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Electronic structure of the surface unoccupied band of Ge(001)- c ( 4 × 2 ) : Direct imaging of surface electron relaxation pathways

Physical review. B, 2017-09, Vol.96 (11), Article 115301

2017

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Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Applied physics letters, 1995-05, Vol.66 (22), p.3024-3026

1995

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Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Applied physics letters, 1992-08, Vol.61 (5), p.557-559

1992

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Pharmacodynamic analysis of tacrolimus and cyclosporine in living-donor liver transplant patients

Clinical pharmacology and therapeutics, 2005-08, Vol.78 (2), p.168-181

2005

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Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

Applied physics letters, 1997-07, Vol.71 (2), p.258-260

1997

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A Si-based quantum-dot light-emitting diode

Applied physics letters, 2005-03, Vol.86 (10), p.103509-103509-3

2005

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Population pharmacokinetics of tacrolimus in adult recipients receiving living-donor liver transplantation

European journal of clinical pharmacology, 2001-09, Vol.57 (6-7), p.479-484

2001

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SiGe-on-insulator substrate using SiGe alloy grown Si(001)

Applied physics letters, 1999-08, Vol.75 (7), p.983-985

1999

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A single-chip two-wavelength switchable strained Si1-xGex/Si-quantum-well LED

Thin solid films, 2006-06, Vol.508 (1-2), p.410-413

2006

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A single-chip two-wavelength switchable strained Si1−Ge /Si-quantum-well LED

Thin solid films, 2006-06, Vol.508 (1-2), p.410-413

2006

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SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen

Applied physics letters, 1998-06, Vol.72 (26), p.3485-3487

1998

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Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE

Journal of crystal growth, 2007-04, Vol.301, p.718-721

2007

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Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component

2012 IEEE International Conference on IC Design & Technology, 2012, p.1-4

2012

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Diminished Shockley-Read-Hall recombination in near-surface pseudomorphic Si1-xGex/Si double quantum wells

Thin solid films, 2006-06, Vol.508 (1-2), p.414-417

2006

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Separation of NBTI component from channel hot carrier degradation in pMOSFETs focusing on recovery phenomenon

2011 IEEE International Conference on IC Design & Technology, 2011, p.1-4

2011

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Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

Applied physics letters, 1991-10, Vol.59 (17), p.2103-2105

1991

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Vitellogenin Facilitates Associations between the Whitefly and a Bacteriocyte Symbiont

mBio, 2023-02, Vol.14 (1), p.e0299022-e0299022

2023

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Influence of band alignment on recombination in pseudomorphic Si1−xGex∕Si quantum wells

Applied physics letters, 2005-01, Vol.86 (1)

2005

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Conversion of native lignin to a highly phenolic functional polymer and its separation from lignocellulosics

Biotechnology and bioengineering, 1995-06, Vol.46 (6), p.545-552

1995

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Time-resolved D-band luminescence in strain-relieved SiGe/Si

Applied physics letters, 1996-04, Vol.68 (14), p.1889-1891

1996

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Near-infrared gain in GaSb quantum dots in Si grown by MBE

Journal of crystal growth, 2005-05, Vol.278 (1), p.142-145

2005

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Highly efficient radiative recombination of electron–hole pairs localized at compound semiconductor quantum dots embedded in Si

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.354-357

2004

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Dynamical behavior in a shallow quantum confinement system

Thin solid films, 1997-02, Vol.294 (1), p.318-324

Fukatsu, S.

1997

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Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.390-393

2006

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MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

Journal of crystal growth, 1992-11, Vol.124 (1), p.439-442

1992

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Electronic structure of the surface unoccupied band of Ge(001)- c ( 4 × 2 ) : Direct imaging of surface electron relaxation pathways

Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Pharmacodynamic analysis of tacrolimus and cyclosporine in living-donor liver transplant patients

Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot

A Si-based quantum-dot light-emitting diode

Population pharmacokinetics of tacrolimus in adult recipients receiving living-donor liver transplantation

SiGe-on-insulator substrate using SiGe alloy grown Si(001)

A single-chip two-wavelength switchable strained Si1-xGex/Si-quantum-well LED

A single-chip two-wavelength switchable strained Si1−Ge /Si-quantum-well LED

SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen

Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE

Lifetime prediction of channel hot carrier degradation in pMOSFETs separating NBTI component

Diminished Shockley-Read-Hall recombination in near-surface pseudomorphic Si1-xGex/Si double quantum wells

Separation of NBTI component from channel hot carrier degradation in pMOSFETs focusing on recovery phenomenon

Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

Vitellogenin Facilitates Associations between the Whitefly and a Bacteriocyte Symbiont

Influence of band alignment on recombination in pseudomorphic Si1−xGex∕Si quantum wells

Conversion of native lignin to a highly phenolic functional polymer and its separation from lignocellulosics

Time-resolved D-band luminescence in strain-relieved SiGe/Si

Near-infrared gain in GaSb quantum dots in Si grown by MBE

Highly efficient radiative recombination of electron–hole pairs localized at compound semiconductor quantum dots embedded in Si

Dynamical behavior in a shallow quantum confinement system

Observation of Si emission during thermal oxidation of Si(001) with high-resolution RBS

MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

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