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Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices

IEEE transactions on instrumentation and measurement, 2005-12, Vol.54 (6), p.2438-2445

2005

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Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.2070-2079

2002

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Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry

IEEE electron device letters, 2002-10, Vol.23 (10), p.606-608

2002

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Absolute transition probabilities of Al I and Al II spectral lines and intensity ratios within multiplets

Astronomy and astrophysics (Berlin), 2002-06, Vol.388 (2), p.704-711

2002

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Bulk and surface degradation mode in 0.35μm technology gg-nMOS ESD protection devices

Microelectronics and reliability, 2000-08, Vol.40 (8-10), p.1467-1472

2000

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Laser interferometric mapping of smart power ESD protection devices with different blocking capabilities

31st European Solid-State Device Research Conference, 2001, p.231-234

2001

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Absolute transition probabilities of Al I and Al IIspectral lines and intensity ratios within multiplets

Astronomy and astrophysics (Berlin), 2002-06, Vol.388 (2), p.704-711

2002

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Thermal and free carrier concentration mapping during ESD event in smart Power ESD protection devices using an improved laser interferometric technique

Microelectronics and reliability, 2000-08, Vol.40 (8-10), p.1365-1370

2000

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Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices

Journal of electrostatics, 2000-08, Vol.49 (3), p.195-213

2000

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Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry

Microelectronics and reliability, 2000-08, Vol.40 (8-10), p.1359-1364

2000

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Optical testing of submicron-technology MOSFETs and bipolar transistors

27th European Solid-State Device Research Conference, 1997, p.372-375

1997

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A laser beam method for evaluation of thermal time constant in smart power devices

Microelectronics and reliability, 1997-10, Vol.37 (10), p.1727-1730

1997

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Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), 2000, p.304-309

2000

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Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress

Microelectronics and reliability, 1999, Vol.39 (6), p.925-930

1999

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Characterization of semiconductor devices by infrared laser interferometry

Elektrotechnik und Informationstechnik, 1998-07, Vol.115 (7-8), p.403-410

1998

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Internal characterization of IGBTs using the backside laser probing technique-interpretation of measurement by numerical simulation

Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212), 1998, p.199-202

1998

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Backside laserprober characterization of thermal effects during high current stress in smart power ESD protection devices

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217), 1998, p.691-694

1998

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Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices

Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 1999 (IEEE Cat. No.99TH8396), 1999, p.241-250

1999

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Investigation of 3D Phenomena in the Triggering of gg-nMOS Electrostatic Discharge Protection Devices

30th European Solid-State Device Research Conference, 2000, p.520-523

2000

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Single-shot nanosecond thermal imaging of semiconductor devices using absorption measurements

IEEE transactions on device and materials reliability, 2003-09, Vol.3 (3), p.85-88

2003

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A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312), 1999, p.193-196

1999

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A Study of Temperature Distribution in SOI-Smart Power Devices in Transient Conditions by Optical Interferometry

27th European Solid-State Device Research Conference, 1997, p.512-515

1997

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Study of trigger instabilities in smart power technology ESD protection devices using a laser interferometric thermal mapping technique

2001 Electrical Overstress/Electrostatic Discharge Symposium, 2001, p.214-225

2001

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Stress evolution of low frequency (RTS) noise and leakage current in grounded-gate nMOSFET ESD protection devices

29th European Solid-State Device Research Conference, 1999, Vol.1, p.604-607

1999

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Study of bipolar transistor action during ESD stress in smart power ESD protection devices using interferometric temperature mapping

29th European Solid-State Device Research Conference, 1999, Vol.1, p.596-599

1999

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Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices

Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry

Absolute transition probabilities of Al I and Al II spectral lines and intensity ratios within multiplets

Bulk and surface degradation mode in 0.35μm technology gg-nMOS ESD protection devices

Laser interferometric mapping of smart power ESD protection devices with different blocking capabilities

Absolute transition probabilities of Al I and Al IIspectral lines and intensity ratios within multiplets

Thermal and free carrier concentration mapping during ESD event in smart Power ESD protection devices using an improved laser interferometric technique

Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices

Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry

Optical testing of submicron-technology MOSFETs and bipolar transistors

A laser beam method for evaluation of thermal time constant in smart power devices

Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures

Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress

Characterization of semiconductor devices by infrared laser interferometry

Internal characterization of IGBTs using the backside laser probing technique-interpretation of measurement by numerical simulation

Backside laserprober characterization of thermal effects during high current stress in smart power ESD protection devices

Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices

Investigation of 3D Phenomena in the Triggering of gg-nMOS Electrostatic Discharge Protection Devices

Single-shot nanosecond thermal imaging of semiconductor devices using absorption measurements

A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices

A Study of Temperature Distribution in SOI-Smart Power Devices in Transient Conditions by Optical Interferometry

Study of trigger instabilities in smart power technology ESD protection devices using a laser interferometric thermal mapping technique

Stress evolution of low frequency (RTS) noise and leakage current in grounded-gate nMOSFET ESD protection devices

Study of bipolar transistor action during ESD stress in smart power ESD protection devices using interferometric temperature mapping

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