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Effects of step bunching on CuPt-B ordered structures in Ga0.5In0.5P grown by MOVPE

Applied surface science, 1998-06, Vol.130-132, p.469-474

1998

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High receiver sensitivity at 10 Gb/s using an Er-doped fiber preamplifier pumped with a 0.98 mu m laser diode

IEEE photonics technology letters, 1991-06, Vol.3 (6), p.551-553

1991

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High-power 1.02μm InGaAs/AlGaAs strained quantum well lasers with GaInP buried waveguides for pumping Pr3+-doped optical fibre amplifier

Electronics letters, 1993, Vol.29 (2), p.146-147

1993

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830 nm High-power low-noise self-aligned AlGaAs/GaAs double-quantum well lasers

Electronics letters, 1989-01, Vol.25 (20), p.1398-1399

1989

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Dynamical aspects of photo-induced phase transition in polydiacetylenes

Synthetic metals, 1989-02, Vol.28 (3), p.D605-D612

1989

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Effects of step bunching on CuPt-B ordered structures in Ga 0.5In 0.5P grown by MOVPE

Applied surface science, 1998, Vol.130, p.469-474

1998

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Step-bunching in (Al Ga1−)0.5In0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 1994-12, Vol.145 (1-4), p.126-132

1994

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COD-free high power (760 mW) 980 nm laser diodes with current-blocking facets

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092), 2000, p.25-26

2000

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High-power highly reliable 980-nm pump laser diodes

LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings, 1995, Vol.1, p.250-251 vol.1

1995

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Effects of step bunching on CuPt-B ordered structures in Ga0.5In0.5P grown by MOVPE

Applied surface science, 1998, Vol.130-32, p.469-474

1998

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Current Density Dependence for Dark-Line Defect Growth Velocity in Strained InGaAs / AlGaAs Quantum Well Laser Diodes

Japanese Journal of Applied Physics, 1991-03, Vol.30 (3A), p.L371

1991

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Step-bunching in (Al xGa 1− x) 0.5In 0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 1994, Vol.145 (1), p.126-132

1994

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0.98-1.02 mum strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides

IEEE journal of quantum electronics, 1993-06, Vol.29 (6), p.1936-1942

1993

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0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides

IEEE journal of quantum electronics, 1993-06, Vol.29 (6), p.1936-1942

1993

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0.98-0.02 μm strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides

IEEE journal of quantum electronics, 1993, Vol.29 (6), p.1936-1942

1993

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Current density dependent for dark-line defect growth velocity in strained InGaAs/AlGaAs quantum well laser diodes

Japanese journal of applied physics, 1991, Vol.30 (3A), p.L371-L373

1991

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High receiver sensitivity at 10 Gb/s using an Er-doped fiber preamplifier pumped with a 0.98 mum laser diode

IEEE photonics technology letters, 1991-06, Vol.3 (6), p.551-553

1991

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Sensitization of photochromism in polydiacetylene films by phthalocyanine layer

Japanese Journal of Applied Physics, 1990-06, Vol.29 (6), p.L977-L980

1990

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Step-bunching in (AlxGa1-x)0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 1994, Vol.145 (1-4), p.126-132

1994

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Highly reliable performance of 980-nm pump lasers predicted by optical over-stress life tests

Proceedings of Optical Fiber Communication Conference, 1997, p.353-354

1997

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High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE

Proceedings of IEEE 14th International Semiconductor Laser Conference, 1994, p.165-166

1994

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1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides

13th IEEE International Semiconductor Laser Conference, 1992, p.204-205

1992

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Wheel slip/Slide and low adhesion caused by fallen leaves

Wear, 2020-04, Vol.446-447, p.203187, Article 203187

2020

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Transitions in rolling-sliding wheel/rail contact condition during running-in

Tribology international, 2020-09, Vol.149, p.105679, Article 105679

2020

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In situ evaluation of contact stiffness in a slip interface with different roughness conditions using ultrasound reflectometry

Proceedings of the Royal Society. A, Mathematical, physical, and engineering sciences, 2021-11, Vol.477 (2255), p.20210442-20210442

2021

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Effects of step bunching on CuPt-B ordered structures in Ga0.5In0.5P grown by MOVPE

High receiver sensitivity at 10 Gb/s using an Er-doped fiber preamplifier pumped with a 0.98 mu m laser diode

High-power 1.02μm InGaAs/AlGaAs strained quantum well lasers with GaInP buried waveguides for pumping Pr3+-doped optical fibre amplifier

830 nm High-power low-noise self-aligned AlGaAs/GaAs double-quantum well lasers

Dynamical aspects of photo-induced phase transition in polydiacetylenes

Effects of step bunching on CuPt-B ordered structures in Ga 0.5In 0.5P grown by MOVPE

Step-bunching in (Al Ga1−)0.5In0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy

COD-free high power (760 mW) 980 nm laser diodes with current-blocking facets

High-power highly reliable 980-nm pump laser diodes

Effects of step bunching on CuPt-B ordered structures in Ga0.5In0.5P grown by MOVPE

Current Density Dependence for Dark-Line Defect Growth Velocity in Strained InGaAs / AlGaAs Quantum Well Laser Diodes

Step-bunching in (Al xGa 1− x) 0.5In 0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy

0.98-1.02 mum strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides

0.98-1.02 mu m strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides

0.98-0.02 μm strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides

Current density dependent for dark-line defect growth velocity in strained InGaAs/AlGaAs quantum well laser diodes

High receiver sensitivity at 10 Gb/s using an Er-doped fiber preamplifier pumped with a 0.98 mum laser diode

Sensitization of photochromism in polydiacetylene films by phthalocyanine layer

Step-bunching in (AlxGa1-x)0.5P layers on misoriented (001) GaAs substrates grown by metalorganic vapor phase epitaxy

Highly reliable performance of 980-nm pump lasers predicted by optical over-stress life tests

High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-/spl mu/m InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE

1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides

Wheel slip/Slide and low adhesion caused by fallen leaves

Transitions in rolling-sliding wheel/rail contact condition during running-in

In situ evaluation of contact stiffness in a slip interface with different roughness conditions using ultrasound reflectometry

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