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The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

Journal of applied physics, 2014-12, Vol.116 (21)

2014

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Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

Journal of applied physics, 2012-05, Vol.111 (10)

2012

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Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes

Applied physics letters, 2010-06, Vol.96 (23), p.231113-231113-3

2010

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Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Applied physics letters, 2012-11, Vol.101 (21)

2012

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Determination of internal parameters for AlGaN-cladding-free m -plane InGaN/GaN laser diodes

Applied physics letters, 2011-10, Vol.99 (17), p.171115-171115-3

2011

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Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

Journal of applied physics, 2011-02, Vol.109 (3), p.033505-033505-7

2011

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Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Journal of crystal growth, 2013-11, Vol.382, p.80-86

2013

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Formation and reduction of pyramidal hillocks on m -plane { 1 1 ¯ 00 } GaN

Applied physics letters, 2007-11, Vol.91 (19), p.191906-191906-3

2007

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Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

Applied physics letters, 2013-07, Vol.103 (5)

2013

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Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

Journal of crystal growth, 2010-12, Vol.313 (1), p.1-7

2010

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Origin of pyramidal hillocks on GaN thin films grown on free-standing m -plane GaN substrates

Applied physics letters, 2010-06, Vol.96 (23), p.231907-231907-3

2010

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Defect reduction in (112̄0) a -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

Applied physics letters, 2003-07, Vol.83 (4), p.644-646

2003

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High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes

Applied physics letters, 2011-10, Vol.99 (17), p.171113-171113-3

2011

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Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m -plane GaN substrates

Journal of applied physics, 2013-02, Vol.113 (6)

2013

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Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Semiconductor science and technology, 2012-02, Vol.27 (2), p.024008

2012

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Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate

Electronics letters, 2007, Vol.43 (15), p.825-827

2007

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PCV56 COST-MINIMIZATION ANALYSIS OF LANDIOLOL FOR CT SCANNING FOR CVD SUSPICIOUS PATIENTS IN JAPAN

Value in health, 2011, Vol.14 (3), p.A42-A42

2011

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Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1−xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy

Applied physics letters, 2009-02, Vol.94 (7)

2009

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Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method

Applied physics letters, 2007-12, Vol.91 (25), p.251911-251911-3

2007

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In-plane and out-of-plane ferroelectric instabilities in epitaxial SrTiO3 films

Physical review letters, 2006-04, Vol.96 (15), p.157602-157602

2006

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Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

MRS bulletin, 2009-05, Vol.34 (5), p.313-317

2009

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High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al{sub 1−x}In{sub x}N epilayers grown on a low defect density m-plane freestanding GaN substrate

Journal of applied physics, 2014-12, Vol.116 (21)

2014

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High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m -plane Al1− x In x N epilayers grown on a low defect density m -plane freestanding GaN substrate

Journal of applied physics, 2014-12, Vol.116 (21)

2014

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Increasing acceptable number of signals in subcarrier multiple access optical networks in the presence of high optical beat interference

Journal of lightwave technology, 1999-09, Vol.17 (9), p.1525-1531

1999

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The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

Low-threshold-current-density AlGaN-cladding-free m -plane InGaN/GaN laser diodes

Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Determination of internal parameters for AlGaN-cladding-free m -plane InGaN/GaN laser diodes

Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

Formation and reduction of pyramidal hillocks on m -plane { 1 1 ¯ 00 } GaN

Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun

Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

Origin of pyramidal hillocks on GaN thin films grown on free-standing m -plane GaN substrates

Defect reduction in (112̄0) a -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes

Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m -plane GaN substrates

Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate

PCV56 COST-MINIMIZATION ANALYSIS OF LANDIOLOL FOR CT SCANNING FOR CVD SUSPICIOUS PATIENTS IN JAPAN

Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1−xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy

Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method

In-plane and out-of-plane ferroelectric instabilities in epitaxial SrTiO3 films

Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al{sub 1−x}In{sub x}N epilayers grown on a low defect density m-plane freestanding GaN substrate

High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m -plane Al1− x In x N epilayers grown on a low defect density m -plane freestanding GaN substrate

Increasing acceptable number of signals in subcarrier multiple access optical networks in the presence of high optical beat interference

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