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Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures

Journal of crystal growth, 2021-05, Vol.562 (C), p.126059, Article 126059

2021

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Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell

IEEE electron device letters, 2010-01, Vol.31 (1), p.32-34

2010

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Vibrational properties of AlN grown on (111)-oriented silicon

Physical review. B, Condensed matter, 2001-03, Vol.63 (12), Article 125313

2001

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Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography

Journal of crystal growth, 2013-02, Vol.365, p.44-53

2013

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All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides

Journal of crystal growth, 2013-09, Vol.378, p.631-635

2013

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Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Journal of crystal growth, 2017-10, Vol.475 (C), p.83-87

2017

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Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscopy

Journal of crystal growth, 2013-02, Vol.365, p.35-43

2013

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High growth speed of gallium nitride using ENABLE-MBE

Journal of crystal growth, 2015-09, Vol.425 (C), p.129-132

2015

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Applications of dynamical theory of X‐ray diffraction by perfect crystals to reciprocal space mapping

Journal of applied crystallography, 2017-10, Vol.50 (5), p.1256-1266

2017

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Kinetic and spectral parameters of interaction of Citrobacter freundii methionine γ-lyase with amino acids

Biochemistry (Moscow), 2010-10, Vol.75 (10), p.1272-1280

2010

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The Catalytic Mechanisms of the Reactions between Tryptophan Indole-Lyase and Nonstandard Substrates: The Role of the Ionic State of the Catalytic Group Accepting the Cα Proton of the Substrate

Actanaturae, 2019-07, Vol.11 (3), p.82-88

2019

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Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Journal of applied physics, 2016-11, Vol.120 (18)

2016

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Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

Journal of applied physics, 2004-02, Vol.95 (4), p.1692-1697

2004

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Experimental and theoretical study of acceptor activation and transport properties in p -type AlxGa1−xN/GaN superlattices

Journal of applied physics, 2000-08, Vol.88 (4), p.2030-2038

2000

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Growth of high crystal quality InN by ENABLE-MBE

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.577-580

2014

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Strain and crystal defects in thin AlN/GaN structures on (0001) SiC

Journal of applied physics, 2010-06, Vol.107 (11), p.113529-113529-7

2010

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Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties

Journal of crystal growth, 2015-09, Vol.425 (C), p.49-53

2015

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Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Journal of physics. D, Applied physics, 2016-07, Vol.49 (30), p.305102

2016

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A new approach to wide-angle dynamical X-ray diffraction by deformed crystals

Journal of applied crystallography, 2006-10, Vol.39 (5), p.652-655

2006

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Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates

Journal of crystal growth, 2019-11, Vol.526, p.125231, Article 125231

2019

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Selective growth of high quality GaN on Si(111) substrates

Applied physics letters, 2000-04, Vol.76 (14), p.1842-1844

2000

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Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

Journal of crystal growth, 2015-09, Vol.425 (C), p.43-48

2015

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High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

Applied physics letters, 1999-10, Vol.75 (14), p.2073-2075

1999

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Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures

Journal of crystal growth, 2021-02, Vol.562 (C)

2021

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L-methionine gamma-lyase from Citrobacter freundii: cloning of the gene and kinetic parameters of the enzyme

Biochemistry (Moscow), 2006-04, Vol.71 (4), p.361-369

2006

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Interfacial intermixing and anti-phase boundaries in GaP/Si(001) heterostructures

Design and Realization of Wide-Band-Gap ( \sim 2.67 eV) InGaN p-n Junction Solar Cell

Vibrational properties of AlN grown on (111)-oriented silicon

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: I—High-resolution x-ray diffraction and x-ray topography

All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxides

Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscopy

High growth speed of gallium nitride using ENABLE-MBE

Applications of dynamical theory of X‐ray diffraction by perfect crystals to reciprocal space mapping

Kinetic and spectral parameters of interaction of Citrobacter freundii methionine γ-lyase with amino acids

The Catalytic Mechanisms of the Reactions between Tryptophan Indole-Lyase and Nonstandard Substrates: The Role of the Ionic State of the Catalytic Group Accepting the Cα Proton of the Substrate

Carrier localization effects in GaAs1−xSbx/GaAs heterostructures

Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

Experimental and theoretical study of acceptor activation and transport properties in p -type AlxGa1−xN/GaN superlattices

Growth of high crystal quality InN by ENABLE-MBE

Strain and crystal defects in thin AlN/GaN structures on (0001) SiC

Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties

Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

A new approach to wide-angle dynamical X-ray diffraction by deformed crystals

Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates

Selective growth of high quality GaN on Si(111) substrates

Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures

L-methionine gamma-lyase from Citrobacter freundii: cloning of the gene and kinetic parameters of the enzyme

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