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Visible luminescence from silicon wafers subjected to stain etches

Applied physics letters, 1992-02, Vol.60 (8), p.995-997

1992

Volltextzugriff (PDF)

Electronic structure of light-emitting porous Si

Applied physics letters, 1992-02, Vol.60 (8), p.1004-1006

1992

Volltextzugriff (PDF)

Microstructural investigations of light-emitting porous Si layers

Applied physics letters, 1992-05, Vol.60 (19, M), p.2359-2361

1992

Volltextzugriff (PDF)

Endotaxial growth of CoSi2 within (111) oriented Si in a molecular beam epitaxy system

Applied physics letters, 1991-12, Vol.59 (25), p.3249-3251

1991

Volltextzugriff (PDF)

A survey of recent mathematical art exhibitions

Journal of mathematics and the arts, 2007-09, Vol.1 (3), p.181-190

Fathauer, R. W.

2007

Volltextzugriff (PDF)

Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

Applied physics letters, 1993-06, Vol.62 (25), p.3318-3320

1993

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Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor

Applied physics letters, 1990-10, Vol.57 (14), p.1419-1421

1990

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Epitaxial growth and characterization of CaF2 on Si

Journal of applied physics, 1985-07, Vol.58 (1), p.302-308

1985

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Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling

Applied physics letters, 1985-11, Vol.47 (10), p.1071-1073

1985

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Surface morphology of epitaxial CaF2 films on Si substrates

Applied physics letters, 1984-09, Vol.45 (5), p.519-521

1984

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Molecular beam epitaxy growth and applications of epitaxial fluoride films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1986-05, Vol.4 (3), p.1026-1032

1986

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Fractal tilings based on kite- and dart-shaped prototiles

Computers & graphics, 2001-04, Vol.25 (2), p.323-331, Article 323

Fathauer, Robert W.

2001

Volltextzugriff (PDF)

Infrared photodetectors with tailorable response due to resonant plasmon absorption in epitaxial silicide particles embedded in silicon

Applied physics letters, 1993-04, Vol.62 (15), p.1774-1776

1993

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Visible photoluminescence of porous Si1-xGex obtained by stain etching

Applied physics letters, 1993-07, Vol.63 (2), p.200-202

1993

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Co diffusion and growth of buried single-crystal CoSi2 in Si(111) by endotaxy

Journal of applied physics, 1992-09, Vol.72 (5), p.1874-1878

1992

Volltextzugriff (PDF)

Growth parameters affecting the formation of buried CoSi2 by endotaxy of Co on Si(111)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1992-07, Vol.10 (4), p.2404-2406

1992

Volltextzugriff (PDF)

Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

Applied physics letters, 1989-07, Vol.55 (3), p.247-249

1989

Volltextzugriff (PDF)

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

Applied physics letters, 1989-08, Vol.55 (8), p.795-797

1989

Volltextzugriff (PDF)

Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)

Applied physics letters, 1988-03, Vol.52 (10), p.804-806

1988

Volltextzugriff (PDF)

Optical properties of epitaxial CoSi2 and NiSi2 films on silicon

Journal of applied physics, 1989-09, Vol.66 (6), p.2738-2741

1989

Volltextzugriff (PDF)

Columnar epitaxy of PtSi on Si (111)

Applied physics letters, 1990-08, Vol.57 (7), p.686-688

1990

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Heteroepitaxy of semiconductor-on-insulator structures: Si and Ge on CaF2/Si(111)

Journal of applied physics, 1986-12, Vol.60 (11), p.3886-3894

1986

Volltextzugriff (PDF)

Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

Thin solid films, 1990-01, Vol.184 (1-2), p.335-342

1990

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New class of Si-based superlattices : alternating layers of crystalline Si and porous amorphous Si1-xGex alloys

Applied physics letters, 1992-11, Vol.61 (19), p.2350-2352

1992

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Diffusion of Si in thin CoSi2 layers

Applied physics letters, 1989-04, Vol.54 (14), p.1314-1316

1989

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Visible luminescence from silicon wafers subjected to stain etches

Electronic structure of light-emitting porous Si

Microstructural investigations of light-emitting porous Si layers

Endotaxial growth of CoSi2 within (111) oriented Si in a molecular beam epitaxy system

A survey of recent mathematical art exhibitions

Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor

Epitaxial growth and characterization of CaF2 on Si

Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling

Surface morphology of epitaxial CaF2 films on Si substrates

Molecular beam epitaxy growth and applications of epitaxial fluoride films

Fractal tilings based on kite- and dart-shaped prototiles

Infrared photodetectors with tailorable response due to resonant plasmon absorption in epitaxial silicide particles embedded in silicon

Visible photoluminescence of porous Si1-xGex obtained by stain etching

Co diffusion and growth of buried single-crystal CoSi2 in Si(111) by endotaxy

Growth parameters affecting the formation of buried CoSi2 by endotaxy of Co on Si(111)

Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)

Optical properties of epitaxial CoSi2 and NiSi2 films on silicon

Columnar epitaxy of PtSi on Si (111)

Heteroepitaxy of semiconductor-on-insulator structures: Si and Ge on CaF2/Si(111)

Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

New class of Si-based superlattices : alternating layers of crystalline Si and porous amorphous Si1-xGex alloys

Diffusion of Si in thin CoSi2 layers

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