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In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(111):H and GaAs(001) and corrosion of Cu3Au(111)

Surface science, 2004-12, Vol.573 (1), p.67-79

2004

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In situ electronic probing of semiconducting nanowires in an electron microscope

Journal of microscopy (Oxford), 2016-05, Vol.262 (2), p.183-188

2016

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InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Journal of crystal growth, 2011-05, Vol.323 (1), p.223-227

2011

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Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.532-536

2013

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Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

Journal of crystal growth, 2009-03, Vol.311 (7), p.1847-1850

2009

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Critical thickness of MBE-grown Ga 1− x In x Sb ( x<0.2) on GaSb

Journal of crystal growth, 2009, Vol.311 (7), p.1688-1691

2009

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Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb

Journal of crystal growth, 2009-03, Vol.311 (7), p.1688-1691

2009

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Optical anisotropy of cyclopentene terminated GaAs(001) surfaces

Applied physics. A, Materials science & processing, 2007-06, Vol.87 (3), p.469-473

2007

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The electrodeposition of copper onto UHV-prepared GaAs(0 0 1) surfaces

Surface science, 2009-09, Vol.603 (17), p.L105-L108

2009

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Semiconductor quantum-wires and nano-wires for optoelectronic applications

Journal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.94-101

2009

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Calibration of the arsenic mole fraction in MBE grown GaAsySb1−y and AlxGa1−xAsySb1−y (y<0.2)

Journal of crystal growth, 2001-07, Vol.227-228, p.562-565

2001

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In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(1 1 1):H and GaAs(0 0 1) and corrosion of Cu 3Au(1 1 1)

Surface science, 2004, Vol.573 (1), p.67-79

2004

Volltextzugriff (PDF)

Calibration of the arsenic mole fraction in MBE grown GaAs ySb 1− y and Al xGa 1− xAs ySb 1− y ( y<0.2)

Journal of crystal growth, 2001, Vol.227, p.562-565

2001

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Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer

Surface science, 1996-05, Vol.352, p.71-76

1996

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Adsorption of [( tBu)GaS] 4 on the GaAs(0 0 1)-(4×2) surface

Surface science, 2000-12, Vol.470 (1), p.L81-L87

2000

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Adsorption of [( tBu)GaS] 4 on GaAs(001)-(2×4)

Surface science, 1999-05, Vol.426 (2), p.163-172

1999

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Surface reflectance anisotropy of indium-terminated GaAs(100) surfaces

Surface science, 1997-04, Vol.377, p.404-408

1997

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Surfactant-mediated growth of indium on GaAs(001)

Surface science, 1997-04, Vol.377, p.953-957

1997

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Growth of diamond-like films at room temperature on Si and III-V materials

Conference on Lasers and Electro-Optics, 2004. (CLEO), 2004, Vol.2, p.3 pp. vol.2

2004

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Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells

Materials science forum, 1993-01, Vol.117-118, p.333-338

1993

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Optical Studies of free and Acceptor-Bound Excitons in GaAs/AlGaAs Symmetric Coupled Double Quantum Well Structures

MRS proceedings, 1993, Vol.326, Article 383

1993

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Proton NMR one-phonon and two-phonon relaxation due to tunneling in ammonium hexachlorides

Physica B + C, 1985, Vol.128 (2), p.144-160

1985

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Reorientations in [Mg(H 2O) 6](ClO 4) 2 studied with proton magnetic resonance and quasielastic neutron scattering

Physica B + C, 1981-07, Vol.106 (2), p.195-199

1981

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Calometry, proton magnetic resonance and quasielastic neutron scattering studies of [Mg(NH 3) 6] (NO 3) 2

Physica B + C, 1983, Vol.122 (3), p.315-320

1983

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In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(111):H and GaAs(001) and corrosion of Cu3Au(111)

In situ electronic probing of semiconducting nanowires in an electron microscope

InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

Critical thickness of MBE-grown Ga 1− x In x Sb ( x<0.2) on GaSb

Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb

Optical anisotropy of cyclopentene terminated GaAs(001) surfaces

The electrodeposition of copper onto UHV-prepared GaAs(0 0 1) surfaces

Semiconductor quantum-wires and nano-wires for optoelectronic applications

Calibration of the arsenic mole fraction in MBE grown GaAsySb1−y and AlxGa1−xAsySb1−y (y<0.2)

In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(1 1 1):H and GaAs(0 0 1) and corrosion of Cu 3Au(1 1 1)

Calibration of the arsenic mole fraction in MBE grown GaAs ySb 1− y and Al xGa 1− xAs ySb 1− y ( y<0.2)

Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer

Adsorption of [( tBu)GaS] 4 on the GaAs(0 0 1)-(4×2) surface

Adsorption of [( tBu)GaS] 4 on GaAs(001)-(2×4)

Surface reflectance anisotropy of indium-terminated GaAs(100) surfaces

Surfactant-mediated growth of indium on GaAs(001)

Growth of diamond-like films at room temperature on Si and III-V materials

Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells

Optical Studies of free and Acceptor-Bound Excitons in GaAs/AlGaAs Symmetric Coupled Double Quantum Well Structures

Proton NMR one-phonon and two-phonon relaxation due to tunneling in ammonium hexachlorides

Reorientations in [Mg(H 2O) 6](ClO 4) 2 studied with proton magnetic resonance and quasielastic neutron scattering

Calometry, proton magnetic resonance and quasielastic neutron scattering studies of [Mg(NH 3) 6] (NO 3) 2

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