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Two Cases of Preoperatively Diagnosed Ileosigmoid Knot

The Japanese Journal of Gastroenterological Surgery, 2012/01/01, Vol.45(1), pp.93-100

2012

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Adjuvant chemotherapy with S-1 plus docetaxel for highly advanced gastric cancer patients

Gan to kagaku ryoho, 2012-11, Vol.39 (12), p.2310

2012

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LSD1 defines the fiber type-selective responsiveness to environmental stress in skeletal muscle

eLife, 2023-01, Vol.12

2023

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Endoscopic retrograde cholangiography versus peroral cholangioscopy to evaluate intraepithelial tumor spread in biliary cancer

Endoscopy, 2009-11, Vol.41 (11), p.959-964

2009

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High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

Journal of crystal growth, 1991-05, Vol.111 (1-4), p.912-915

1991

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High hole mobility in modulation-doped and strain-controlled p-Si0.5Ge0.5/Ge/Si1-xsGexs heterostructures fabricated using molecular beam epitaxy

Japanese journal of applied physics, 1990, Vol.29 (7), p.L1059-L1061

1990

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High hole mobility in strained Ge channel of modulation-doped p-Si 0.5Ge 0.5/Ge/Si 1−xGe x heterostructure

Journal of crystal growth, 1991, Vol.111 (1), p.912-915

1991

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High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si 0.5 Ge 0.5 /Ge/Si 1-X s Ge X s Heterostructures Fabricated Using Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 1990-07, Vol.29 (7A), p.L1059

1990

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Formation of High Quality Si1−xGex/Si Heterostructures by Selective-Area Mbe Growth

MRS proceedings, 1990, Vol.198

1990

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Role of Si 1−x Ge x Buffer Layer in Determining Electrical Characteristics of Modulation-Doped p-Si 0 . 5 Ge 0. 5 /Ge/Si 1−x Ge x Heterostructures

MRS proceedings, 1990, Vol.198, Article 491

1990

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Role of Si1−xGex Buffer Layer in Determining Electrical Characteristics of Modulation-Doped p-Si0. 5Ge0. 5/Ge/Si1−xGex Heterostructures

MRS proceedings, 1990, Vol.198

1990

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Formation of High Quality Si 1−x Ge x /Si Heterostructures by Selective-Area Mbe Growth

MRS proceedings, 1990, Vol.198, Article 57

1990

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Strain-Controlled High Mobility in Modulation Doped Si0.5Ge0.5/Ge/Si1-xGex Hetero-Structures

MRS proceedings, 1989, Vol.160

1989

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Strain-Controlled High Mobility in Modulation Doped Si 0.5 Ge 0.5 /Ge/Si 1-x Ge x Hetero-Structures

MRS proceedings, 1989, Vol.160, Article 777

1989

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Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si 0.5 Ge 0.5 /Ge/Si 1-x Ge x Heterostructure

Japanese Journal of Applied Physics, 1991-02, Vol.30 (2A), p.L163

1991

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A Case of Sicca Syndrome due to Primary Amyloidosis

Japanese Journal of Medicine, 1984, Vol.23(3), pp.250-253

1984

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Development of a 200 kV High-Resolution Electron Microscope

Journal of electron microscopy, 1980, Vol.29 (1), p.54-58

1980

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Two Cases of Preoperatively Diagnosed Ileosigmoid Knot

Adjuvant chemotherapy with S-1 plus docetaxel for highly advanced gastric cancer patients

LSD1 defines the fiber type-selective responsiveness to environmental stress in skeletal muscle

Endoscopic retrograde cholangiography versus peroral cholangioscopy to evaluate intraepithelial tumor spread in biliary cancer

High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

High hole mobility in modulation-doped and strain-controlled p-Si0.5Ge0.5/Ge/Si1-xsGexs heterostructures fabricated using molecular beam epitaxy

High hole mobility in strained Ge channel of modulation-doped p-Si 0.5Ge 0.5/Ge/Si 1−xGe x heterostructure

High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si 0.5 Ge 0.5 /Ge/Si 1-X s Ge X s Heterostructures Fabricated Using Molecular Beam Epitaxy

Formation of High Quality Si1−xGex/Si Heterostructures by Selective-Area Mbe Growth

Role of Si 1−x Ge x Buffer Layer in Determining Electrical Characteristics of Modulation-Doped p-Si 0 . 5 Ge 0. 5 /Ge/Si 1−x Ge x Heterostructures

Role of Si1−xGex Buffer Layer in Determining Electrical Characteristics of Modulation-Doped p-Si0. 5Ge0. 5/Ge/Si1−xGex Heterostructures

Formation of High Quality Si 1−x Ge x /Si Heterostructures by Selective-Area Mbe Growth

Strain-Controlled High Mobility in Modulation Doped Si0.5Ge0.5/Ge/Si1-xGex Hetero-Structures

Strain-Controlled High Mobility in Modulation Doped Si 0.5 Ge 0.5 /Ge/Si 1-x Ge x Hetero-Structures

Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si 0.5 Ge 0.5 /Ge/Si 1-x Ge x Heterostructure

A Case of Sicca Syndrome due to Primary Amyloidosis

Development of a 200 kV High-Resolution Electron Microscope

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