UB Paderborn / Katalog / Suche / in CDI

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.507-509

2006

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Plasma immersion ion implantation of SiF4 and BF3 for sub-100 nm P +/ N junction fabrication

Applied physics letters, 1991-07, Vol.59 (3), p.348-350

1991

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Ultra-Shallow Junctions Formed By Sub-Melt Laser Annealing

Ion Implantation Technology, 2006, Vol.866, p.129-132

2006

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Gate Dielectric Damage Due To High-Tilt Implant

Ion Implantation Technology, 2006, Vol.866, p.516-519

2006

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90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.237 (1-2), p.53-57

2005

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Suppression of phosphorus diffusion by carbon co-implantation

Applied physics letters, 2006-08, Vol.89 (6), p.062102-062102-3

2006

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Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas

Materials chemistry and physics, 1998-07, Vol.54 (1-3), p.37-43

1998

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Device dependence of charging effects from high-current ion implantation

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2338-2342

1988

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Evaluation of charging damage test structures for ion implantation processes

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1999-07, Vol.17 (4), p.1501-1509

1999

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Different Profile Responses to Dose Variation for B{sub 2}H{sub 6} and BF{sub 3} Plasma Doping using PULSION registered

AIP conference proceedings, 2011-01, Vol.1321 (1)

2011

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Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.281-285

2008

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Determination of the cooper-pair mass in niobium

Physical review. B, Condensed matter, 1990-11, Vol.42 (13A), p.7885-7893

1990

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Effect of amorphization and carbon co-doping on activation and diffusionof boron in silicon

Applied physics letters, 2006-08, Vol.89 (6), p.062110-062110-3

2006

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Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

2008 Symposium on VLSI Technology, 2008, p.186-187

2008

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IEEE_Xplore

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Plasma doping for the fabrication of ultra-shallow junctions

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Advanced front-end processes for the 45 nm CMOS technology node

PULSION registered HP: Tunable, High Productivity Plasma Doping

Plasma doping for shallow junctions

Precise determination of the cooper-pair mass

Photon Influence on P and B Diffusion

Physical and Electrical Characterization of 120 nm Technology Node Devices using PULSION registered Plasma Doping

Boron doping of silicon by plasma source ion implantation

Optimization of pre-amorphization and dopant implant conditions for advanced annealing

Profiling of ultrashallow junctions

Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation

Plasma immersion ion implantation of SiF4 and BF3 for sub-100 nm P +/ N junction fabrication

Ultra-Shallow Junctions Formed By Sub-Melt Laser Annealing

Gate Dielectric Damage Due To High-Tilt Implant

90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants

Suppression of phosphorus diffusion by carbon co-implantation

Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas

Device dependence of charging effects from high-current ion implantation

Evaluation of charging damage test structures for ion implantation processes

Different Profile Responses to Dose Variation for B{sub 2}H{sub 6} and BF{sub 3} Plasma Doping using PULSION registered

Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

Determination of the cooper-pair mass in niobium

Effect of amorphization and carbon co-doping on activation and diffusionof boron in silicon

Laser-annealed junctions with advanced CMOS gate stacks for 32nm Node: Perspectives on device performance and manufacturability

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