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Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Nanoscale research letters, 2015-03, Vol.10 (1), p.141-141, Article 141

2015

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Location Performance Test and Evaluation for Tri-Station Time Difference of Arrival System

Journal of communications technology & electronics, 2021-12, Vol.66 (Suppl 2), p.S175-S184

2021

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Form factors $ f_{ + }^{{B \to \pi }}(0) $ and $ f_{ + }^{{D \to \pi }}(0) $ in QCD and determination of |V ub | and |V cd

The journal of high energy physics, 2012-05, Vol.2012 (5), Article 160

2012

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Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures

Materials science in semiconductor processing, 2016-06, Vol.48, p.9-13

2016

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Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs

Wuli xuebao, 2014-07, Vol.63 (14), p.148502

2014

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Quantitative analysis on the influences of the precursor and annealing temperature on Nd2O3 film composition

Wuli xuebao, 2013-02, Vol.62 (3), p.37701

2013

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Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Wuli xuebao, 2013-05, Vol.62 (10), p.108501

2013

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Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on a Ge substrate

中国物理B：英文版, 2013-03 (3), p.501-504

樊继斌刘红侠费晨曦马飞范晓娇郝跃

2013

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Form factors and in QCD and determination of |Vub| and |Vcd

The journal of high energy physics, 2012-05, Vol.2012 (5)

2012

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Silicon diffusion control in atomic-layer-deposited Al^sub 2^O3/La^sub 2^O3/Al^sub 2^O3 gate stacks using an Al^sub 2^O3 barrier layer

Nanoscale research letters, 2015-03, Vol.10 (1), p.1

2015

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Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al sub(2)O sub(3)/La sub(2)O sub(3) high dielectric structures

Materials science in semiconductor processing, 2016-06, Vol.48, p.9-13

2016

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Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, 2012, p.1-4

2012

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Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric

Wuli xuebao, 2014, Vol.63 (24), p.248502

2014

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Evidence of GeO volatilization and its effect on the characteristics of HfO sub(2) grown on a Ge substrate

Chinese physics B, 2013-03, Vol.22 (3), p.037702-1-037702-4

2013

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Evidence of GeO volatilization and its effect on the characteristics of HfO 2 grown on a Ge substrate

Chinese physics B, 2013-03, Vol.22 (3), p.37702

2013

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Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo

Wuli xuebao, 2013, Vol.62 (15), p.158502

2013

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Prognostic Significance of Tumor-infiltrating CD8^＋ or CD3^＋ T Lymphocytes and Interleukin-2 Expression in Radically Resected Non-small Cell Lung Cancer

Chinese medical journal, 2015-01, Vol.128 (1), p.105-110

2015

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Novel serpentine structure design method considering confidence level and estimation precision

Frontiers of information technology & electronic engineering, 2013-03, Vol.14 (3), p.222-234

2013

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Implications of family nonuniversal Z ′ model on B → K 0 ( 1430 ) π decays

Physical review. D, Particles, fields, gravitation, and cosmology, 2012-04, Vol.85 (7), Article 074010

2012

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Implications of family nonuniversal Z' model on B arrow right K sub(0) (1430)[pi] decays

Physical review. D, Particles, fields, gravitation, and cosmology, 2012-04, Vol.85 (7)

2012

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内质网应激的信号通路以及调控机制

浙江大学学报：B卷英文版, 2017, Vol.18 (1), p.1-14

Jing GONG Xing-zhi WANG Tao WANG Jiao-jiao CHEN Xiao-yuan XIE Hui HU Fang YU Hui-lin LIU Xing-yan JIANG Han-dong FAN

2017

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内质网应激的信号通路以及调控机制（英文）

浙江大学学报：B卷英文版, 2017 (1), p.1-14

Jing GONG Xing-zhi WANG Tao WANG Jiao-jiao CHEN Xiao-yuan XIE Hui HU Fang YU Hui-lin LIU Xing-yan JIANG Han-dong FAN

2017

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Extracts of Knoxia roxburghii (Spreng.) M. A. Rau Induce Apoptosis in Human MCF-7 Breast Cancer Cells via Mitochondrial Pathways

Molecules (Basel, Switzerland), 2022-09, Vol.27 (19), p.6435

2022

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Nanoscale chemical characterization of materials and interfaces by tip-enhanced Raman spectroscopy

Chemical Society reviews, 2024-10, Vol.53 (20), p.10044-10079

2024

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Ultralow‐Frequency Tip‐Enhanced Raman Scattering Discovers Nanoscale Radial Breathing Mode on Strained 2D Semiconductors

Advanced materials (Weinheim), 2024-08, Vol.36 (35), p.e2405433-n/a

2024

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Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

Location Performance Test and Evaluation for Tri-Station Time Difference of Arrival System

Form factors $ f_{ + }^{{B \to \pi }}(0) $ and $ f_{ + }^{{D \to \pi }}(0) $ in QCD and determination of |V ub | and |V cd

Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al2O3/La2O3 high dielectric structures

Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs

Quantitative analysis on the influences of the precursor and annealing temperature on Nd2O3 film composition

Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor

Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on a Ge substrate

Form factors and in QCD and determination of |Vub| and |Vcd

Silicon diffusion control in atomic-layer-deposited Al^sub 2^O3/La^sub 2^O3/Al^sub 2^O3 gate stacks using an Al^sub 2^O3 barrier layer

Flat band voltage modulation of AlGaN/GaN MOS capacitor with stacked Al sub(2)O sub(3)/La sub(2)O sub(3) high dielectric structures

Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric

Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric

Evidence of GeO volatilization and its effect on the characteristics of HfO sub(2) grown on a Ge substrate

Evidence of GeO volatilization and its effect on the characteristics of HfO 2 grown on a Ge substrate

Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo

Prognostic Significance of Tumor-infiltrating CD8^＋ or CD3^＋ T Lymphocytes and Interleukin-2 Expression in Radically Resected Non-small Cell Lung Cancer

Novel serpentine structure design method considering confidence level and estimation precision

Implications of family nonuniversal Z ′ model on B → K 0 ( 1430 ) π decays

Implications of family nonuniversal Z' model on B arrow right K sub(0) (1430)[pi] decays

内质网应激的信号通路以及调控机制

内质网应激的信号通路以及调控机制（英文）

Extracts of Knoxia roxburghii (Spreng.) M. A. Rau Induce Apoptosis in Human MCF-7 Breast Cancer Cells via Mitochondrial Pathways

Nanoscale chemical characterization of materials and interfaces by tip-enhanced Raman spectroscopy

Ultralow‐Frequency Tip‐Enhanced Raman Scattering Discovers Nanoscale Radial Breathing Mode on Strained 2D Semiconductors

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