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Defects in silicon: the role of vibrational entropy

Solid state communications, 2003-10, Vol.128 (5), p.181-185

2003

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Hydrogen in silicon: A discussion of diffusion and passivation mechanisms

Solar energy materials and solar cells, 1996, Vol.41, p.159-169

1996

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Local vibrational modes of hydrogen in GaN: Observation and theory

Physica. B, Condensed matter, 2006-04, Vol.376, p.464-467

2006

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Three carbon pairs in Si

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2981-2984

2012

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The CuPL defect and the Cus1Cui3 complex

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2967-2969

2012

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Theoretical study of the C iO i and I siC iO i defects in Si

Physica. B, Condensed matter, 2007, Vol.401, p.163-166

2007

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Theory of defects in Si and Ge: Past, present and recent developments

Thin solid films, 2010-02, Vol.518 (9), p.2413-2417

2010

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Non-equilibrium molecular-dynamics for impurities in semiconductors: Vibrational lifetimes and thermal conductivities

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4509-4514

2009

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Isotopic dependence of the heat capacity of c-C, Si, and Ge: an ab initio calculation

Solid state communications, 2004-07, Vol.131 (3), p.229-233

2004

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Rich chemistry of copper in crystalline silicon

Physical review. B, Condensed matter, 1999-08, Vol.60 (8), p.5375-5382

Estreicher, S. K.

1999

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Theoretical study of the CiOi and IsiCiOi defects in Si

Physica. B, Condensed matter, 2007-12, Vol.401-402, p.163-166

2007

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Vibrational lifetimes of light impurities in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-12, Vol.253 (1-2), p.196-199

2006

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First-principles study of iron and iron pairs in Si

Physica. B, Condensed matter, 2007-12, Vol.401, p.105-108

2007

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Predicting the energetics of defects at T>0 K

Physica. B, Condensed matter, 2006-04, Vol.376, p.940-944

2006

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Non-equilibrium dynamics for impurities in semiconductors

Physica. B, Condensed matter, 2009-12, Vol.404 (22), p.4337-4340

2009

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Optically active hydrogen dimers in silicon

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.176-179

1999

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Measurements of the heat capacity of diamond with different isotopic compositions

Solid state communications, 2005-02, Vol.133 (7), p.465-468

2005

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Boron–oxygen complexes in Si

Physica. B, Condensed matter, 2006-04, Vol.376, p.133-136

2006

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D, H, and Mu in GaN: Theoretical predictions at finite temperatures

Physica. B, Condensed matter, 2006-03, Vol.374, p.363-367

2006

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First-principles investigations of Fe–H interactions in silicon

Physica. B, Condensed matter, 2007-12, Vol.401, p.171-174

2007

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First-principles theory of the temperature dependence of vibrational lifetimes for light impurities in Si

Physica. B, Condensed matter, 2006-04, Vol.376, p.963-965

2006

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Hydrogen interactions with defects in crystalline solids

Reviews of modern physics, 1992-04, Vol.64 (2), p.559-617

1992

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Structure and Dynamics of Point Defects in Crystalline Silicon

physica status solidi (b), 2000-01, Vol.217 (1), p.513-532

Estreicher, S.K.

2000

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Predicting the energetics of defects at T>0K

Physica. B, Condensed matter, 2006-04, Vol.376-377, p.940-944

2006

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The ring-hexavacany in silicon: A stable and inactive defect

Applied physics letters, 1997-01, Vol.70 (4), p.432-434

1997

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Defects in silicon: the role of vibrational entropy

Hydrogen in silicon: A discussion of diffusion and passivation mechanisms

Local vibrational modes of hydrogen in GaN: Observation and theory

Three carbon pairs in Si

The CuPL defect and the Cus1Cui3 complex

Theoretical study of the C iO i and I siC iO i defects in Si

Theory of defects in Si and Ge: Past, present and recent developments

Non-equilibrium molecular-dynamics for impurities in semiconductors: Vibrational lifetimes and thermal conductivities

Isotopic dependence of the heat capacity of c-C, Si, and Ge: an ab initio calculation

Rich chemistry of copper in crystalline silicon

Theoretical study of the CiOi and IsiCiOi defects in Si

Vibrational lifetimes of light impurities in silicon

First-principles study of iron and iron pairs in Si

Predicting the energetics of defects at T>0 K

Non-equilibrium dynamics for impurities in semiconductors

Optically active hydrogen dimers in silicon

Measurements of the heat capacity of diamond with different isotopic compositions

Boron–oxygen complexes in Si

D, H, and Mu in GaN: Theoretical predictions at finite temperatures

First-principles investigations of Fe–H interactions in silicon

First-principles theory of the temperature dependence of vibrational lifetimes for light impurities in Si

Hydrogen interactions with defects in crystalline solids

Structure and Dynamics of Point Defects in Crystalline Silicon

Predicting the energetics of defects at T>0K

The ring-hexavacany in silicon: A stable and inactive defect

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