UB Paderborn / Katalog / Suche / in CDI

Engineering transient hyperbolic metamaterials using InAsSb-based semiconductor

AIP advances, 2021-07, Vol.11 (7), p.075115-075115-5

2021

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Studies of interfacial layers between 4H-SiC (0 0 0 1) and graphene

Carbon (New York), 2010-04, Vol.48 (5), p.1670-1673

2010

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Study of bulk carrier properties in largely hybridized InAsSb/GaSb superlattice materials

Journal of applied physics, 2023-01, Vol.133 (2)

2023

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Optimization of hybridized InAsSb/InGaSb semiconductor topological materials

Applied physics letters, 2022-08, Vol.121 (6)

2022

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Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Carrier transfer from InAs quantum dots to ErAs metal nanoparticles

Applied physics letters, 2014-09, Vol.105 (10)

2014

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Strain Analysis of Compositionally Tailored Interfaces in InAs/GaSb Superlattices by Aberration Corrected Transmission Electron Microscopy

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.1808-1809

2012

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Compositional analysis of mixed-cation-anion III-V semiconductor interfaces using phase retrieval high-resolution transmission electron microscopy

Journal of microscopy (Oxford), 2008-06, Vol.230 (3), p.372-381

2008

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Determination of critical parameters for design of semiconductor hyperbolic metamaterials

Optical materials, 2021-02, Vol.112, p.110576, Article 110576

2021

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Micro-raman study of the damage in nanopatterned GaAs(001)

Journal of electronic materials, 2002-10, Vol.31 (10), p.1112-1116

2002

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Investigation of strain and stoichiometry of epitaxial titanium nitride on sapphire

Thin solid films, 2020-03, Vol.697, p.137832, Article 137832

2020

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Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

Journal of electronic materials, 1999-07, Vol.28 (7), p.878-880

1999

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Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

Applied physics letters, 2006-02, Vol.88 (9), p.091904-091904-3

2006

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Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

Journal of electronic materials, 2000-07, Vol.29 (7), p.906-908

2000

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The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices

Journal of electronic materials, 1999-08, Vol.28 (8), p.955-958

1999

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A comparison of the critical thickness for MBE grown LT-GaAs determined by in-situ ellipsometry and transmission electron microscopy

Journal of electronic materials, 1997-04, Vol.26 (4), p.391-396

1997

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Self-assembly of heterojunction quantum dots

Applied physics letters, 2006-04, Vol.88 (16), p.163113-163113-3

2006

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Quantitative Chemical Mapping of Engineered Interfaces in Quaternary III-V Semiconductor Heterostructures Using Phase Retrieval High Resolution Transmission Electron Microscopy

Microscopy and microanalysis, 2008-08, Vol.14 (S2), p.408-409

2008

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Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

Journal of electronic materials, 2000-07, Vol.29 (7), p.940-943

2000

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Study of the driving force for the self-assembly of heterojunction quantum dots (zero D molecules) using finite element analysis

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3C36

2010

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Compositional analysis of graded AlxGa(1−x)As layers by x-ray energy dispersive spectrometry

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2004-05, Vol.22 (3), p.1598-1601

2004

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Observation of low-T GaAs growth regimes by real-time ellipsometry

Journal of electronic materials, 1993-12, Vol.22 (12), p.1387-1390

1993

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X-ray analysis of GaAs layers on GaAs(001) and GaAS(111)B surfaces grown at low temperatures by molecular beam epitaxy

Applied physics letters, 1991-04, Vol.58 (17), p.1854-1856

1991

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Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-01, Vol.21 (1), p.110-115

2003

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In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy

Journal of crystal growth, 1999-05, Vol.201, p.128-131

1999

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Engineering transient hyperbolic metamaterials using InAsSb-based semiconductor

Studies of interfacial layers between 4H-SiC (0 0 0 1) and graphene

Study of bulk carrier properties in largely hybridized InAsSb/GaSb superlattice materials

Optimization of hybridized InAsSb/InGaSb semiconductor topological materials

Evaluation of thickness and strain of thin planar layers of InAs on GaAs(001) using spectroscopic ellipsometry

Carrier transfer from InAs quantum dots to ErAs metal nanoparticles

Strain Analysis of Compositionally Tailored Interfaces in InAs/GaSb Superlattices by Aberration Corrected Transmission Electron Microscopy

Compositional analysis of mixed-cation-anion III-V semiconductor interfaces using phase retrieval high-resolution transmission electron microscopy

Determination of critical parameters for design of semiconductor hyperbolic metamaterials

Micro-raman study of the damage in nanopatterned GaAs(001)

Investigation of strain and stoichiometry of epitaxial titanium nitride on sapphire

Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates

Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices

A comparison of the critical thickness for MBE grown LT-GaAs determined by in-situ ellipsometry and transmission electron microscopy

Self-assembly of heterojunction quantum dots

Quantitative Chemical Mapping of Engineered Interfaces in Quaternary III-V Semiconductor Heterostructures Using Phase Retrieval High Resolution Transmission Electron Microscopy

Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

Study of the driving force for the self-assembly of heterojunction quantum dots (zero D molecules) using finite element analysis

Compositional analysis of graded AlxGa(1−x)As layers by x-ray energy dispersive spectrometry

Observation of low-T GaAs growth regimes by real-time ellipsometry

X-ray analysis of GaAs layers on GaAs(001) and GaAS(111)B surfaces grown at low temperatures by molecular beam epitaxy

Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy

In situ monitoring of GaAs growth at high temperature by spectroscopic ellipsometry and desorption mass spectroscopy

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