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Optimization of scandium oxide growth by high pressure sputtering on silicon

Thin solid films, 2012-12, Vol.526, p.81-86

2012

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Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics

Semiconductor science and technology, 2013-08, Vol.28 (8), p.85004

2013

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Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

Microelectronic engineering, 2011-09, Vol.88 (9), p.2991-2996

2011

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Positive bias temperature instabilities on sub-nanometer EOT FinFETs

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1521-1524

2011

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Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

Thin solid films, 2011-01, Vol.519 (7), p.2268-2272

2011

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Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Thin solid films, 2015-10, Vol.593, p.62-66

2015

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High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

Semiconductor science and technology, 2017-03, Vol.32 (3), p.35016

2017

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Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

Semiconductor science and technology, 2015-03, Vol.30 (3)

2015

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Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

Microelectronic engineering, 2011-07, Vol.88 (7), p.1357-1360

2011

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Scavenging effect on plasma oxidized Gd 2 O 3 grown by high pressure sputtering on Si and InP substrates

Semiconductor science and technology, 2015-03, Vol.30 (3), p.35023

2015

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Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

Microelectronic engineering, 2013-09, Vol.109, p.236-239

2013

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Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Journal of applied physics, 2010-04, Vol.107 (8), p.084505-084505-6

2010

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High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

Microelectronic engineering, 2013-09, Vol.109, p.223-226

2013

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Nitridation of Si by N[sub 2] Electron Cyclotron Resonance Plasma and Integration with ScO[sub x] Deposition

Journal of the Electrochemical Society, 2010, Vol.157 (4), p.H430

2010

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Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

Thin solid films, 2011-01, Vol.519 (7), p.2268-2272

2011

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Towards metal electrode interface scavenging of rare-earth scandates: A Sc sub(2O) sub(3) and Gd sub(2O) sub(3) study

Microelectronic engineering, 2011-07, Vol.88 (7), p.1357-1360

2011

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Gadolinium scandate by high pressure sputtering as a high-k dielectric

2013 Spanish Conference on Electron Devices, 2013, p.17-20

2013

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Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide

2013 Spanish Conference on Electron Devices, 2013, p.25-28

2013

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Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

2013 Spanish Conference on Electron Devices, 2013, p.285-288

2013

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Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric

2013 Spanish Conference on Electron Devices, 2013, p.5-8

2013

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Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 2011, p.1-3

2011

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Interface engineering by metal electrode scavenging of Gd2O3 films sputtered on Si

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 2011, p.1-4

2011

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Growth of Silicon Nitride on Silicon by Electron Cyclotron Resonance Plasma Nitridation

2009 Spanish Conference on Electron Devices, 2009, p.16-18

2009

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Interfacial Properties of HfO2/ SiN/Si Gate Structures

2009 Spanish Conference on Electron Devices, 2009, p.23-26

2009

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Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

IEEE transactions on device and materials reliability, 2012-03, Vol.12 (1), p.166-170

2012

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Optimization of scandium oxide growth by high pressure sputtering on silicon

Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics

Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

Positive bias temperature instabilities on sub-nanometer EOT FinFETs

Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

High-k gadolinium scandate on Si obtained by high pressure sputtering from metal targets and in-situ plasma oxidation

Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

Scavenging effect on plasma oxidized Gd 2 O 3 grown by high pressure sputtering on Si and InP substrates

Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

Nitridation of Si by N[sub 2] Electron Cyclotron Resonance Plasma and Integration with ScO[sub x] Deposition

Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

Towards metal electrode interface scavenging of rare-earth scandates: A Sc sub(2O) sub(3) and Gd sub(2O) sub(3) study

Gadolinium scandate by high pressure sputtering as a high-k dielectric

Towards high-k integration with III-V channels: Interface optimization of high pressure sputtered gadolinium oxide on indium phospide

Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

Plasma oxidation of metallic gadolinium deposited on silicon by high pressure sputtering as high permittivity dielectric

Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

Interface engineering by metal electrode scavenging of Gd2O3 films sputtered on Si

Growth of Silicon Nitride on Silicon by Electron Cyclotron Resonance Plasma Nitridation

Interfacial Properties of HfO2/ SiN/Si Gate Structures

Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

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