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High reliability InGaP/GaAs HBT

IEEE electron device letters, 1998-04, Vol.19 (4), p.115-117

1998

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Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD

Journal of electronic materials, 1992-12, Vol.21 (12), p.1111-1118

1992

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High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors

IEEE electron device letters, 1995-12, Vol.16 (12), p.540-541

1995

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Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics

Applied physics letters, 1996-02, Vol.68 (7), p.982-984

1996

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Selective self-aligned emitter ledge formation for heterojunction bipolar transistors

IEEE electron device letters, 1996-12, Vol.17 (12), p.555-556

1996

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InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer

IEEE electron device letters, 1997-11, Vol.18 (11), p.559-561

1997

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High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

Journal of electronic materials, 1996-10, Vol.25 (10), p.1637-1639

1996

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A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs

Journal of electronic materials, 1994-08, Vol.23 (8), p.791-799

1994

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A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCl4-doped InGaAs

Journal of electronic materials, 1994-08, Vol.23 (8), p.791-799

1994

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Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition

Applied physics letters, 1997-04, Vol.70 (14), p.1822-1824

1997

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InP/InGaAs HBTs with n+-InP contacting layers grown by MOMBE using SiBr4

Electronics letters, 1994-12, Vol.30 (25), p.2177-2178

1994

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Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

Journal of applied physics, 1994-04, Vol.75 (8), p.4233-4236

1994

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Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.511-514

1997

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Carbon incorporation in InP grown by metallorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

Journal of applied physics, 1994-01, Vol.75 (8), p.4233-4236

1994

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High-Speed InP/InGaAs Heterojunction Bipolar Transistor Utilizing Nonalloyed Contacts on nsup +-InP Contacting Layers

Journal of electronic materials, 1996-10, Vol.25 (10), p.1637-1639

1996

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High-Speed InP/InGaAs Heterojunction Bipolar Transistor Utilizing Nonalloyed Contacts on n^sup +^-InP Contacting Layers

Journal of electronic materials, 1996-10, Vol.25 (10), p.1637

1996

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High-speed InGaP/GaAs HBTs with a strained In(x)Ga(1-x)As base

IEEE electron device letters, 1996-05, Vol.17 (5), p.226-228

1996

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InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication

International Electron Devices Meeting. Technical Digest, 1996, p.207-210

1996

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High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

Journal of electronic materials, 1996-10, Vol.25 (10), p.1637-1639

1996

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Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

1997 IEEE MTT-S International Microwave Symposium Digest, 1997, Vol.1, p.255-258 vol.1

1997

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High-efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide

Applied physics letters, 1994-05, Vol.64 (21), p.2867-2869

1994

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Comparison of TMGa and TEGa for low-temperature metallorganic chemical vapor deposition growth of CCl sub 4 -doped InGaAs

Journal of electronic materials, 1994-01, Vol.23 (8), p.791-799

1994

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Analysis of the offset voltage of InGaP/GaAs single-, double-, and composite double-heterojunction bipolar transistors

Journal of applied physics, 1995-05, Vol.77 (10), p.5437-5439

1995

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Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.505-508

1997

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Ocular surface analysis in hematological patients before and after allogeneic hematopoietic stem cell transplantation: implication for daily clinical practice

Eye (London), 2017-10, Vol.31 (10), p.1417-1426

2017

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High reliability InGaP/GaAs HBT

Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD

High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors

Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics

Selective self-aligned emitter ledge formation for heterojunction bipolar transistors

InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer

High-speed InP/InGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs

A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCl4-doped InGaAs

Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition

InP/InGaAs HBTs with n+-InP contacting layers grown by MOMBE using SiBr4

Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

Carbon incorporation in InP grown by metallorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

High-Speed InP/InGaAs Heterojunction Bipolar Transistor Utilizing Nonalloyed Contacts on nsup +-InP Contacting Layers

High-Speed InP/InGaAs Heterojunction Bipolar Transistor Utilizing Nonalloyed Contacts on n^sup +^-InP Contacting Layers

High-speed InGaP/GaAs HBTs with a strained In(x)Ga(1-x)As base

InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication

High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide

High-efficiency silicon doping of InP and In0.53Ga0.47As in gas source and metalorganic molecular beam epitaxy using silicon tetrabromide

Comparison of TMGa and TEGa for low-temperature metallorganic chemical vapor deposition growth of CCl sub 4 -doped InGaAs

Analysis of the offset voltage of InGaP/GaAs single-, double-, and composite double-heterojunction bipolar transistors

Effects of annealing on the performance of InP/lnGaAs HBTs grown by LP-MOCVD

Ocular surface analysis in hematological patients before and after allogeneic hematopoietic stem cell transplantation: implication for daily clinical practice

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