UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 35

Sortiert nach

Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Journal of crystal growth, 2017-10, Vol.475 (C), p.83-87

2017

Volltextzugriff (PDF)

Applications of dynamical theory of X‐ray diffraction by perfect crystals to reciprocal space mapping

Journal of applied crystallography, 2017-10, Vol.50 (5), p.1256-1266

2017

Volltextzugriff (PDF)

Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Journal of applied physics, 2016-11, Vol.120 (18)

2016

Volltextzugriff (PDF)

Growth of high crystal quality InN by ENABLE-MBE

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.577-580

2014

Volltextzugriff (PDF)

Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties

Journal of crystal growth, 2015-09, Vol.425 (C), p.49-53

2015

Volltextzugriff (PDF)

Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Journal of physics. D, Applied physics, 2016-07, Vol.49 (30), p.305102

2016

Volltextzugriff (PDF)

Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell

IEEE electron device letters, 2010-01, Vol.31 (1), p.32-34

2010

Volltextzugriff (PDF)

Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

Journal of crystal growth, 2015-09, Vol.425 (C), p.43-48

2015

Volltextzugriff (PDF)

Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Journal of crystal growth, 2017-10, Vol.475 (C)

2017

Volltextzugriff (PDF)

Induced junction III-nitride solar cells for wide band gap solar cells: Modeling charge transport and band bending in polarized material

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2144-2146

2013

Volltextzugriff (PDF)

Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, p.1-5

2015

Volltextzugriff (PDF)

Dual-functional light-emitting and photo-detecting GaAsPN heterostructures on silicon

Materials science in semiconductor processing, 2023-12, Vol.168, p.107867, Article 107867

2023

Volltextzugriff (PDF)

Crystalline Perfection of Epitaxial Structure: Correlations with Composition, Thickness, and Elastic Strain of Epitaxial Layers

MRS proceedings, 2009, Vol.1167 (1), Article 1167-O07-04

2009

Volltextzugriff (PDF)

Hetero-emitter GaP/Si solar cells with high Si bulk lifetime

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.1950-1953

2016

Volltextzugriff (PDF)

Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, p.1-4

2015

Volltextzugriff (PDF)

Epitaxial growth: Phenomenological model of defect creation

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.0724-0728

2014

Volltextzugriff (PDF)

Inducing a junction in n-type InxGa(1−x)N

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

Volltextzugriff (PDF)

AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.2313-2316

2016

Volltextzugriff (PDF)

InGaAs/GaAs MQWs: Correlation of crystal and physical properties

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.0660-0665

2014

Volltextzugriff (PDF)

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

MRS proceedings, 1999, Vol.595, Article F99W8.3

1999

Volltextzugriff (PDF)

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

MRS Internet journal of nitride semiconductor research, 2000, Vol.5 (S1), p.467-473

2000

Volltextzugriff (PDF)

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

St. Petersburg Polytechnical University Journal. Physics and Mathematics, 2024-06, Vol.17 (2)

2024

Volltextzugriff (PDF)

Tryptophanase in aqueous methanol: the solvent effects and a probable mechanism of the hydrophobic control of substrate specificity

Enzyme and microbial technology, 2003-06, Vol.32 (7), p.843-850

2003

Volltextzugriff (PDF)

Passivation of InAs quantum dots for novel photovoltaics

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.001306-001311

2009

Volltextzugriff (PDF)

Water ordering measurements in the aqueous polymer systems by waveguide dielectric resonance method

Mendeleev communications, 2005, Vol.15 (6), p.259-261

2005

Volltextzugriff (PDF)

1 – 25 von 35

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(23)
Mit Volltextzugriff
(28)

Publikationsform

Artikel
(27)
Tagungsberichte
(8)

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(22)
Physical Sciences
(18)
Physics
(14)
Physics, Applied
(13)
Technology
(9)
Photovoltaic Cells
(8)
Gallium Arsenide
(7)
Materials Science
(6)
Molecular Beam Epitaxy
(6)
Engineering
(5)
Engineering, Electrical & Electronic
(5)
Materials Science, Multidisciplinary
(5)
Solar Cells
(5)
X-Ray Diffraction
(5)
Amino Acids
(4)
Chemistry
(4)
Chemistry, Multidisciplinary
(4)
Crystal Defects
(4)
Density
(4)
Diffraction
(4)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Applications of dynamical theory of X‐ray diffraction by perfect crystals to reciprocal space mapping

Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Growth of high crystal quality InN by ENABLE-MBE

Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties

Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell

Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Induced junction III-nitride solar cells for wide band gap solar cells: Modeling charge transport and band bending in polarized material

Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition

Dual-functional light-emitting and photo-detecting GaAsPN heterostructures on silicon

Crystalline Perfection of Epitaxial Structure: Correlations with Composition, Thickness, and Elastic Strain of Epitaxial Layers

Hetero-emitter GaP/Si solar cells with high Si bulk lifetime

Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots

Epitaxial growth: Phenomenological model of defect creation

Inducing a junction in n-type InxGa(1−x)N

AlGaSb based solar cells grown on GaAs by Molecular Beam Epitaxy

InGaAs/GaAs MQWs: Correlation of crystal and physical properties

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Tryptophanase in aqueous methanol: the solvent effects and a probable mechanism of the hydrophobic control of substrate specificity

Passivation of InAs quantum dots for novel photovoltaics

Water ordering measurements in the aqueous polymer systems by waveguide dielectric resonance method

Suchergebnisse filtern