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Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

Journal of physics. D, Applied physics, 2014-04, Vol.47 (13)

2014

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Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Applied physics letters, 2002-05, Vol.80 (19), p.3542-3544

2002

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AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Applied physics letters, 2002-07, Vol.81 (4), p.604-606

2002

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Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

Applied physics letters, 2002-12, Vol.81 (23), p.4392-4394

2002

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MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters

Physica status solidi. A, Applications and materials science, 2011-12, Vol.208 (12), p.2724-2729

2011

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Terahertz detection by GaN/AlGaN transistors

Electronics letters, 2006, Vol.42 (23), p.1342-1344

2006

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Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Semiconductor science and technology, 2012-12, Vol.27 (12)

2012

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Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

Solid-state electronics, 2013-11, Vol.89, p.156-160

2013

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Pulsed atomic layer epitaxy of quaternary AlInGaN layers

Applied physics letters, 2001-08, Vol.79 (7), p.925-927

2001

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Near-band-edge photoluminescence of wurtzite-type AlN

Applied physics letters, 2002-10, Vol.81 (15), p.2755-2757

2002

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Deep-UV LED controlled AlGaN-based SAW oscillator

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1834-1838

2006

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Photoluminescence of AlGaN grown on bulk AlN substrates

Applied physics letters, 2004-07, Vol.85 (2), p.206-208

2004

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Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers

Applied physics letters, 2005-01, Vol.86 (4), p.41910

2005

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Guided-wave acousto-optic diffraction in AlxGa1−xN epitaxial layers

Applied physics letters, 2004-09, Vol.85 (12), p.2157-2159

2004

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GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

Applied physics letters, 2002-10, Vol.81 (17), p.3194-3196

2002

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UV-LED controlled GaN-based SAW phase shifter

Electronics letters, 2006-10, Vol.42 (21), p.1254-1255

2006

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Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes

Physica status solidi. A, Applied research, 2003-11, Vol.200 (1), p.99-101

2003

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1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K

Journal of applied physics, 2004-10, Vol.96 (7), p.3845-3847

2004

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Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

Journal of applied physics, 2000-02, Vol.87 (3), p.1374-1378

2000

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Transport properties of SiO 2 /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate

Journal of physics. D, Applied physics, 2014-04, Vol.47 (13), p.135108

2014

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Transport properties of SiO sub(2)/AllnN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

Journal of physics. D, Applied physics, 2014-04, Vol.47 (13), p.1-7

2014

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Dependence of AlGaN-based SAW oscillator frequency on temperature

Electronics letters, 2004-05, Vol.40 (10), p.637

2004

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Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

Journal of electronic materials, 2011-04, Vol.40 (4), p.377-381

2011

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Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

Physica status solidi. C, 2003-12 (7), p.2686-2690

2003

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High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors

Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.677-679

2005

Volltextzugriff (PDF)

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Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire

Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters

Terahertz detection by GaN/AlGaN transistors

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

Pulsed atomic layer epitaxy of quaternary AlInGaN layers

Near-band-edge photoluminescence of wurtzite-type AlN

Deep-UV LED controlled AlGaN-based SAW oscillator

Photoluminescence of AlGaN grown on bulk AlN substrates

Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers

Guided-wave acousto-optic diffraction in AlxGa1−xN epitaxial layers

GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates

UV-LED controlled GaN-based SAW phase shifter

Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes

1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K

Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process

Transport properties of SiO 2 /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate

Transport properties of SiO sub(2)/AllnN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

Dependence of AlGaN-based SAW oscillator frequency on temperature

Structural Characterization of Highly Conducting AlGaN (x > 50%) for Deep-Ultraviolet Light-Emitting Diode

Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors

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