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Study of melt-grown GaAsN and InGaAsN epitaxial layers

Journal of physics. Conference series, 2010-11, Vol.253 (1), p.012045

2010

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Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy

Journal of applied physics, 1999-06, Vol.85 (11), p.7888-7892

1999

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Dilute GaAsN and GaInAsN grown by liquid phase epitaxy

Journal of physics. Conference series, 2010-04, Vol.223 (1), p.012016, Article 012016

2010

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Electron concentration and mobility profiles in InN layers grown by MBE

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (7), p.1681-1685

2006

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Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer

Journal of crystal growth, 2001-09, Vol.230 (3), p.381-386

2001

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Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells

Applied physics letters, 2003-09, Vol.83 (13), p.2590-2592

2003

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Preparation and characterization of multilayer AlGaAs/GaAs structures for photovoltaic application

Journal of physics. Conference series, 2008-05, Vol.113 (1), p.012031

2008

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Studies of the phase equilibria in the Ag–Sn–Zn system

Journal of alloys and compounds, 2001-08, Vol.327 (1), p.285-291

2001

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Hall Effect Data Analysis of GaN n+n Structures

Physica status solidi. B, Basic research, 2002-12, Vol.234 (3), p.872-876

2002

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Effect of carrier concentration on the microhardness of GaN layers

Journal of materials science. Materials in electronics, 2003-10, Vol.14 (10-12), p.771-772

2003

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Experimental study of the ternary Ag–Sn–Zn system through diffusion couples

Journal of alloys and compounds, 2002-02, Vol.334 (1), p.182-186

2002

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APPLICATION OF THE CURRICULUM IN ECOLOGY FOR THE STUDY OF THE LOCAL ENVIRONMENT

Biotechnology, biotechnological equipment, 2009-01, Vol.23 (2)

2009

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The National Biology Competition: Criteria for Assessing Students' Knowledge and Skills

Biotechnology, biotechnological equipment, 2009-01, Vol.23 (sup1), p.50-52

2009

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Application of the Curriculum in Ecology for the Study of the Local Environment

Biotechnology, biotechnological equipment, 2009-01, Vol.23 (sup1), p.47-49

2009

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NATIONAL BIOLOGY COMPETITION: CRITERIA FOR ASSESSING STUDENTS' KNOWLEDGE AND SKILLS

Biotechnology, biotechnological equipment, 2009-01, Vol.23 (2)

2009

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Modeling of the free-electron recombination band in emission spectra of highly conducting n − GaN

Physical review. B, Condensed matter, 2001-07, Vol.64 (4), Article 045213

2001

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Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity

Physical review. B, Condensed matter, 2003-01, Vol.67 (4), Article 045314

2003

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Electron transport in Sb-doped metalorganic epitaxial GaAs grown at moderate As-rich conditions

Journal of applied physics, 1994-09, Vol.76 (6), p.3566-3572

1994

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Sublinear impurity solubility in indium phosphide and gallium arsenide epitaxial layers

Journal of crystal growth, 1995-02, Vol.148 (1), p.17-24

1995

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Magnetic freeze-out of electrons in InGaN/GaN multiple quantum wells

Physica status solidi. C, 2003-12 (7), p.2635-2638

2003

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Investigation of melt-grown dilute GaAsN and GaInAsN nanostructures for photovoltaics

Energy procedia, 2010-08, Vol.2 (1), p.165-168

2010

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Scientific Literacy: Problems Of Science Education In Bulgarian School

PROBLEMS OF EDUCATION IN THE 21ST CENTURY, 2010-01, Vol.19, p.113

2010

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Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’

MRS proceedings, 1999, Vol.595, Article F99W3.14

1999

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Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Semiconductor science and technology, 1987-08, Vol.2 (8), p.537-541

1987

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Free electron recombination in degenerately doped and moderately compensated gallium arsenide

Semiconductor science and technology, 1990-06, Vol.5 (6), p.620-623

1990

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Study of melt-grown GaAsN and InGaAsN epitaxial layers

Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy

Dilute GaAsN and GaInAsN grown by liquid phase epitaxy

Electron concentration and mobility profiles in InN layers grown by MBE

Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer

Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells

Preparation and characterization of multilayer AlGaAs/GaAs structures for photovoltaic application

Studies of the phase equilibria in the Ag–Sn–Zn system

Hall Effect Data Analysis of GaN n+n Structures

Effect of carrier concentration on the microhardness of GaN layers

Experimental study of the ternary Ag–Sn–Zn system through diffusion couples

APPLICATION OF THE CURRICULUM IN ECOLOGY FOR THE STUDY OF THE LOCAL ENVIRONMENT

The National Biology Competition: Criteria for Assessing Students' Knowledge and Skills

Application of the Curriculum in Ecology for the Study of the Local Environment

NATIONAL BIOLOGY COMPETITION: CRITERIA FOR ASSESSING STUDENTS' KNOWLEDGE AND SKILLS

Modeling of the free-electron recombination band in emission spectra of highly conducting n − GaN

Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity

Electron transport in Sb-doped metalorganic epitaxial GaAs grown at moderate As-rich conditions

Sublinear impurity solubility in indium phosphide and gallium arsenide epitaxial layers

Magnetic freeze-out of electrons in InGaN/GaN multiple quantum wells

Investigation of melt-grown dilute GaAsN and GaInAsN nanostructures for photovoltaics

Scientific Literacy: Problems Of Science Education In Bulgarian School

Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’

Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Free electron recombination in degenerately doped and moderately compensated gallium arsenide

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