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Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers

IEEE transactions on microwave theory and techniques, 1993-04, Vol.41 (4), p.581-589

1993

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Resonant tunneling injection quantum-well lasers

IEEE photonics technology letters, 1995-06, Vol.7 (6), p.596-598

1995

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Valence band offsets in strained GaAs1-xPx/GaAs heterojunctions

Journal of electronic materials, 1995-06, Vol.24 (6), p.713-717

1995

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Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells

Applied physics letters, 1993-12, Vol.63 (26), p.3616-3618

1993

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Characteristic temperature study of GaAsP–AlGaAs tensile strained quantum well lasers

Journal of applied physics, 2000-11, Vol.88 (9), p.5400-5409

2000

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A gratingless wavelength stabilized semiconductor laser

Applied physics letters, 1996-11, Vol.69 (19), p.2807-2809

1996

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Ultrahigh mobility two-dimensional electron gas in Al(x)Ga(1-x)As /GaAs heterostructures by organometallic vapor phase epitaxy

Applied physics letters, 1993-10, Vol.63 (14), p.1960-1962

1993

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Ultrahigh mobility two-dimensional electron gas in Al x Ga1− x As/GaAs heterostructures by organometallic vapor phase epitaxy

Applied physics letters, 1993-10, Vol.63 (14), p.1960-1962

1993

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High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes

IEEE photonics technology letters, 1995-02, Vol.7 (2), p.140-143

1995

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Dependence of polarization mode and threshold current on tensile strain in [formula omitted] quantum well lasers

Solid-state electronics, 1997-04, Vol.41 (4), p.647-649

1997

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An investigation of tensile strained quantum wells and their application in near infrared laser diodes

Agahi, Farid

1995

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Tensile-strained barrier GaAsP/GaAs single quantum-well lasers

Applied physics letters, 1996-06, Vol.68 (26), p.3778-3780

1996

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Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy

Journal of crystal growth, 1994-05, Vol.139 (3), p.344-350

1994

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Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers

IEEE journal of quantum electronics, 1996-01, Vol.32 (1), p.29-37

1996

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Field-induced absorption edge merging in tensile strained GaAsP quantum wells

Applied physics letters, 1993-06, Vol.62 (26), p.3473-3475, Article 3473

1993

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High-quality two-dimensional electron gas in AlxGa1-xAs/GaAs hetetostructures by LP-OMVPE

IEEE transactions on electron devices, 1993, Vol.40 (3), p.502-506

1993

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Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

Journal of electronic materials, 1992-10, Vol.21 (10), p.947-953

1992

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Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures

Journal of electronic materials, 1994-07, Vol.23 (7), p.649-652

1994

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Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

Journal of electronic materials, 1990-09, Vol.19 (9), p.967-974

1990

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Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers

Resonant tunneling injection quantum-well lasers

Valence band offsets in strained GaAs1-xPx/GaAs heterojunctions

Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells

Characteristic temperature study of GaAsP–AlGaAs tensile strained quantum well lasers

A gratingless wavelength stabilized semiconductor laser

Ultrahigh mobility two-dimensional electron gas in Al(x)Ga(1-x)As /GaAs heterostructures by organometallic vapor phase epitaxy

Ultrahigh mobility two-dimensional electron gas in Al x Ga1− x As/GaAs heterostructures by organometallic vapor phase epitaxy

High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes

Dependence of polarization mode and threshold current on tensile strain in [formula omitted] quantum well lasers

An investigation of tensile strained quantum wells and their application in near infrared laser diodes

Tensile-strained barrier GaAsP/GaAs single quantum-well lasers

Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy

Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers

Field-induced absorption edge merging in tensile strained GaAsP quantum wells

High-quality two-dimensional electron gas in AlxGa1-xAs/GaAs hetetostructures by LP-OMVPE

Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium

Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

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