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Formation of femtosecond laser-induced periodic nanostructures on GaN

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB01

2019

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Improved cemented carbide tool edge formed by solid phase chemical–mechanical polishing

Journal of materials research and technology, 2022-09, Vol.20, p.606-615

2022

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Periodicity control of laser-induced periodic nanostructures by thin deposition layer on sapphire substrate

Applied physics express, 2020-09, Vol.13 (9), p.96503

2020

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Structural modification of WC-Co cutting tools by laser doping treatment

Heliyon, 2023-09, Vol.9 (9), p.e19930-e19930, Article e19930

2023

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Crystallinity in periodic nanostructure surface on Si substrates induced by near- and mid-infrared femtosecond laser irradiation

Scientific reports, 2022-12, Vol.12 (1), p.1-8, Article 20955

2022

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Characterization of femtosecond-laser-induced periodic structures on SiC substrates

Japanese Journal of Applied Physics, 2018-02, Vol.57 (2), p.25602

2018

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Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Surface characterization of 6H-SiC substrate irradiated by femtosecond laser

Japanese Journal of Applied Physics, 2015-07, Vol.54 (7), p.71302

2015

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Femtosecond-Laser Irradiation onto Sapphire Substrates in an N2 Ambient Atmosphere

Physica status solidi. C, 2017-11, Vol.14 (11)

2017

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Focused ion beam as a tool for graphene technology: Structural study of processing sequence by electron microscopy

Japanese Journal of Applied Physics, 2014-02, Vol.53 (2S), p.2-1-02BC22-7

2014

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AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Journal of crystal growth, 2012-07, Vol.350 (1), p.69-71

2012

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Evaluation of chemical–mechanical polishing of processed WC-Co surface structure

Materials letters, 2023-11, Vol.351, p.135033, Article 135033

2023

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Surface thermal stability of free-standing GaN substrates

Japanese Journal of Applied Physics, 2016-01, Vol.55 (1S), p.1

2016

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A New Approach to Reform an Academic Facilities: Facilities and human resouces which let study vitality activate

The Journal of Science Policy and Research Management, 2020/05/01, Vol.35(1), pp.16-22

ERYU, Osamu

2020

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Significant enhancement of ferromagnetism in Zn1-xCrxTe doped with iodine as an n-type dopant

Physical review letters, 2006-07, Vol.97 (3), p.037201-037201

2006

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AlN Grown on $a$- and $n$-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JB31-08JB31-4

2013

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The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface

Materials science forum, 2012-05, Vol.717-720, p.569-572

2012

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Effects of laser pulse duration on the formation dynamics of laser-induced periodic nanostructures

Optics express, 2024-03, Vol.32 (7), p.11863-11872

2024

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Characteristics of PMN-PZT ferroelectric electron emitters with three-dimensional emission sites formed by chemical etching

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-05, Vol.29 (3)

2011

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Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing

Materials science forum, 2009-01, Vol.600-603, p.823-826

2009

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Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Transactions of the Materials Research Society of Japan, 2016/06/01, Vol.41(2), pp.155-157

2016

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Formation of periodic nanostructures induced by circularly-polarized femtosecond laser

Japanese Journal of Applied Physics, 2022-08, Vol.61 (SK), p.SK1003

2022

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Femtosecond‐Laser Irradiation onto Sapphire Substrates in an N2 Ambient Atmosphere

Physica status solidi. C, 2017-11, Vol.14 (11), p.n/a

2017

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Femtosecond‐Laser Irradiation onto Sapphire Substrates in an N 2 Ambient Atmosphere

Physica status solidi. C, 2017, Vol.14 (11)

2017

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Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs

Materials science forum, 2009-03, Vol.615-617, p.781-784

2009

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Formation of femtosecond laser-induced periodic nanostructures on GaN

Improved cemented carbide tool edge formed by solid phase chemical–mechanical polishing

Periodicity control of laser-induced periodic nanostructures by thin deposition layer on sapphire substrate

Structural modification of WC-Co cutting tools by laser doping treatment

Crystallinity in periodic nanostructure surface on Si substrates induced by near- and mid-infrared femtosecond laser irradiation

Characterization of femtosecond-laser-induced periodic structures on SiC substrates

Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy

Surface characterization of 6H-SiC substrate irradiated by femtosecond laser

Femtosecond-Laser Irradiation onto Sapphire Substrates in an N2 Ambient Atmosphere

Focused ion beam as a tool for graphene technology: Structural study of processing sequence by electron microscopy

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

Evaluation of chemical–mechanical polishing of processed WC-Co surface structure

Surface thermal stability of free-standing GaN substrates

A New Approach to Reform an Academic Facilities: Facilities and human resouces which let study vitality activate

Significant enhancement of ferromagnetism in Zn1-xCrxTe doped with iodine as an n-type dopant

AlN Grown on $a$- and $n$-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy

The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface

Effects of laser pulse duration on the formation dynamics of laser-induced periodic nanostructures

Characteristics of PMN-PZT ferroelectric electron emitters with three-dimensional emission sites formed by chemical etching

Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

Formation of periodic nanostructures induced by circularly-polarized femtosecond laser

Femtosecond‐Laser Irradiation onto Sapphire Substrates in an N2 Ambient Atmosphere

Femtosecond‐Laser Irradiation onto Sapphire Substrates in an N 2 Ambient Atmosphere

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs

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