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Evolution of metastable phases in silicon during nanoindentation: mechanism analysis and experimental verification

Nanotechnology, 2009-07, Vol.20 (30), p.305705-305705

2009

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Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects

Nanotechnology, 2012-08, Vol.23 (30), p.305707-305707

2012

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Fast Fourier transform scanning spreading resistance microscopy: a novel technique to overcome the limitations of classical conductive AFM techniques

Nanotechnology, 2015-09, Vol.26 (35), p.355702-355702

2015

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Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

Applied physics letters, 2014-08, Vol.105 (6)

2014

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Outwitting the series resistance in scanning spreading resistance microscopy

Ultramicroscopy, 2016-02, Vol.161, p.59-65

2016

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Observation of diameter dependent carrier distribution in nanowire-based transistors

Nanotechnology, 2011-05, Vol.22 (18), p.185701

2011

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Insights into the nanoscale lateral and vertical phase separation in organic bulk heterojunctions via scanning probe microscopy

Nanoscale, 2016-02, Vol.8 (6), p.3629-3637

2016

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On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Conductive diamond tips with sub-nanometer electrical resolution for characterization of nanoelectronics device structures

Physica status solidi. A, Applications and materials science, 2009-09, Vol.206 (9), p.2077-2081

2009

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Observation of diameter dependent carrier distribution in nanowire-based transistors

Nanotechnology, 2011-05, Vol.22 (18), p.185701-185701

2011

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Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy

Ultramicroscopy, 2013-02, Vol.125, p.18-23

2013

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A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2690-2698

2007

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Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.45-53

2005

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Electrical properties of amino SAM layers studied with conductive AFM

European polymer journal, 2013-08, Vol.49 (8), p.1952-1956

2013

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Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips

Applied physics letters, 2003-03, Vol.82 (11), p.1724-1726

2003

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Nanoprober-based EBIC measurements for nanowire transistor structures

Microelectronic engineering, 2013-05, Vol.105, p.99-102

2013

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Diamond nanoprobes for electrical probing of nanoelectronics device structures

Microelectronic engineering, 2014-06, Vol.121, p.19-23

2014

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Progress towards a physical contact model for scanning spreading resistance microscopy

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-09, Vol.102 (1), p.132-137

2003

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Active dopant characterization methodology for germanium

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-01, Vol.24 (1), p.381-389

2006

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TiN scanning probes for electrical profiling of nanoelectronics device structures

Microelectronic engineering, 2012-09, Vol.97, p.255-258

2012

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New SPM concept for accurate and repeatable tip positioning

Microelectronic engineering, 2009-04, Vol.86 (4), p.1234-1237

2009

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Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.26.2.1-26.2.4

2021

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Impact of Preferential P-Diffusion Along the Grain Boundaries on Fine-Grained Polysilicon Solar Cells

IEEE electron device letters, 2007-10, Vol.28 (10), p.899-901

2007

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Topside release of atomic force microscopy probes with molded diamond tips

Microelectronic engineering, 2005-03, Vol.78, p.73-78

2005

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Boron pocket and channel deactivation in nMOS transistors with SPER junctions

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.71-77

2006

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Evolution of metastable phases in silicon during nanoindentation: mechanism analysis and experimental verification

Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects

Fast Fourier transform scanning spreading resistance microscopy: a novel technique to overcome the limitations of classical conductive AFM techniques

Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

Outwitting the series resistance in scanning spreading resistance microscopy

Observation of diameter dependent carrier distribution in nanowire-based transistors

Insights into the nanoscale lateral and vertical phase separation in organic bulk heterojunctions via scanning probe microscopy

On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Conductive diamond tips with sub-nanometer electrical resolution for characterization of nanoelectronics device structures

Observation of diameter dependent carrier distribution in nanowire-based transistors

Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy

A Reliable Metric for Mobility Extraction of Short-Channel MOSFETs

Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies

Electrical properties of amino SAM layers studied with conductive AFM

Sub-5-nm-spatial resolution in scanning spreading resistance microscopy using full-diamond tips

Nanoprober-based EBIC measurements for nanowire transistor structures

Diamond nanoprobes for electrical probing of nanoelectronics device structures

Progress towards a physical contact model for scanning spreading resistance microscopy

Active dopant characterization methodology for germanium

TiN scanning probes for electrical profiling of nanoelectronics device structures

New SPM concept for accurate and repeatable tip positioning

Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond

Impact of Preferential P-Diffusion Along the Grain Boundaries on Fine-Grained Polysilicon Solar Cells

Topside release of atomic force microscopy probes with molded diamond tips

Boron pocket and channel deactivation in nMOS transistors with SPER junctions

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