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Development of highly reliable ferroelectric random access memory and its Internet of Things applications

Japanese Journal of Applied Physics, 2018-11, Vol.57 (11S), p.11

2018

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Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGK16

2020

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Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories

Japanese Journal of Applied Physics, 2024-08, Vol.63 (8)

2024

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Development of a Pb(Zr,Ti)O 3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories

Japanese Journal of Applied Physics, 2024-08, Vol.63 (8), p.8

2024

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Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories

Japanese Journal of Applied Physics, 2024-08, Vol.63 (8), p.08SP04

2024

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Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM

Applied physics letters, 2022-03, Vol.120 (10)

2022

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An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O3 capacitor

Japanese Journal of Applied Physics, 2022-11, Vol.61 (SN), p.SN1013

2022

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An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O 3 capacitor

Japanese Journal of Applied Physics, 2022-11, Vol.61 (SN), p.SN1013

2022

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Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions

Journal of applied physics, 2019-08, Vol.126 (7)

2019

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO x underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.16503

2019

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1)

2019

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Control of La-doped Pb(Zr,Ti)O3 crystalline orientation and its influence on the properties of ferroelectric random access memory

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10S)

2017

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Control of La-doped Pb(Zr,Ti)O 3 crystalline orientation and its influence on the properties of ferroelectric random access memory

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10S), p.10

2017

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO^sub x^ underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.016503

2019

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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOx bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor

Japanese Journal of Applied Physics, 2018-11, Vol.57 (11S)

2018

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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x bottom electrode for the La-doped Pb(Zr,Ti)O 3 ferroelectric capacitor

Japanese Journal of Applied Physics, 2018-11, Vol.57 (11S), p.11

2018

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Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO ^sub x^ bottom electrode for the La-doped Pb(Zr,Ti)O^sub 3^ ferroelectric capacitor

Japanese Journal of Applied Physics, 2018-11, Vol.57 (11), p.11UF01

2018

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Control of La-doped Pb(Zr,Ti)O^sub 3^ crystalline orientation and its influence on the properties of ferroelectric random access memory

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10), p.10PF14

2017

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Direct deposition of SrBi2Ta2O9 Film on IrO2 electrode using liquid source CVD method

Integrated ferroelectrics, 1999-10, Vol.26 (1-4), p.103-108

1999

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Development of Ferroelectric RAM (FRAM) for Mass Production

Journal of physical science and application, 2015-01, Vol.5 (1)

2015

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Novel pseudomorphic structure on Si substrate grown by metalorganic vapor phase epitaxy

Journal of crystal growth, 1994-12, Vol.145 (1), p.924-928

1994

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Two Slowly Decaying Luminescence Bands in Alkali Iodides

Journal of the Physical Society of Japan, 1985, Vol.54 (11), p.4418-4430

1985

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A new electrode structure of IrOx/Bi-doped SrRuO3 for highly reliable La-doped Pb (Zr, Ti)O3-based ferroelectric memories

2023 22nd International Symposium INFOTEH-JAHORINA (INFOTEH), 2023, p.1-5

2023

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Realization of highly resistive GaAs/Si interface and improvement of RF performance for high electron-mobility transistors grown on Si substrates

Japanese Journal of Applied Physics, 1997-04, Vol.36 (4A), p.2022-2027

1997

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Volume Change due to Self-Trapped Exciton and Frenkel Pair in KBr

Journal of the Physical Society of Japan, 1986, Vol.55 (3), p.735-738

1986

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Development of highly reliable ferroelectric random access memory and its Internet of Things applications

Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation

Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories

Development of a Pb(Zr,Ti)O 3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories

Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories

Ferroelectric capacitor with an asymmetric double-layer PLZT structure for FRAM

An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O3 capacitor

An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O 3 capacitor

Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions

Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO x underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor

Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor

Control of La-doped Pb(Zr,Ti)O3 crystalline orientation and its influence on the properties of ferroelectric random access memory

Control of La-doped Pb(Zr,Ti)O 3 crystalline orientation and its influence on the properties of ferroelectric random access memory

Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO^sub x^ underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor

Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOx bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor

Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x bottom electrode for the La-doped Pb(Zr,Ti)O 3 ferroelectric capacitor

Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO ^sub x^ bottom electrode for the La-doped Pb(Zr,Ti)O^sub 3^ ferroelectric capacitor

Control of La-doped Pb(Zr,Ti)O^sub 3^ crystalline orientation and its influence on the properties of ferroelectric random access memory

Direct deposition of SrBi2Ta2O9 Film on IrO2 electrode using liquid source CVD method

Development of Ferroelectric RAM (FRAM) for Mass Production

Novel pseudomorphic structure on Si substrate grown by metalorganic vapor phase epitaxy

Two Slowly Decaying Luminescence Bands in Alkali Iodides

A new electrode structure of IrOx/Bi-doped SrRuO3 for highly reliable La-doped Pb (Zr, Ti)O3-based ferroelectric memories

Realization of highly resistive GaAs/Si interface and improvement of RF performance for high electron-mobility transistors grown on Si substrates

Volume Change due to Self-Trapped Exciton and Frenkel Pair in KBr

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