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Segregation and activation of Sb implanted in Si by UV nanosecond-laser-anneal-induced non-equilibrium solidification

Journal of applied physics, 2020-04, Vol.127 (13)

2020

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Lanthanum and Lanthanum Silicide Contacts on N-Type Silicon

IEEE electron device letters, 2017-07, Vol.38 (7), p.843-846

2017

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3D Simulation for Melt Laser Anneal Integration in FinFET's Contact

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.1323-1327

2020

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From fragmentation to financial integration in Europe

Enoch, Charles/Everaert, Luc/Tressel, Thierry/Zhou, Jianping

1, 2013

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Crystallinity and composition of Sc1−x(−y)Si x (P y ) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2)

2024

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Asset Bubbles:Re-thinking Policy for the Age of Asset Management

Jones, Bradley

1, 2015

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Thermal Stress-Aware CMOS-SRAM Partitioning in Sequential 3-D Technology

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4631-4635

2020

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A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond

MRS advances, 2022-12, Vol.7 (36), p.1369-1379

2022

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TiSi(Ge) Contacts Formed at Low Temperature Achieving Around 2 \,\, \times \,\, 10^}~\Omega cm2 Contact Resistivities to p-SiGe

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.500-506

2017

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Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrathin TiSix on n-Si

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1869-1872

2018

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Structural Reforms in the Euro Area: Economic Impact and Role of Synchronization Across Markets and Countries

1, 2006

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Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

Solid-state electronics, 2019-02, Vol.152, p.58-64

2019

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Capital Operating Time and Total Factor Productivity Growth in France

2003

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Lifting euro area growth: priorities for structural reforms and governance.

2010

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International Spillover of Labor Market Reforms

Dao, Mai

1, 2008

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Writing Clearly: ECB's Monetary Policy Communication

1, 2008

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Crystallinity and composition of Sc 1−x(−y) Si x (P y ) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Crystallinity and composition of Sc1−x(−y)Six(Py) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.02SP97

2024

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Lifting Euro Area Growth: Priorities for Structural Reforms and Governance

Volltextzugriff (PDF)

Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrathin TiSi x on n-Si

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1869-1872

2018

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Tracking Global Demand for Emerging Market Sovereign Debt

1, 2014

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Why It Pays to Synchronize Structural Reforms in the Euro Area across Markets and Countries

IMF staff papers, 2008-06, Vol.55 (2), p.356-366

2008

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Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)

AIP conference proceedings, 2008, Vol.1066 (1), p.465-468

2008

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Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching 1 \times 10^ Ohm-cm2

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4632-4641

2016

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Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

Thin solid films, 2010-01, Vol.518 (6), p.S48-S52

2010

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Segregation and activation of Sb implanted in Si by UV nanosecond-laser-anneal-induced non-equilibrium solidification

Lanthanum and Lanthanum Silicide Contacts on N-Type Silicon

3D Simulation for Melt Laser Anneal Integration in FinFET's Contact

From fragmentation to financial integration in Europe

Crystallinity and composition of Sc1−x(−y)Si x (P y ) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Asset Bubbles:Re-thinking Policy for the Age of Asset Management

Thermal Stress-Aware CMOS-SRAM Partitioning in Sequential 3-D Technology

A snapshot review on metal–semiconductor contact exploration for 7-nm CMOS technology and beyond

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around 2 \,\, \times \,\, 10^}~\Omega cm2 Contact Resistivities to p-SiGe

Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrathin TiSix on n-Si

Structural Reforms in the Euro Area: Economic Impact and Role of Synchronization Across Markets and Countries

Improvement in drain-induced-barrier-lowering and on-state current characteristics of bulk Si fin field-effect-transistors using high temperature Phosphorus extension ion implantation

Capital Operating Time and Total Factor Productivity Growth in France

Lifting euro area growth: priorities for structural reforms and governance.

International Spillover of Labor Market Reforms

Writing Clearly: ECB's Monetary Policy Communication

Crystallinity and composition of Sc 1−x(−y) Si x (P y ) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Crystallinity and composition of Sc1−x(−y)Six(Py) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications

Lifting Euro Area Growth: Priorities for Structural Reforms and Governance

Improved Ohmic Performance by the Metallic Bilayer Contact Stack of Oxygen-Incorporated La/Ultrathin TiSi x on n-Si

Tracking Global Demand for Emerging Market Sovereign Debt

Why It Pays to Synchronize Structural Reforms in the Euro Area across Markets and Countries

Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)

Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching 1 \times 10^ Ohm-cm2

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

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