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Inauguration Address from the New President of JACG

Journal of the Japanese Association for Crystal Growth, 2022, Vol.49(1), pp.01_49-1

Fujioka, Hiroshi

2022

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Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

Applied physics letters, 2020-12, Vol.117 (23)

2020

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Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates

Journal of crystal growth, 2021-10, Vol.572, p.126269, Article 126269

2021

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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Scientific reports, 2019-12, Vol.9 (1), p.20242-5, Article 20242

2019

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Reduction of Twin Boundary in NbN Films Grown on Annealed AlN

Crystal growth & design, 2022-03, Vol.22 (3), p.1720-1723

2022

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Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

Scientific reports, 2014-06, Vol.4 (1), p.5325-5325, Article 5325

2014

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Electrical properties of Si-doped GaN prepared using pulsed sputtering

Applied physics letters, 2017-01, Vol.110 (4)

2017

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Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Applied physics letters, 2021-02, Vol.118 (7)

2021

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Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

Crystals (Basel), 2022-04, Vol.12 (4), p.499

2022

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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

APL materials, 2016-08, Vol.4 (8), p.86103-086103-5

2016

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Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Applied physics letters, 2020-11, Vol.117 (19)

2020

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Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

Scientific reports, 2017-10, Vol.7 (1), p.12820-6, Article 12820

2017

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Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Social support needs of caregivers rearing children with severe motor and intellectual disabilities at home in Japan

Frontiers in rehabilitation sciences, 2024, Vol.5, p.1280278-1280278

2024

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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

PloS one, 2021-10, Vol.16 (10)

2021

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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

PloS one, 2021-10, Vol.16 (10), p.e0258647-e0258647

2021

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Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

physica status solidi (b), 2018-03, Vol.255 (3), p.n/a

2018

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Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

AIP advances, 2019-07, Vol.9 (7), p.075123-075123-5

2019

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Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

Scientific reports, 2017-05, Vol.7 (1), p.2112-5, Article 2112

2017

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Field-effect transistors based on cubic indium nitride

Scientific reports, 2014-02, Vol.4 (1), p.3951-3951, Article 3951

2014

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High-current-density indium nitride ultrathin-film transistors on glass substrates

Applied physics letters, 2016-10, Vol.109 (14)

2016

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Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

APL materials, 2017-07, Vol.5 (7), p.076107-076107-5

2017

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ICCGE-20 / ISSCG-18

Journal of the Japanese Association for Crystal Growth, 2023, Vol.50(3), pp.50-3-08

2023

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Crystal‐Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide‐Bandgap AlN Semiconductors

Advanced materials interfaces, 2022-11, Vol.9 (31), p.n/a

2022

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Proposal of oxide-formed two-step wet etching process for n-GaN

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD18

2019

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Inauguration Address from the New President of JACG

Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates

Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Reduction of Twin Boundary in NbN Films Grown on Annealed AlN

Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

Social support needs of caregivers rearing children with severe motor and intellectual disabilities at home in Japan

Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

Field-effect transistors based on cubic indium nitride

High-current-density indium nitride ultrathin-film transistors on glass substrates

Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

ICCGE-20 / ISSCG-18

Crystal‐Phase Controlled Epitaxial Growth of NbNx Superconductors on Wide‐Bandgap AlN Semiconductors

Proposal of oxide-formed two-step wet etching process for n-GaN

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