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Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

Journal of crystal growth, 2008-08, Vol.310 (18), p.4088-4093

2008

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Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

Carbon (New York), 2010-08, Vol.48 (9), p.2671-2673

2010

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Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical–chemical vapor transport method

Journal of crystal growth, 2007-03, Vol.300 (2), p.314-318

2007

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Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Journal of applied physics, 2005-04, Vol.97 (8), p.084913-084913-7

2005

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Growth kinetics study in halide chemical vapor deposition of SiC

Journal of crystal growth, 2005-10, Vol.284 (1), p.112-122

2005

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Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results

Journal of crystal growth, 2006-01, Vol.287 (2), p.339-343

2006

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Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films

Journal of applied physics, 2009-07, Vol.106 (2)

2009

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Nonuniformities of electrical resistivity in undoped 6H-SiC wafers

Journal of applied physics, 2005-06, Vol.97 (11), p.113705-113705-6

2005

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Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1―xN

Journal of crystal growth, 2010-04, Vol.312 (8), p.1301-1306

2010

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Growth of 6H-SiC crystals with low boron concentration

Journal of crystal growth, 2006-01, Vol.287 (2), p.363-366

2006

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Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition

Journal of applied physics, 2007-01, Vol.101 (1), p.014903-014903-5

2007

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Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing

Journal of electronic materials, 2009-04, Vol.38 (4), p.551-556, Article 551

2009

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Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments

Physica. B, Condensed matter, 2007-12, Vol.401, p.77-80

2007

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Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

Materials science forum, 2009, Vol.600-603, p.389-392

2009

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Identification of a Three-Site Defect in Semi-Insulating 4H-SiC

Journal of electronic materials, 2007-04, Vol.36 (4), p.268-271

2007

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Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition

Journal of applied physics, 2006-01, Vol.99 (1)

2006

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Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport

Applied physics letters, 2005-05, Vol.86 (20), p.202102-202102-3

2005

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Halide-CVD Growth of Bulk SiC Crystals

Materials science forum, 2006-10, Vol.527-529, p.21-26

2006

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Resistivity Distribution in Undoped 6H-SiC Boules and Wafers

Materials science forum, 2006-10, Vol.527-529, p.51-54

2006

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Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals

Materials science forum, 2006-10, Vol.527-529, p.103-106

2006

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Growth of SiC Boules with Low Boron Concentration

Materials science forum, 2006-10, Vol.527-529, p.47-50

2006

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Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition

Materials science forum, 2006-10, Vol.527-529, p.497-500

2006

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Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition

Materials science forum, 2006-10, Vol.527-529, p.625-628

2006

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Tensile stress generation and dislocation reduction in Si-doped Al x Ga 1 − x N films

Journal of applied physics, 2009-07, Vol.106 (2), p.023506-023506-7

2009

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3C-SiC Films Grown on Si(111) Substrates as a Template for Graphene Epitaxy

ECS transactions, 2009, Vol.19 (5), p.131-135

2009

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Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical–chemical vapor transport method

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Growth kinetics study in halide chemical vapor deposition of SiC

Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results

Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films

Nonuniformities of electrical resistivity in undoped 6H-SiC wafers

Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1―xN

Growth of 6H-SiC crystals with low boron concentration

Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition

Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing

Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates

Identification of a Three-Site Defect in Semi-Insulating 4H-SiC

Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition

Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport

Halide-CVD Growth of Bulk SiC Crystals

Resistivity Distribution in Undoped 6H-SiC Boules and Wafers

Hybrid Physical-Chemical Vapor Transport Growth of SiC Bulk Crystals

Growth of SiC Boules with Low Boron Concentration

Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition

Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition

Tensile stress generation and dislocation reduction in Si-doped Al x Ga 1 − x N films

3C-SiC Films Grown on Si(111) Substrates as a Template for Graphene Epitaxy

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