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Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Applied surface science, 2015-11, Vol.355 (C), p.792-799

2015

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CH4/H2 : a universal reactive ion etch for II-VI semiconductors ?

Applied physics letters, 1992-05, Vol.60 (20), p.2531-2533

1992

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Model for conductance in dry-etch damaged n-GaAs structures

Applied physics letters, 1992-11, Vol.61 (19), p.2335-2337

1992

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Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen

Electronics letters, 1991-01, Vol.27 (1), p.73-75

1991

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Optimization of advanced PMOS junctions using Ge, B and F co-implants

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.237 (1-2), p.46-52

2005

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Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4

Semiconductor science and technology, 1992-09, Vol.7 (9), p.1189-1198

1992

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High-resolution dry etching of zinc telluride: characterization of etched surfaces by X-ray photoelectron spectroscopy, photoluminescence and Raman scattering

Semiconductor science and technology, 1991-09, Vol.6 (9A), p.A115-A122

1991

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90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.237 (1-2), p.53-57

2005

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Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.237 (1-2), p.336-340

2005

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Integration of Advanced Source and Drain Extension Process Using Carbon/Fluorine Co-Implants and Spike Anneal in 65nm PMOS Devices

Ion Implantation Technology, 2006, Vol.866, p.46-49

2006

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Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization

Journal of electronic materials, 1994-03, Vol.23 (3), p.289-298

1994

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Deactivation of low energy Boron Implants into Pre-amorphised Si after Non-Melt Laser Annealing with Multiple Scans

Ion Implantation Technology, 2006, Vol.866, p.33-36

2006

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Elemental B distributions and clustering in low-energy B+ ion-implanted Si

Applied physics letters, 2000-11, Vol.77 (22), p.3586-3588

2000

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Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon

MRS proceedings, 1997, Vol.469, Article 59

1997

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Optical assessment of reactive ion etched ZnTe and ZnSe for nanostructures

Surface science, 1992, Vol.267 (1), p.223-226

1992

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Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Applied physics letters, 2006-11, Vol.89 (19)

2006

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Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

MRS proceedings, 2004, Vol.810, Article C5.8

2004

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The production and use of ultralow energy ion beams

Review of Scientific Instruments, 2000-02, Vol.71 (2), p.1032-1035

2000

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Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

Applied physics letters, 2006-12, Vol.89 (24)

2006

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Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs

Journal of applied physics, 1992-04, Vol.71 (8), p.3754-3759

1992

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Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing

Applied physics letters, 2008-02, Vol.92 (8), p.082109-082109-3

2008

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An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-12, Vol.253 (1-2), p.9-12

2006

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Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants

Applied physics letters, 2005-08, Vol.87 (5), p.051908-051908-3

2005

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Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study

Physical review letters, 1999-11, Vol.83 (21), p.4341-4344

1999

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Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

MRS proceedings, 1999, Vol.568, Article 55

1999

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Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

CH4/H2 : a universal reactive ion etch for II-VI semiconductors ?

Model for conductance in dry-etch damaged n-GaAs structures

Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen

Optimization of advanced PMOS junctions using Ge, B and F co-implants

Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4

High-resolution dry etching of zinc telluride: characterization of etched surfaces by X-ray photoelectron spectroscopy, photoluminescence and Raman scattering

90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants

Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants

Integration of Advanced Source and Drain Extension Process Using Carbon/Fluorine Co-Implants and Spike Anneal in 65nm PMOS Devices

Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization

Deactivation of low energy Boron Implants into Pre-amorphised Si after Non-Melt Laser Annealing with Multiple Scans

Elemental B distributions and clustering in low-energy B+ ion-implanted Si

Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon

Optical assessment of reactive ion etched ZnTe and ZnSe for nanostructures

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

The production and use of ultralow energy ion beams

Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs

Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing

An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing

Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants

Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study

Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

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