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Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition

Thin solid films, 2021-10, Vol.736, p.138923, Article 138923

2021

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Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates

Journal of crystal growth, 2017-02, Vol.460, p.27-36

2017

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Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum

Journal of applied physics, 2013-09, Vol.114 (11)

2013

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Precise control of epitaxy of graphene by microfabricating SiC substrate

Applied physics letters, 2012-07, Vol.101 (4), p.41605

2012

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Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

Diamond and related materials, 2010-11, Vol.19 (11), p.1387-1392

2010

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Photoemission from the valence bands of Ce(1 1 1) on W(1 1 0)

Surface science, 2009-07, Vol.603 (13), p.2145-2151

2009

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Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition

Diamond and related materials, 2009-05, Vol.18 (5), p.831-834

2009

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Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission

Journal of physics. Conference series, 2010-06, Vol.235 (1), p.012008

2010

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Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Journal of materials chemistry, 2011-01, Vol.21 (43), p.17242-17248

2011

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Oxynitridation of Si(100) surface with thermally excited N2O gas

Thin solid films, 2006-04, Vol.500 (1-2), p.129-132

2006

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Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4×2) surface

Physical review letters, 1990-11, Vol.65 (21), p.2704-2707

1990

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Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy

Applied surface science, 1996-07, Vol.100, p.449-453

1996

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Transition from random to island growth mode during Si(100)-(2×1) dry oxidation and its description with autocatalytic reaction model

Applied surface science, 2000-08, Vol.162, p.293-298

2000

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Angle-resolved ultraviolet photoelectron spectroscopic study of Si(001)-(2×1)/K and Si(001)-(2×1)/Cs surfaces

Physical review. B, Condensed matter, 1989, Vol.39 (2), p.1125-1133

1989

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Angle-resolved photoemission studies of clean and adsorbed Si(001) surfaces: 2 × 1, c(4 × 2), 2 × 1-Na and 2 × 2-Ga

Surface science, 1991-02, Vol.242 (1), p.277-283

1991

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In situ observation of thermal and photon-induced reactions on Si surfaces by ultraviolet photoelectron spectroscopy

Journal of electron spectroscopy and related phenomena, 1998-03, Vol.88, p.747-755

1998

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Initial Oxidation of Si(100)- ( 2 × 1 ) as an Autocatalytic Reaction

Physical review letters, 1999-03, Vol.82 (11), p.2334-2337

1999

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Oxynitridation of Si(100) surface with thermally excited N 2O gas

Thin solid films, 2006, Vol.500 (1), p.129-132

2006

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In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy

Applied surface science, 1997-06, Vol.117, p.77-81

1997

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Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface

Surface science, 1994-06, Vol.313 (1), p.L797-L800

1994

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Surface and bulk core-level shifts of the Si(111)√3×√3-Ag surface: evidence for a charged √3×√3 layer

Physical review letters, 1987-04, Vol.58 (15), p.1555-1558

1987

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Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)

Journal of electron spectroscopy and related phenomena, 1996-05, Vol.80, p.173-176

1996

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Real-time observation of the dry oxidation of the Si (100) surface with ambient pressure x-ray photoelectron spectroscopy

Applied physics letters, 2007-09, Vol.92 (12110)

2007

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Periodicities and electronic structures of potassium-covered single-domain Si(001) surfaces below saturation coverage

Surface science, 1992-10, Vol.276 (1), p.205-212

1992

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Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering

Japanese Journal of Applied Physics, 2003-06, Vol.42 (Part 2, No. 6B), p.L676-L679

2003

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Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition

Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates

Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum

Precise control of epitaxy of graphene by microfabricating SiC substrate

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

Photoemission from the valence bands of Ce(1 1 1) on W(1 1 0)

Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition

Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Oxynitridation of Si(100) surface with thermally excited N2O gas

Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4×2) surface

Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopy

Transition from random to island growth mode during Si(100)-(2×1) dry oxidation and its description with autocatalytic reaction model

Angle-resolved ultraviolet photoelectron spectroscopic study of Si(001)-(2×1)/K and Si(001)-(2×1)/Cs surfaces

Angle-resolved photoemission studies of clean and adsorbed Si(001) surfaces: 2 × 1, c(4 × 2), 2 × 1-Na and 2 × 2-Ga

In situ observation of thermal and photon-induced reactions on Si surfaces by ultraviolet photoelectron spectroscopy

Initial Oxidation of Si(100)- ( 2 × 1 ) as an Autocatalytic Reaction

Oxynitridation of Si(100) surface with thermally excited N 2O gas

In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy

Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface

Surface and bulk core-level shifts of the Si(111)√3×√3-Ag surface: evidence for a charged √3×√3 layer

Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)

Real-time observation of the dry oxidation of the Si (100) surface with ambient pressure x-ray photoelectron spectroscopy

Periodicities and electronic structures of potassium-covered single-domain Si(001) surfaces below saturation coverage

Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering

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