transients Using Compact Model

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2900-2905

2017

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Wireless Communication Test on 868 MHz and 2.4 GHz from inside the 18650 Li-Ion Enclosed Metal Shell

Sensors (Basel, Switzerland), 2022-03, Vol.22 (5), p.1966

2022

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DC Power Line Communication (PLC) on 868 MHz and 2.4 GHz Wired RF Transceivers

Sensors (Basel, Switzerland), 2022-03, Vol.22 (5), p.2043

2022

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Buried RF Sensors for Smart Road Infrastructure: Empirical Communication Range Testing, Propagation by Line of Sight, Diffraction and Reflection Model and Technology Comparison for 868 MHz-2.4 GHz

Sensors (Basel, Switzerland), 2023-02, Vol.23 (3), p.1669

2023

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Impact of Li-Ion Battery on System's Overall Impedance and Received Signal Strength for Power Line Communication (PLC)

Sensors (Basel, Switzerland), 2022-03, Vol.22 (7), p.2634

2022

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GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

IEEE access, 2024, Vol.12, p.13783-13794

2024

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Impact of V\mathsf Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

IEEE transactions on power electronics, 2024-09, Vol.39 (9), p.11625-11636

2024

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A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

Journal of computational electronics, 2022-02, Vol.21 (1), p.191-196

2022

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Evaluation of the impact of urban water systems on railways: The scenario of track flooding caused by a water main burst

Proceedings of the Institution of Mechanical Engineers. Part F, Journal of rail and rapid transit, 2020-03, Vol.234 (3), p.351-358

2020

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TCAD Modelling of Magnetic Hall Effect Sensors

Inventions (Basel), 2024-07, Vol.9 (4), p.72

2024

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Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4367-4372

2019

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Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application

Semiconductor science and technology, 2014-02, Vol.29 (2), p.25007

2014

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Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

IEEE electron device letters, 2018-05, Vol.39 (5), p.746-748

2018

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Analysis of GaN MagHEMTs

Study of GaN Dual-Drain Magnetic Sensor Performance at Elevated Temperatures

Simulation of solo GaN IGBTs

High sensitivity magnetic sensors compatible with bulk silicon and SOI IC technology

Modeling of 2DEG and 2DHG in i-GaN capped AlGaN/AlN/GaN HEMTs

Analysis of GaN MagFETs compatible with RF power technology

Modelling and optimization of GaN capped HEMTs

Scaling and traps induced degradation of cutoff frequency in GaN HEMT

TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

GaN technology for power RF applications: Present reliability roadblocks and future trends

Simulation of current collapse in the 0.25 µm gate Length Al0.28Ga0.72N/GaN HEMT

The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

Analysis of GaN HEMTs Switching Transients Using Compact Model

Wireless Communication Test on 868 MHz and 2.4 GHz from inside the 18650 Li-Ion Enclosed Metal Shell

DC Power Line Communication (PLC) on 868 MHz and 2.4 GHz Wired RF Transceivers

Buried RF Sensors for Smart Road Infrastructure: Empirical Communication Range Testing, Propagation by Line of Sight, Diffraction and Reflection Model and Technology Comparison for 868 MHz-2.4 GHz

Impact of Li-Ion Battery on System's Overall Impedance and Received Signal Strength for Power Line Communication (PLC)

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Impact of V\mathsf Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

Evaluation of the impact of urban water systems on railways: The scenario of track flooding caused by a water main burst

TCAD Modelling of Magnetic Hall Effect Sensors

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

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