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Thermally stable piezoelectric sensors for quantitative pressure sensing based on linear piezoelectric zinc oxide thin films

Materials & design, 2023-11, Vol.235, p.112466, Article 112466

2023

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Corrigendum to ‘Thermally stable piezoelectric sensors for quantitative pressure sensing based on linear piezoelectric zinc oxide thin films’ [Mater. Design 235 (2023) 112466]

Materials & design, 2024-01, Vol.237, p.112498, Article 112498

2024

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Temperature-Dependent Optical Properties of Perovskite Quantum Dots with Mixed-A-Cations

Micromachines (Basel), 2022-03, Vol.13 (3), p.457

2022

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Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light-Emitting Diodes

IEEE photonics technology letters, 2007-08, Vol.19 (15), p.1121-1123

2007

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Phosphorylation of adducin-1 by TPX2 promotes interpolar microtubule homeostasis and precise chromosome segregation in mouse oocytes

Cell & bioscience, 2022-12, Vol.12 (1), p.205-205, Article 205

2022

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Control of morphology and orientation for textured nanocrystalline indium oxide thin film: A growth zone diagram

Materials & design, 2017-10, Vol.131, p.410-418

2017

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Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3375-3382

2008

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High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

Nanomaterials (Basel, Switzerland), 2024-01, Vol.14 (3), p.267

2024

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Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1184-1188

2015

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Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement

Frontiers in materials, 2022-02, Vol.9

2022

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A chip-level electrothermal-coupled design model for high-power light-emitting diodes

Journal of applied physics, 2010-03, Vol.107 (5)

2010

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GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity

IEEE electron device letters, 2015-04, Vol.36 (4), p.372-374

2015

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Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

Current Applied Physics, 2015, 15(4), , pp.441-445

2015

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Correlation between grain orientation and carrier concentration of poly-crystalline In2O3 thin film grown by MOCVD

Journal of materials science, 2015-02, Vol.50 (3), p.1058-1064

2015

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Effects of growth pressure on the properties of p-GaN layers

Journal of crystal growth, 2011-06, Vol.325 (1), p.32-35

2011

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Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

Journal of display technology, 2013-04, Vol.9 (4), p.266-271

2013

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Photopolymerization of acrylate resin and ceramic suspensions with benzylidene ketones under blue/green LED

Polymer (Guilford), 2019-12, Vol.184, p.121841, Article 121841

2019

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Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers

Journal of crystal growth, 2014-02, Vol.387, p.52-56

2014

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Properties of mesoporous hybrid perovskite nanocrystals and its application in light-emitting diodes

Nanotechnology, 2021-11, Vol.32 (48), p.485708

2021

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Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

Journal of crystal growth, 2011, Vol.314 (1), p.202-206

2011

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Multicomponent photoinitiating systems containing arylamino oxime ester for visible light photopolymerization

Progress in organic coatings, 2019-10, Vol.135, p.517-524

2019

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The influences of light scattering on digital light processing high-resolution ceramic additive manufacturing

Ceramics international, 2024-03, Vol.50 (6), p.9556-9562

2024

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Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes

Journal of display technology, 2013-04, Vol.9 (4), p.260-265

2013

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Metallic layered VSe2 saturable absorber based single- and dual-wavelength ultrafast fiber laser

Optical fiber technology, 2024-05, Vol.84, p.103764, Article 103764

2024

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Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

Journal of display technology, 2013-04, Vol.9 (4), p.255-259

2013

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Thermally stable piezoelectric sensors for quantitative pressure sensing based on linear piezoelectric zinc oxide thin films

Corrigendum to ‘Thermally stable piezoelectric sensors for quantitative pressure sensing based on linear piezoelectric zinc oxide thin films’ [Mater. Design 235 (2023) 112466]

Temperature-Dependent Optical Properties of Perovskite Quantum Dots with Mixed-A-Cations

Study of Phosphor Thermal-Isolated Packaging Technologies for High-Power White Light-Emitting Diodes

Phosphorylation of adducin-1 by TPX2 promotes interpolar microtubule homeostasis and precise chromosome segregation in mouse oocytes

Control of morphology and orientation for textured nanocrystalline indium oxide thin film: A growth zone diagram

Thermal Study of High-Power Nitride-Based Flip-Chip Light-Emitting Diodes

High Thermal Performance Ultraviolet (368 nm) AlGaN-Based Flip-Chip LEDs with an Optimized Structure

Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement

A chip-level electrothermal-coupled design model for high-power light-emitting diodes

GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity

Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

Correlation between grain orientation and carrier concentration of poly-crystalline In2O3 thin film grown by MOCVD

Effects of growth pressure on the properties of p-GaN layers

Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes

Photopolymerization of acrylate resin and ceramic suspensions with benzylidene ketones under blue/green LED

Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers

Properties of mesoporous hybrid perovskite nanocrystals and its application in light-emitting diodes

Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

Multicomponent photoinitiating systems containing arylamino oxime ester for visible light photopolymerization

The influences of light scattering on digital light processing high-resolution ceramic additive manufacturing

Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes

Metallic layered VSe2 saturable absorber based single- and dual-wavelength ultrafast fiber laser

Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

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