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Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

IEEE transactions on nuclear science, 2024-09, Vol.71 (9), p.2094-2101

2024

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Electron trapping in amorphous Al2O3

Journal of applied physics, 2018-02, Vol.123 (8)

2018

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Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry

IEEE transactions on nuclear science, 2022-06, Vol.69 (6), p.1229-1235

2022

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Numerical modeling of radiation-induced charge neutralization in MOS devices

Radiation measurements, 2022-04, Vol.153, p.106745, Article 106745

2022

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Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate

Microelectronic engineering, 2025-01, Vol.295, p.112277, Article 112277

2025

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Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter

IEEE transactions on nuclear science, 2016-12, Vol.63 (6), p.2997-3002

2016

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Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation

Microelectronics and reliability, 2024-09, Vol.160, p.115468, Article 115468

2024

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Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters

Radiation physics and chemistry (Oxford, England : 1993), 2021-05, Vol.182, p.109338, Article 109338

2021

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Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current

Microelectronics and reliability, 2022-10, Vol.137, p.114752, Article 114752

2022

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6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process

Radiation measurements, 2018-10, Vol.117, p.63-69

2018

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Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Journal of electronic materials, 2018-09, Vol.47 (9), p.5013-5018

2018

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Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

Thin solid films, 2016-02, Vol.600, p.36-42

2016

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Switched Bias Differential MOSFET Dosimeter

IEEE transactions on nuclear science, 2014-06, Vol.61 (3), p.1407-1413

2014

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CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3466-3471

2014

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Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2141-2147

2008

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Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4683-4691

2013

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Floating Gate sensor for in-vivo dosimetry in radiation therapies. Design and first characterization

Journal of physics. Conference series, 2017-01, Vol.792 (1), p.12057

2017

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Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Experimental evidence and modeling of non-monotonic responses in MOS dosimeters

Radiation physics and chemistry (Oxford, England : 1993), 2014-02, Vol.95, p.44-46

2014

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New Fowler-Nordheim Injection, Charge Neutralization, and Gamma Tests on the REM RFT300 RADFET Dosimeter

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3133-3140

2012

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Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, ^ O and p Radiation

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.767-772

2012

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Electrically Erasable Metal-Oxide-Semiconductor Dosimeters

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.1244-1250

2007

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Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Journal of applied physics, 2014-11, Vol.116 (17)

2014

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Numerical Modeling of MOS Dosimeters Under Switched Bias Irradiations

IEEE transactions on nuclear science, 2015-08, Vol.62 (4), p.1665-1673

2015

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Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

Electron trapping in amorphous Al2O3

Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry

Numerical modeling of radiation-induced charge neutralization in MOS devices

Electron trapping in HfO2 layer deposited over a HF last treated silicon substrate

Long Term Effects of Charge Redistribution in Cycled Bias Operating MOS Dosimeter

Numerical modeling of total dose effects on CD4007 MOSFET during switched-bias irradiation

Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters

Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current

6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

Switched Bias Differential MOSFET Dosimeter

CMOS Differential and Amplified Dosimeter with Field Oxide N-Channel MOSFETs

Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge Neutralization

Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

Floating Gate sensor for in-vivo dosimetry in radiation therapies. Design and first characterization

Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Experimental evidence and modeling of non-monotonic responses in MOS dosimeters

New Fowler-Nordheim Injection, Charge Neutralization, and Gamma Tests on the REM RFT300 RADFET Dosimeter

Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, ^ O and p Radiation

Electrically Erasable Metal-Oxide-Semiconductor Dosimeters

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Numerical Modeling of MOS Dosimeters Under Switched Bias Irradiations

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