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Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

Applied physics letters, 2011-07, Vol.99 (2)

2011

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Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation

Japanese Journal of Applied Physics, 2005-09, Vol.44 (9S), p.6981

2005

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Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-03, Vol.34 (2)

2016

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Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge

Journal of applied physics, 2011-07, Vol.110 (2)

2011

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Extensor indicis brevis Muscle: an Unusual Muscular Variant

International journal of morphology, 2012-09, Vol.30 (3), p.1071-1073

2012

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Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique

Electronics and communications in Japan, 2015-06, Vol.98 (6), p.8-15

2015

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Pulsed Shortwave Treatment in Women With Knee Osteoarthritis: A Multicenter, Randomized, Placebo-Controlled Clinical Trial

Physical therapy, 2011-07, Vol.91 (7), p.1009-1017

2011

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Kinesio taping effect on quadriceps strength and lower limb function of healthy individuals: A blinded, controlled, randomized, clinical trial

Physical therapy in sport, 2016-03, Vol.18, p.27-31

2016

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Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature

Jpn J Appl Phys, 2012-09, Vol.51 (9), p.090204-090204-3

2012

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Pulsed Electromagnetic Field and Exercises in Patients With Shoulder Impingement Syndrome: A Randomized, Double-Blind, Placebo-Controlled Clinical Trial

Archives of physical medicine and rehabilitation, 2014-02, Vol.95 (2), p.345-352

2014

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Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

Applied physics letters, 2007-04, Vol.90 (14)

2007

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Low-Temperature Formation of High-Quality \hbox Interlayer for High- \kappa Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.282-287

2010

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Upper trapezius relaxation induced by TENS and interferential current in computer users with chronic nonspecific neck discomfort: An electromyographic analysis

Journal of back and musculoskeletal rehabilitation, 2015-01, Vol.28 (1), p.19-24

2015

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Effects of Electron-Cyclotron-Resonance Oxygen Plasma Irradiation on Properties of Insulator/Ge-Semiconductor Interfaces Prior to Germanium Nitride Formation

Japanese Journal of Applied Physics, 2008-09, Vol.47 (9S), p.7553

2008

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Electrical Behavior of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Oxidation in Capacitance and Conductance Measurements

Japanese Journal of Applied Physics, 2005-11, Vol.44 (11R), p.7928

2005

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Comparison of peak torque, intensity and discomfort generated by neuromuscular electrical stimulation of low and medium frequency

Isokinetics and exercise science, 2013-01, Vol.21 (2), p.167-173

2013

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Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation

Japanese Journal of Applied Physics, 2006-09, Vol.45 (9S), p.7351

2006

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Electrical Characterization Techniques of Dielectric Thin Films Using Metal–Insulator–Metal Structures

Japanese Journal of Applied Physics, 2007-10, Vol.46 (10S), p.6984

2007

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Effects of excess Pb and substrate on crystallization processes of amorphous Pb(Zr, Ti)O3 thin films prepared by RF magnetron sputtering

Japanese journal of applied physics, 1997, Vol.36 (9B), p.5793-5798

1997

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Low-Temperature Formation of High-Quality GeO2 Interlayer for High-κ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

IEEE transactions on electron devices, 2010, Vol.57 (1), p.282-287

2010

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Surface passivation of p -type Ge substrate with high-quality GeN x layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

Applied physics letters, 2011-09, Vol.99 (13), p.132907-132907-3

2011

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Effects of Excess Pb and Substrate on Crystallization Processes of Amorphous Pb(Zr, Ti)O 3 Thin Films Prepared by RF Magnetron Sputtering

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9S), p.5793

1997

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Surface passivation of p -type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

Applied physics letters, 2011-09, Vol.99 (13)

2011

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Preparation of -oriented lead-zirconate-titanate films by sol-gel technique

Japanese Journal of Applied Physics, 1993-09, Vol.32 (9B), p.4147-4149

1993

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Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor

Japanese journal of applied physics, 1996, Vol.35 (9B), p.5178-5180

1996

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Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation

Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition

Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge

Extensor indicis brevis Muscle: an Unusual Muscular Variant

Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique

Pulsed Shortwave Treatment in Women With Knee Osteoarthritis: A Multicenter, Randomized, Placebo-Controlled Clinical Trial

Kinesio taping effect on quadriceps strength and lower limb function of healthy individuals: A blinded, controlled, randomized, clinical trial

Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature

Pulsed Electromagnetic Field and Exercises in Patients With Shoulder Impingement Syndrome: A Randomized, Double-Blind, Placebo-Controlled Clinical Trial

Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

Low-Temperature Formation of High-Quality \hbox Interlayer for High- \kappa Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

Upper trapezius relaxation induced by TENS and interferential current in computer users with chronic nonspecific neck discomfort: An electromyographic analysis

Effects of Electron-Cyclotron-Resonance Oxygen Plasma Irradiation on Properties of Insulator/Ge-Semiconductor Interfaces Prior to Germanium Nitride Formation

Electrical Behavior of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Oxidation in Capacitance and Conductance Measurements

Comparison of peak torque, intensity and discomfort generated by neuromuscular electrical stimulation of low and medium frequency

Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation

Electrical Characterization Techniques of Dielectric Thin Films Using Metal–Insulator–Metal Structures

Effects of excess Pb and substrate on crystallization processes of amorphous Pb(Zr, Ti)O3 thin films prepared by RF magnetron sputtering

Low-Temperature Formation of High-Quality GeO2 Interlayer for High-κ Gate Dielectrics/Ge by Electron-Cyclotron-Resonance Plasma Techniques

Surface passivation of p -type Ge substrate with high-quality GeN x layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

Effects of Excess Pb and Substrate on Crystallization Processes of Amorphous Pb(Zr, Ti)O 3 Thin Films Prepared by RF Magnetron Sputtering

Surface passivation of p -type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

Preparation of -oriented lead-zirconate-titanate films by sol-gel technique

Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor

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