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Polarization fields of III-nitrides grown in different crystal orientations

Journal of physics. Condensed matter, 2007-10, Vol.19 (40), p.403201-403201 (26)

2007

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Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP advances, 2021-07, Vol.11 (7), p.075013-075013-6

2021

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Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

Journal of the Electrochemical Society, 2011, Vol.158 (5), p.H530

2011

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Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Applied physics letters, 2016-11, Vol.109 (22)

2016

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Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

Applied physics letters, 2016-05, Vol.108 (22)

2016

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Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells

physica status solidi (b), 2015-05, Vol.252 (5), p.873-878

2015

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Composition dependent valence band order in c-oriented wurtzite AlGaN layers

Journal of applied physics, 2014-09, Vol.116 (11)

2014

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Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Applied physics letters, 2013-09, Vol.103 (12)

2013

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Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes

Journal of applied physics, 2011-07, Vol.110 (1), p.013520-013520-8

2011

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Three-dimensional GaN for semipolar light emitters

Physica Status Solidi (b), 2011-03, Vol.248 (3), p.549-560

2011

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Electrical transport properties of Ge-doped GaN nanowires

Nanotechnology, 2015-03, Vol.26 (13), p.135704-135704

2015

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Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN

Journal of applied physics, 2015-12, Vol.118 (21)

2015

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Influence of strain on the band gap energy of wurtzite InN

Physica Status Solidi (b), 2009-06, Vol.246 (6), p.1177-1180

2009

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Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering

Applied physics letters, 2009-07, Vol.95 (3), p.031903-031903-3

2009

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Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1180-1188

2015

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Optimization of nucleation and buffer layer growth for improved GaN quality

Journal of crystal growth, 2007-10, Vol.308 (1), p.30-36

2007

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Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Semiconductor science and technology, 2015-08, Vol.30 (8), p.85014

2015

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Reliable polarization control of VCSELs through monolithically integrated surface gratings: a comparative theoretical and experimental study

IEEE journal of selected topics in quantum electronics, 2005-01, Vol.11 (1), p.107-116

2005

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Quaternary AlxInyGa1―x―yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

Journal of crystal growth, 2011-01, Vol.315 (1), p.254-257

2011

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Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets

Applied physics letters, 2006-12, Vol.89 (24)

2006

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The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures

Physica status solidi. B. Basic research, 2010-06, Vol.247 (6), p.1464-1468

2010

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Droplet epitaxy of zinc-blende GaN quantum dots

Journal of crystal growth, 2010-10, Vol.312 (21), p.3235-3237

2010

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Dielectric function of cubic InN from the mid-infrared to the visible spectral range

Semiconductor science and technology, 2008-05, Vol.23 (5), p.055001

2008

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Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation

Journal of crystal growth, 2011-05, Vol.323 (1), p.286-289

2011

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Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate

Journal of applied physics, 2007-01, Vol.101 (2), p.023511-023511-5

2007

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Polarization fields of III-nitrides grown in different crystal orientations

Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO

Structural and optical properties of MBE-grown asymmetric cubic GaN/AlxGa1-xN double quantum wells

Composition dependent valence band order in c-oriented wurtzite AlGaN layers

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes

Three-dimensional GaN for semipolar light emitters

Electrical transport properties of Ge-doped GaN nanowires

Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN

Influence of strain on the band gap energy of wurtzite InN

Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering

Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN

Optimization of nucleation and buffer layer growth for improved GaN quality

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Reliable polarization control of VCSELs through monolithically integrated surface gratings: a comparative theoretical and experimental study

Quaternary AlxInyGa1―x―yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets

The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures

Droplet epitaxy of zinc-blende GaN quantum dots

Dielectric function of cubic InN from the mid-infrared to the visible spectral range

Zinc-blende GaN quantum dots grown by vapor–liquid–solid condensation

Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate

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