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Distinct Detection of Thermally Induced Spin Voltage in Pt/WS2/Ni81Fe19 by the Inverse Spin Hall Effect

ACS applied materials & interfaces, 2019-12, Vol.11 (51), p.48533-48539

2019

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Negative Magnetoresistance in a Vertical Single-Layer Graphene Spin Valve at Room Temperature

ACS applied materials & interfaces, 2014-02, Vol.6 (4), p.2493-2496

2014

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High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

Scientific reports, 2015-06, Vol.5 (1), p.10699-10699, Article 10699

2015

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Control of Spin Precession in a Spin-Injected Field Effect Transistor

Science (American Association for the Advancement of Science), 2009-09, Vol.325 (5947), p.1515-1518

2009

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Comparison of frictional forces on graphene and graphite

Nanotechnology, 2009-08, Vol.20 (32), p.325701-325701

2009

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Ultimate limit in size and performance of WSe2 vertical diodes

Nature communications, 2018-12, Vol.9 (1), p.1-9, Article 5371

2018

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Raman fingerprint of doping due to metal adsorbates on graphene

Journal of physics. Condensed matter, 2012-08, Vol.24 (33), p.335301-335301

2012

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Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Scientific reports, 2020-06, Vol.10 (1), p.9374-9374, Article 9374

2020

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Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance

ACS applied materials & interfaces, 2015-10, Vol.7 (42), p.23589-23596

2015

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Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

Scientific reports, 2016-08, Vol.6 (1), p.30791-30791, Article 30791

2016

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Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors

Nanoscale, 2015-01, Vol.7 (2), p.747-757

2015

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Chemical doping of MoS2 multilayer by p-toluene sulfonic acid

Science and technology of advanced materials, 2015-06, Vol.16 (3), p.035009-035009

2015

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The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Scientific reports, 2022-07, Vol.12 (1), p.12085-12085, Article 12085

2022

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Low‐Power Negative‐Differential‐Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering

Advanced science, 2023-01, Vol.10 (1), p.e2204779-n/a

2023

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Ultraviolet-light-driven charge carriers tunability mechanism in graphene

Materials & design, 2018-12, Vol.159, p.232-239

2018

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Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions

Science and technology of advanced materials, 2016-01, Vol.17 (1), p.166-176

2016

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Spin valve effect of NiFe/graphene/NiFe junctions

Nano research, 2013-05, Vol.6 (5), p.373-379

2013

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Improving the electrical properties of graphene layers by chemical doping

Science and technology of advanced materials, 2014-10, Vol.15 (5), p.055004-8

2014

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Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor

Advanced science, 2023-06, Vol.10 (17), p.e2205383-n/a

2023

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The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder

Carbon (New York), 2013-08, Vol.59, p.366-371

2013

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Two-dimensional materials memory devices with floating metal gate for neuromorphic applications

Materials today advances, 2023-12, Vol.20, p.100438, Article 100438

2023

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Edge Oxidation Effect of Chemical-Vapor-Deposition-Grown Graphene Nanoconstriction

ACS applied materials & interfaces, 2014-03, Vol.6 (6), p.4207-4213

2014

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Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

Journal of applied physics, 2012-04, Vol.111 (8), p.084307-084307-5

2012

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Physical and electrical properties of graphene grown under different hydrogen flow in low pressure chemical vapor deposition

Nanoscale research letters, 2014-10, Vol.9 (1), p.546-546, Article 546

2014

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Distinct Detection of Thermally Induced Spin Voltage in Pt/WS2/Ni81Fe19 by the Inverse Spin Hall Effect

Negative Magnetoresistance in a Vertical Single-Layer Graphene Spin Valve at Room Temperature

High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

Control of Spin Precession in a Spin-Injected Field Effect Transistor

Comparison of frictional forces on graphene and graphite

Ultimate limit in size and performance of WSe2 vertical diodes

Raman fingerprint of doping due to metal adsorbates on graphene

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors

Chemical doping of MoS2 multilayer by p-toluene sulfonic acid

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

Low‐Power Negative‐Differential‐Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering

Ultraviolet-light-driven charge carriers tunability mechanism in graphene

Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements

Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions

Spin valve effect of NiFe/graphene/NiFe junctions

Improving the electrical properties of graphene layers by chemical doping

Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor

The structural and electrical evolution of chemical vapor deposition grown graphene by electron beam irradiation induced disorder

Two-dimensional materials memory devices with floating metal gate for neuromorphic applications

Edge Oxidation Effect of Chemical-Vapor-Deposition-Grown Graphene Nanoconstriction

Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

Physical and electrical properties of graphene grown under different hydrogen flow in low pressure chemical vapor deposition

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