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AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4084-4089

2014

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Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth

Journal of crystal growth, 2017-04, Vol.464, p.119-122

2017

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Reliability Assessment of InAlN/GaN HFETs With Lifetime 8.9\times 10^} h

IEEE electron device letters, 2017-05, Vol.38 (5), p.604-606

2017

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A magnetically recyclable magnetic graphite oxide composite functionalized with polydopamine and β-cyclodextrin for cationic dyes wastewater remediation: Investigation on adsorption performance, reusability and adsorption mechanism

Applied surface science, 2022-11, Vol.602, p.154338, Article 154338

2022

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High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.106-109

2018

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Novel N-ZnO/p-BN adsorption-photocatalytic composites with interfacial bonding for efficient synergistic degradation of pollutants in water

Applied surface science, 2024-12, Vol.677, p.161060, Article 161060

2024

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Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

Physica status solidi. A, Applications and materials science, 2012-06, Vol.209 (6), p.1174-1178

2012

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied surface science, 2021-04, Vol.544, p.148773, Article 148773

2021

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Theoretical exploration of AlB2 monolayer with high energy storage properties in the field of ion battery materials

Computational materials science, 2024-10, Vol.245, p.113291, Article 113291

2024

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Propagation of light beam through a uniaxially anisotropic chiral cylinder

Optik (Stuttgart), 2020-04, Vol.208, p.164109, Article 164109

2020

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Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations

Materials science in semiconductor processing, 2024-11, Vol.182, p.108682, Article 108682

2024

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Study and reduction of the surface pits in 4H-SiC epitaxial wafer

Journal of crystal growth, 2023-05, Vol.610, p.127156, Article 127156

2023

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Influence of inlet structures of planetary reactor on gas reaction path in AlN-MOVPE process

Journal of crystal growth, 2021-01, Vol.554, p.125942, Article 125942

2021

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W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

Journal of semiconductors, 2015-08, Vol.36 (8), p.171-173

徐鹏宋旭波吕元杰王元刚敦少博尹甲运房玉龙顾国栋冯志红蔡树军

2015

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High-frequency AlGaN/GaN HFETs with fT/fmax of 149/263 GHz for D-band PA applications

Electronics letters, 2016-07, Vol.52 (15), p.1340-1342

2016

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A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

Journal of semiconductors, 2011-12, Vol.32 (12), p.124003

2011

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GaN planar Schottky barrier diode with cut-off frequency of 902 GHz

Electronics letters, 2016-08, Vol.52 (16), p.1408-1410

2016

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The superconducting Dirac AlB6 monolayer as an excellent anode material for Li/Na ion batteries

Materials today communications, 2024-06, Vol.39, p.109325, Article 109325

2024

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High-frequency AlGaN/GaN HFETs with f sub(T)/f sub(max) of 149/263 GHz for D-band PA applications

Electronics letters, 2016-07, Vol.52 (15), p.1340-1342

2016

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Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

Journal of semiconductors, 2012-05, Vol.33 (5), p.53-56

房玉龙敦少博刘波尹甲运蔡树军冯志红

2012

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High‐frequency InAlN/GaN HFET with f max over 400 GHz

Electronics letters, 2018-06, Vol.54 (12), p.783-785

2018

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High-frequency InAlN/GaN HFET with fmax over 400 GHz

Electronics letters, 2018-06, Vol.54 (12), p.783-785

2018

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Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

Electronics letters, 2015-11, Vol.51 (23), p.1889-1891

2015

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Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Applied physics letters, 2013-09, Vol.103 (11), p.113502

2013

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Simulation study of GaN-based HFETs with graded AlGaN barrier

Solid-state electronics, 2015-07, Vol.109, p.90-94

2015

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AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth

Reliability Assessment of InAlN/GaN HFETs With Lifetime 8.9\times 10^} h

A magnetically recyclable magnetic graphite oxide composite functionalized with polydopamine and β-cyclodextrin for cationic dyes wastewater remediation: Investigation on adsorption performance, reusability and adsorption mechanism

High-Uniformity and High Drain Current Density Enhancement-Mode AlGaN/GaN Gates-Seperating Groove HFET

Novel N-ZnO/p-BN adsorption-photocatalytic composites with interfacial bonding for efficient synergistic degradation of pollutants in water

Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Theoretical exploration of AlB2 monolayer with high energy storage properties in the field of ion battery materials

Propagation of light beam through a uniaxially anisotropic chiral cylinder

Influence of porous media and substrate rotation on AlN growth in MNVPE reactors based on CFD simulations

Study and reduction of the surface pits in 4H-SiC epitaxial wafer

Influence of inlet structures of planetary reactor on gas reaction path in AlN-MOVPE process

W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

High-frequency AlGaN/GaN HFETs with fT/fmax of 149/263 GHz for D-band PA applications

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

GaN planar Schottky barrier diode with cut-off frequency of 902 GHz

The superconducting Dirac AlB6 monolayer as an excellent anode material for Li/Na ion batteries

High-frequency AlGaN/GaN HFETs with f sub(T)/f sub(max) of 149/263 GHz for D-band PA applications

Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

High‐frequency InAlN/GaN HFET with f max over 400 GHz

High-frequency InAlN/GaN HFET with fmax over 400 GHz

Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Simulation study of GaN-based HFETs with graded AlGaN barrier

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