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On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts

Applied surface science, 2000-10, Vol.166 (1-4), p.520-525

2000

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Photosensitivity and spectra of deep local states in sintered films of cadmium selenide and cadmium telluride alloys

Thin solid films, 1986-10, Vol.143 (3), p.225-235

1986

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Nature of deep luminescence centres in CdSe and CdSexTe1-x

Physica status solidi. B. Basic research, 1986-02, Vol.133 (2), p.611-620

1986

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Analytical, optical and electrophysical investigations of TiBx–GaAs interface

Surface science, 2001-06, Vol.482-485, p.928-934

2001

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The effect of composition on the properties and defect structure of the CdS-Ga2S3 solid solution

Semiconductors (Woodbury, N.Y.), 2002-07, Vol.36 (7), p.763-771

2002

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Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing

Semiconductors (Woodbury, N.Y.), 2009-08, Vol.43 (8), p.980-984

2009

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Modification of the defect structure in binary semiconductors under the action of microwave radiation

Technical physics, 2007-09, Vol.52 (9), p.1173-1177

2007

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Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide

Technical physics letters, 1999-10, Vol.25 (10), p.789-791

1999

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Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures

Technical physics, 1998-12, Vol.43 (12), p.1445-1449

1998

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The formation and thermal stability of multilayer ohmic contacts to n-GaAs with TiBx and Mo diffusion barriers

Technical physics, 2000-01, Vol.45 (11), p.1452-1456

2000

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Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide

Semiconductors (Woodbury, N.Y.), 1999-08, Vol.33 (8), p.865-869

1999

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Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n−n +-GaAs structures (M=Pt, Cr, W)

Semiconductors (Woodbury, N.Y.), 1997-04, Vol.31 (4), p.427-430

1997

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Mechanisms of the temperature quenching of luminescence due to deep centres in CdSexTe1-x (0<x<1) alloys

Thin solid films, 1987-02, Vol.146 (3), p.233-239

1987

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Effect of γ radiation from 60Co on the formation of metal contacts to GaAs (AlxGa1−x As) structures

Technical physics, 2004-03, Vol.49 (3), p.325-329

2004

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Studies on the Nature of CdS Single Crystal Sensitization by Etching

December 1, 1967, 2021, Vol.24, Number 2, p.543-550

2021

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Effect of lithium on the formation of sensitizing centres in CdSe films

Thin solid films, 1974-01, Vol.22 (2), p.157-164

1974

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On specific features of the defect formation mechanism in cadmium chalcogenides under thermal neutron irradiation

Physica status solidi. A, Applied research, 1981-05, Vol.65 (1), p.K13-K18

1981

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Electron-phonon interactions at radiative carrier capture on deep centers in cadmium sulfide single crystals

Journal of luminescence, 1975-01, Vol.10 (1), p.58-68

1975

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Photoluminescence (λm = 1.1 μm) in InSe Single Crystals and Its Relation to Photoconductivity

physica status solidi (b), 1969, Vol.35 (2), p.1065-1068

1969

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Effect of surface states on luminescent properties of CdS single crystals

Surface science, 1971, Vol.24 (1), p.229-238

1971

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Properties of Al, (AuGe)-GaAs contacts fabricated by combining ion-beam treatment and metallization

Technical physics, 1997-02, Vol.42 (2), p.232-233

1997

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Analytical, optical and electrophysical investigations of TiBx-GaAs interface

Surface science, 2001, Vol.482-85, p.928-934

2001

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On Photoconductivity of InSe Single Crystals

physica status solidi (b), 1969, Vol.31 (1), p.K59-K61

1969

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Nature of deep luminescence centres in CdSe and CdSe x Te 1– x

physica status solidi (b), 1986-02, Vol.133 (2), p.611-620

1986

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Studies on the Nature of CdS Single Crystal Sensitization by Etching

physica status solidi (b), 1967, Vol.24 (2), p.543-549

1967

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On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts

Photosensitivity and spectra of deep local states in sintered films of cadmium selenide and cadmium telluride alloys

Nature of deep luminescence centres in CdSe and CdSexTe1-x

Analytical, optical and electrophysical investigations of TiBx–GaAs interface

The effect of composition on the properties and defect structure of the CdS-Ga2S3 solid solution

Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing

Modification of the defect structure in binary semiconductors under the action of microwave radiation

Nature of the transitional region during the deposition of titanium boride and nitride films on gallium arsenide

Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures

The formation and thermal stability of multilayer ohmic contacts to n-GaAs with TiBx and Mo diffusion barriers

Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide

Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n−n +-GaAs structures (M=Pt, Cr, W)

Mechanisms of the temperature quenching of luminescence due to deep centres in CdSexTe1-x (0<x<1) alloys

Effect of γ radiation from 60Co on the formation of metal contacts to GaAs (AlxGa1−x As) structures

Studies on the Nature of CdS Single Crystal Sensitization by Etching

Effect of lithium on the formation of sensitizing centres in CdSe films

On specific features of the defect formation mechanism in cadmium chalcogenides under thermal neutron irradiation

Electron-phonon interactions at radiative carrier capture on deep centers in cadmium sulfide single crystals

Photoluminescence (λm = 1.1 μm) in InSe Single Crystals and Its Relation to Photoconductivity

Effect of surface states on luminescent properties of CdS single crystals

Properties of Al, (AuGe)-GaAs contacts fabricated by combining ion-beam treatment and metallization

Analytical, optical and electrophysical investigations of TiBx-GaAs interface

On Photoconductivity of InSe Single Crystals

Nature of deep luminescence centres in CdSe and CdSe x Te 1– x

Studies on the Nature of CdS Single Crystal Sensitization by Etching

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