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Plasma processing for advanced microelectronics beyond CMOS

Journal of applied physics, 2021-08, Vol.130 (8)

2021

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Electron beam generated plasmas: Characteristics and etching of silicon nitride

Microelectronic engineering, 2017-01, Vol.168, p.89-96

2017

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The effects of vacuum ultraviolet radiation on low- k dielectric films

Journal of applied physics, 2012-12, Vol.112 (11)

2012

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Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

2010 Symposium on VLSI Technology, 2010, p.21-22

2010

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Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

Volltextzugriff (PDF)

Gate-all-around silicon nanowire MOSFETs and circuits

68th Device Research Conference, 2010, p.269-272

2010

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Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

IEEE electron device letters, 2013-06, Vol.34 (6), p.723-725

2013

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Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.12-13

2011

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Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process

2017 Symposium on VLSI Technology, 2017, p.T120-T121

2017

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SiGe-on-insulator symmetric lateral bipolar transistors

2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015, p.1-2

2015

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Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

2013 IEEE International Electron Devices Meeting, 2013, p.20.2.1-20.2.4

2013

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Ge-on-insulator lateral bipolar transistors

2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016, p.130-133

2016

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Diamond Raman laser and Yb fiber amplifier for in vivo multiphoton fluorescence microscopy

Biomedical optics express, 2022-04, Vol.13 (4), p.1888-1898

2022

Volltextzugriff (PDF)

Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2010-11, Vol.28 (6), p.1316-1318

2010

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High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions

2013 Symposium on VLSI Technology, 2013, p.T18-T19

2013

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SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013, p.227-230

2013

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High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

Volltextzugriff (PDF)

High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions

2013 Symposium on VLSI Circuits, 2013, p.T18-T19

2013

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MAIT cell activation is reduced by direct and microbiota-mediated exposure to bisphenols

Environment international, 2022-01, Vol.158, p.106985-106985, Article 106985

2022

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Staphylococcal serine protease–like proteins are pacemakers of allergic airway reactions to Staphylococcus aureus

Journal of allergy and clinical immunology, 2017-02, Vol.139 (2), p.492-500.e8

2017

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Extreme levels of Canadian wildfire smoke in the stratosphere over central Europe on 21–22 August 2017

Atmospheric chemistry and physics, 2018-08, Vol.18 (16), p.11831-11845

2018

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Two-Dimensional Pattern Formation Using Graphoepitaxy of PS‑b‑PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

ACS nano, 2014-05, Vol.8 (5), p.5227-5232

2014

Volltextzugriff (PDF)

Smoke of extreme Australian bushfires observed in the stratosphere over Punta Arenas, Chile, in January 2020: optical thickness, lidar ratios, and depolarization ratios at 355 and 532 nm

Atmospheric chemistry and physics, 2020-07, Vol.20 (13), p.8003-8015

2020

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Indirect reciprocity and strategic reputation building in an experimental helping game

Games and economic behavior, 2009-11, Vol.67 (2), p.399-407

2009

Volltextzugriff (PDF)

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Plasma processing for advanced microelectronics beyond CMOS

Electron beam generated plasmas: Characteristics and etching of silicon nitride

The effects of vacuum ultraviolet radiation on low- k dielectric films

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films

Gate-all-around silicon nanowire MOSFETs and circuits

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process

SiGe-on-insulator symmetric lateral bipolar transistors

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

Ge-on-insulator lateral bipolar transistors

Diamond Raman laser and Yb fiber amplifier for in vivo multiphoton fluorescence microscopy

Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation

High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

High-performance Si1−xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions

MAIT cell activation is reduced by direct and microbiota-mediated exposure to bisphenols

Staphylococcal serine protease–like proteins are pacemakers of allergic airway reactions to Staphylococcus aureus

Extreme levels of Canadian wildfire smoke in the stratosphere over central Europe on 21–22 August 2017

Two-Dimensional Pattern Formation Using Graphoepitaxy of PS‑b‑PMMA Block Copolymers for Advanced FinFET Device and Circuit Fabrication

Smoke of extreme Australian bushfires observed in the stratosphere over Punta Arenas, Chile, in January 2020: optical thickness, lidar ratios, and depolarization ratios at 355 and 532 nm

Indirect reciprocity and strategic reputation building in an experimental helping game

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