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Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

Applied physics letters, 2016-02, Vol.108 (7)

2016

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Coupling and Entangling of Quantum States in Quantum Dot Molecules

Science (American Association for the Advancement of Science), 2001-01, Vol.291 (5503), p.451-453

2001

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Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer

Solar energy materials and solar cells, 2020-11, Vol.217, p.110641, Article 110641

2020

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Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer

Solar energy materials and solar cells, 2019-06, Vol.195, p.204-212

2019

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Passive integrated optics elements based on long-range surface plasmon polaritons

Journal of lightwave technology, 2006-01, Vol.24 (1), p.477-494

2006

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Quantum dot infrared photodetectors

Applied physics letters, 2001-01, Vol.78 (1), p.79-81

2001

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Hidden symmetries in the energy levels of excitonic 'artificial atoms'

Nature (London), 2000-06, Vol.405 (6789), p.923-926

2000

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Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy

Physical chemistry chemical physics : PCCP, 2016-01, Vol.18 (44), p.3546-3553

2016

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Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60

Physica status solidi. PSS-RRL. Rapid research letters, 2017-02, Vol.11 (2), p.np-n/a

2017

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Near-surface InAs/GaAs quantum dots with sharp electronic shells

Applied physics letters, 2000-05, Vol.76 (19), p.2707-2709

Fafard, S.

2000

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Size and shape engineering of vertically stacked self-assembled quantum dots

Journal of crystal growth, 1999-05, Vol.201, p.1131-1135

1999

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Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots

Applied physics letters, 1999-12, Vol.75 (23), p.3593-3595

1999

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Intermixing in quantum-dot ensembles with sharp adjustable shells

Applied physics letters, 1999-10, Vol.75 (16), p.2374-2376

1999

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Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots

Physical review. B, Condensed matter, 2002-05, Vol.65 (19), Article 195315

2002

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Exciton dephasing in quantum dot molecules

Physical review letters, 2003-12, Vol.91 (26 Pt 1), p.267401-267401, Article 267401

2003

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Exciton lifetime in InAs ∕ GaAs quantum dot molecules

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (3), Article 035314

2005

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Red-Emitting Semiconductor Quantum Dot Lasers

Science (American Association for the Advancement of Science), 1996-11, Vol.274 (5291), p.1350-1353

1996

Volltextzugriff (PDF)

Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots

Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (8), p.085328.1-085328.7

2005

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InAs self-assembled quantum dots on InP by molecular beam epitaxy

Applied physics letters, 1996-02, Vol.68 (7), p.991-993

1996

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Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots

Science (American Association for the Advancement of Science), 1995-03, Vol.267 (5206), p.1966-1968

1995

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Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching

International Journal of Photoenergy, 2013-01, Vol.2013, p.1-7

2013

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Time-resolved optical characterization of InGaAs/GaAs quantum dots

Applied physics letters, 1994-05, Vol.64 (21), p.2815-2817

1994

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Coupled InAs/GaAs quantum dots with well-defined electronic shells

Applied physics letters, 2000-04, Vol.76 (16), p.2268-2270

2000

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Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

Applied physics letters, 1994-09, Vol.65 (11), p.1388-1390

1994

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Energy relaxation of electrons in InAs/GaAs quantum dot molecules

Physical review. B, Condensed matter and materials physics, 2005-10, Vol.72 (16), p.165353.1-165353.6

2005

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Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

Coupling and Entangling of Quantum States in Quantum Dot Molecules

Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer

Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer

Passive integrated optics elements based on long-range surface plasmon polaritons

Quantum dot infrared photodetectors

Hidden symmetries in the energy levels of excitonic 'artificial atoms'

Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy

Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60

Near-surface InAs/GaAs quantum dots with sharp electronic shells

Size and shape engineering of vertically stacked self-assembled quantum dots

Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots

Intermixing in quantum-dot ensembles with sharp adjustable shells

Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots

Exciton dephasing in quantum dot molecules

Exciton lifetime in InAs ∕ GaAs quantum dot molecules

Red-Emitting Semiconductor Quantum Dot Lasers

Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots

InAs self-assembled quantum dots on InP by molecular beam epitaxy

Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots

Isolation of III-V/Ge Multijunction Solar Cells by Wet Etching

Time-resolved optical characterization of InGaAs/GaAs quantum dots

Coupled InAs/GaAs quantum dots with well-defined electronic shells

Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots

Energy relaxation of electrons in InAs/GaAs quantum dot molecules

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